Abstract: An OPC modeling method is disclosed, which includes: step S1: determining optical model parameters and resist model parameters; step S2: obtaining a plurality of parameter combinations by stochastically choosing values for the parameters; step S3: performing photolithography simulations and etching wafers and calculating RMS values of differences between simulated CDs and etching CDs and BCE values of the CDs; step S4: evaluating the values according to Pareto principle and calculating Pareto optimum to N-th-best Pareto suboptimum sets to prioritize the plurality of parameter combinations in a descending order; step S5: applying a genetic algorithm with position-based crossover and/or mutation to the plurality of parameter combinations, to obtain new parameter combinations; and step S6: iterating steps S3 to S5 on the new parameter combinations until a number of iterations reaches a first predetermined value and using highest prioritized ones of parameter combinations resulting from a last iteration for OPC m

Abstract: A method for correcting mask patterns includes providing a target layout, including a plurality of main patterns; dividing the target layout into a plurality of first regions along a first direction; acquiring position information of each first region of the plurality of first regions; acquiring a first model of each first region according to the position information of the first region; acquiring pattern parameters of auxiliary patterns around each main pattern of the first region; and arranging, around each main pattern, the auxiliary patterns of the main pattern according to the pattern parameters of the auxiliary patterns.

Abstract: A method for correcting mask patterns includes providing a target layout, including a plurality of main patterns; dividing the target layout into a plurality of first regions along a first direction; acquiring position information of each first region of the plurality of first regions; acquiring a first model of each first region according to the position information of the first region; acquiring pattern parameters of auxiliary patterns around each main pattern of the first region; and arranging, around each main pattern, the auxiliary patterns of the main pattern according to the pattern parameters of the auxiliary patterns.