Abstract: The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

Abstract: The present invention relates to a gas supply device for use in a crystal-growing furnace. The gas supply device has an insulation layer enclosing a crucible, a gas inlet mounted in the insulation layer, and a gas exit formed in the insulation layer. A gas flow guide shield with an adjustable angle is disposed at the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

Abstract: The present invention relates to a gas flow guiding device for use in a crystal-growing furnace. The gas flow guiding device has an insulation layer enclosing a crucible, a gas inlet mounted in the upper insulation layer, and a gas exit formed in the lateral insulation layer. A plurality of guide plates are radially arranged around the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.

Abstract: The present invention relates to a hot zone device for use in a crystal-growing furnace. The hot zone device has a gas inlet. The gas inlet is mounted in an insulation layer at a position above the crucible in a manner protruding into an interior of the crucible. The insulation layer is formed with a gas exit. The gas inlet is positioned such that the opening thereof is spaced apart from the free surface of the melt contained in the crucible by a distance substantially equal to or shorter than 10 cm, so as to allow the free surface of the melt to be blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality.