Patents by Inventor Ying-Ya Hsu

Ying-Ya Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FinFET device and method
    Patent number: 11735651
    Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Shu Wu, Ying-Ya Hsu, Ching-Yu Pan, Hsiu-Hao Tsao, An Chyi Wei, Yuan-Hung Chiu
  • FINFET DEVICE AND METHOD
    Publication number: 20220359735
    Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 10, 2022
    Inventors: Chung-Shu Wu, Ying-Ya Hsu, Ching-Yu Pan, Hsiu-Hao Tsao, An Chyi Wei, Yuan-Hung Chiu
  • FinFET device and method
    Patent number: 11437498
    Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: September 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Shu Wu, Ying-Ya Hsu, Ching-Yu Pan, Hsiu-Hao Tsao, An Chyi Wei, Yuan-Hung Chiu
  • FINFET DEVICE AND METHOD
    Publication number: 20210111272
    Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 15, 2021
    Inventors: Chung-Shu Wu, Ying-Ya Hsu, Ching-Yu Pan, Hsiu-Hao Tsao, An Chyi Wei, Yuan-Hung Chiu
  • FinFET device and method
    Patent number: 10861960
    Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Shu Wu, Ying-Ya Hsu, Ching-Yu Pan, Hsiu-Hao Tsao, An Chyi Wei, Yuan-Hung Chiu
  • Method for forming fin field effect transistor (FinFET) device structure
    Patent number: 10276449
    Abstract: A method for forming a semiconductor device structure includes providing a substrate having a first fin structure and a second fin structure that are capped by a patterned hard mask structure. A liner layer and an overlying insulating layer are formed between the first and second fin structures. A multi-step etching process including a first step of selectively removing the patterned hard mask structure and a second step of in-situ and selectively removing a portion of the insulating layer to form an isolation feature is performed. The process gas used in the multi-step etching process includes a first etching gas and a second etching gas. The flow rate of the first etching gas is greater than that of the second etching gas in the first step and the flow rate of the first etching gas is less than that of the second etching gas in the second step.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: April 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Shu Wu, Ying-Ya Hsu, Shu-Uei Jang, Yu-Wen Wang, Ryan Chia-Jen Chen, An-Chyi Wei