Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A three phase inverting device includes a three phase inverter module and a three phase filter module. The three phase inverter module includes a plurality of switches, each two switches are connected for forming a bridge arm, an input end of each of the bridge arm are coupled for forming a DC end, the DC end is connected to a DC load. The three phase filter module is connected to the three phase inverter module, wherein the three phase filter module includes a plurality of inductances and a plurality of capacitances, the inductances are connected at one side of the capacitances, a portion of the capacitances are connected to a output end of each of the bridge arm of the three phase inverter module, a portion of the inductances are connected to an AC end.

Abstract: A three-phase inverting apparatus and a control method and a paralleled power conversion system thereof are provided. The control method is suitable for controlling a three-phase inverter having a plurality of switch sets, a first inductor, a second inductor, and a third inductor. The control method includes following steps: obtaining a DC bus voltage, a plurality of phase voltages, and a plurality of phase currents; obtaining inductances of the first, the second, and the third inductors; calculating a plurality of switch duty ratios by a division-summation control means according to the DC bus voltage, the phase voltages, current variations of the phase currents, the inductances, and a switching cycle based on a sinusoidal pulse width modulation (SPWM); and generating corresponding control signals based on the switch duty ratios so as to control a switching of the switch sets.

Abstract: A three-phase inverting apparatus and a control method and a paralleled power conversion system thereof are provided. The control method is suitable for controlling a three-phase inverter having a plurality of switch sets, a first inductor, a second inductor, and a third inductor. The control method includes following steps: obtaining a DC bus voltage, a plurality of phase voltages, and a plurality of phase currents; obtaining inductances of the first, the second, and the third inductors; calculating a plurality of switch duty ratios by a division-summation control means according to the DC bus voltage, the phase voltages, current variations of the phase currents, the inductances, and a switching cycle based on a sinusoidal pulse width modulation (SPWM); and generating corresponding control signals based on the switch duty ratios so as to control a switching of the switch sets.