Patents by Inventor YING YONG

YING YONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11515154
    Abstract: Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: November 29, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Andrea Leoncini, Yong Wang, Doreen Wei Ying Yong
  • Publication number: 20220356197
    Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: April 21, 2021
    Publication date: November 10, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Chandan Kr Barik, John Sudijono, Chandan Das, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
  • Patent number: 11459347
    Abstract: Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Grant
    Filed: January 12, 2021
    Date of Patent: October 4, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
  • Publication number: 20220306662
    Abstract: Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: June 16, 2022
    Publication date: September 29, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
  • Patent number: 11434254
    Abstract: Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Grant
    Filed: January 12, 2021
    Date of Patent: September 6, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
  • Publication number: 20220275012
    Abstract: Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: May 18, 2022
    Publication date: September 1, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
  • Patent number: 11390638
    Abstract: Molybdenum(VI) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Grant
    Filed: January 12, 2021
    Date of Patent: July 19, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
  • Publication number: 20220220140
    Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: January 12, 2021
    Publication date: July 14, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
  • Publication number: 20220220137
    Abstract: Molybdenum(VI) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: January 12, 2021
    Publication date: July 14, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan, Feng Q. Liu
  • Publication number: 20220220607
    Abstract: Molybdenum(0) coordination complexes comprising at least one cycloheptatriene ligand and optionally one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: January 12, 2021
    Publication date: July 14, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
  • Publication number: 20220220136
    Abstract: Dinuclear molybdenum coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a dinuclear molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: January 12, 2021
    Publication date: July 14, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
  • Publication number: 20220220138
    Abstract: Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: January 12, 2021
    Publication date: July 14, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong
  • Publication number: 20220220139
    Abstract: Molybdenum(0) coordination complexes comprising ligands which each coordinate to the metal center by nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: January 12, 2021
    Publication date: July 14, 2022
    Inventors: Andrea Leoncini, Paul Mehlmann, Nemanja Dordevic, Han Vinh Huynh, Doreen Wei Ying Yong, Mark Saly, Bhaskar Jyoti Bhuyan
  • Publication number: 20220130664
    Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.
    Type: Application
    Filed: October 27, 2020
    Publication date: April 28, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Yong Wang, Andrea Leoncini, Doreen Wei Ying Yong, Bhaskar Jyoti Bhuyan, John Sudijono
  • Publication number: 20220130659
    Abstract: Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.
    Type: Application
    Filed: October 27, 2020
    Publication date: April 28, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Yong Wang, Andrea Leoncini, Doreen Wei Ying Yong, John Sudijono
  • Publication number: 20220127717
    Abstract: Selective deposition methods are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a head group and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.
    Type: Application
    Filed: October 27, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Yong Wang, Doreen Wei Ying Yong, Bhaskar Jyoti Bhuyan, John Sudijono
  • Publication number: 20220130660
    Abstract: Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.
    Type: Application
    Filed: October 27, 2020
    Publication date: April 28, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Andrea Leoncini, Yong Wang, Doreen Wei Ying Yong
  • Publication number: 20210111033
    Abstract: Exemplary methods of etching a silicon-containing material may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The fluorine-containing precursor may be characterized by a molecular formula of XFy, and y may be greater than or equal to 5. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include laterally etching the layers of silicon nitride.
    Type: Application
    Filed: October 10, 2019
    Publication date: April 15, 2021
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Mikhail Korolik, Paul E. Gee, Bhaskar Jyoti Bhuyan, John Sudijono, Doreen Wei Ying Yong, Kah Wee Ang, Debanjan Jana, Niharendu Mahapatra
  • Publication number: 20210050478
    Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package. In other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.
    Type: Application
    Filed: August 13, 2019
    Publication date: February 18, 2021
    Inventors: Ying-Yong SU, Hsin-Mao LIU, Wei-Shan HU, Ching-Tai CHENG
  • Patent number: 10886433
    Abstract: A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: January 5, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Ta-Cheng Hsu, Ching-Shian Yeh, Chao-Shun Huang, Ying-Yong Su, Ya-Lan Yang, Ya-Ju Lee