Patents by Inventor Ying-Hao Wu

Ying-Hao Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11626292
    Abstract: In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.
    Type: Grant
    Filed: March 8, 2021
    Date of Patent: April 11, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chang Lee, Jiann-Horng Lin, Chih-Hao Chen, Ying-Hao Wu, Wen-Yen Chen, Shih-Hua Tseng, Shu-Huei Suen
  • Patent number: 11183392
    Abstract: According to an embodiment of the present disclosure, a method of manufacturing semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer and exposing upper portion of the line-end cut pattern; reducing a width of the line-end cut pattern; etching the spacer layer to expose the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the reduced line-end cut pattern as an etch mask.
    Type: Grant
    Filed: April 28, 2020
    Date of Patent: November 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jiann-Horng Lin, Chao-Kuei Yeh, Ying-Hao Wu, Tai-Yen Peng, Chih-Hao Chen, Chih-Sheng Tian
  • Publication number: 20210193480
    Abstract: In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.
    Type: Application
    Filed: March 8, 2021
    Publication date: June 24, 2021
    Inventors: Yi-Chang LEE, Jiann-Horng LIN, Chih-Hao CHEN, Ying-Hao WU, Wen-Yen CHEN, Shih-Hua TSENG, Shu-Huei SUEN
  • Patent number: 10943791
    Abstract: In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: March 9, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Chang Lee, Jiann-Horng Lin, Chih-Hao Chen, Ying-Hao Wu, Wen-Yen Chen, Shih-Hua Tseng, Shu-Huei Suen
  • Publication number: 20200258754
    Abstract: According to an embodiment of the present disclosure, a method of manufacturing semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer and exposing upper portion of the line-end cut pattern; reducing a width of the line-end cut pattern; etching the spacer layer to expose the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the reduced line-end cut pattern as an etch mask.
    Type: Application
    Filed: April 28, 2020
    Publication date: August 13, 2020
    Inventors: JIANN-HORNG LIN, CHAO-KUEI YEH, YING-HAO WU, TAI-YEN PENG, CHIH-HAO CHEN, CHIH-SHENG TIAN
  • Publication number: 20200135487
    Abstract: In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.
    Type: Application
    Filed: May 31, 2019
    Publication date: April 30, 2020
    Inventors: Yi-Chang LEE, Jiann-Horng LIN, Chih-Hao CHEN, Ying-Hao WU, Wen-Yen CHEN, Shih-Hua TSENG, Shu-Huei SUEN
  • Patent number: 10636667
    Abstract: A method of manufacturing a semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer on the line-end cut pattern; reducing a width of the line-end cut pattern; etching first horizontal portions of the spacer layer with the reduced line-end cut pattern as an etching mask; removing the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the etched line-end cut pattern as an etch mask.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: April 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jiann-Horng Lin, Chao-Kuei Yeh, Ying-Hao Wu, Tai-Yen Peng, Chih-Hao Chen, Chih-Sheng Tian
  • Patent number: 10340141
    Abstract: An embodiment method includes defining a first mandrel and a second mandrel over a hard mask layer. The method also includes depositing a spacer layer over and along sidewalls of the first mandrel and the second mandrel, and forming a sacrificial material over the spacer layer between the first mandrel and the second mandrel. The sacrificial material includes an inorganic oxide. The method further includes removing first horizontal portions of the spacer layer to expose the first mandrel and the second mandrel. Remaining portions of the spacer layer provide spacers on sidewalls of the first mandrel and the second mandrel. The method further includes removing the first mandrel and the second mandrel and patterning the hard mask layer using the spacers and the sacrificial material as an etch mask.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: July 2, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tai-Yen Peng, Chao-Kuei Yeh, Ying-Hao Wu, Chih-Hao Chen
  • Publication number: 20190157094
    Abstract: A method of manufacturing a semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer on the line-end cut pattern; reducing a width of the line-end cut pattern; etching first horizontal portions of the spacer layer with the reduced line-end cut pattern as an etching mask; removing the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the etched line-end cut pattern as an etch mask.
    Type: Application
    Filed: September 4, 2018
    Publication date: May 23, 2019
    Inventors: JIANN-HORNG LIN, CHAO-KUEI YEH, YING-HAO WU, TAI-YEN PENG, CHIH-HAO CHEN, CHIH-SHENG TIAN
  • Publication number: 20190131131
    Abstract: A method of forming a semiconductor device structure is provided. The method includes successively forming first and second hard mask layers over a trench pattern region of a material layer. The second hard mask layer has a first tapered opening corresponding to a portion of the trench pattern region and a passivation spacer is formed on a sidewall of the first tapered opening to form a second tapered opening therein. The method also includes forming a third tapered opening below the second tapered opening and removing a portion of the passivation spacer in a first etching process. The method also includes forming a vertical opening in the first hard mask layer below the bottom of the third tapered opening in a second etching process. The vertical opening has a width that is substantially equal to a bottom width of the third tapered opening.
    Type: Application
    Filed: October 30, 2017
    Publication date: May 2, 2019
    Inventors: Ying-Hao WU, Chao-Kuei YEH, Tai-Yen PENG, Yun-Yu CHEN, Jiann-Horng LIN, Chih-Hao CHEN
  • Patent number: 10276378
    Abstract: A method of forming a semiconductor device structure is provided. The method includes successively forming first and second hard mask layers over a trench pattern region of a material layer. The second hard mask layer has a first tapered opening corresponding to a portion of the trench pattern region and a passivation spacer is formed on a sidewall of the first tapered opening to form a second tapered opening therein. The method also includes forming a third tapered opening below the second tapered opening and removing a portion of the passivation spacer in a first etching process. The method also includes forming a vertical opening in the first hard mask layer below the bottom of the third tapered opening in a second etching process. The vertical opening has a width that is substantially equal to a bottom width of the third tapered opening.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: April 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ying-Hao Wu, Chao-Kuei Yeh, Tai-Yen Peng, Yun-Yu Chen, Jiann-Horng Lin, Chih-Hao Chen
  • Publication number: 20180315601
    Abstract: An embodiment method includes defining a first mandrel and a second mandrel over a hard mask layer. The method also includes depositing a spacer layer over and along sidewalls of the first mandrel and the second mandrel, and forming a sacrificial material over the spacer layer between the first mandrel and the second mandrel. The sacrificial material includes an inorganic oxide. The method further includes removing first horizontal portions of the spacer layer to expose the first mandrel and the second mandrel. Remaining portions of the spacer layer provide spacers on sidewalls of the first mandrel and the second mandrel. The method further includes removing the first mandrel and the second mandrel and patterning the hard mask layer using the spacers and the sacrificial material as an etch mask.
    Type: Application
    Filed: July 3, 2017
    Publication date: November 1, 2018
    Inventors: Tai-Yen Peng, Chao-Kuei Yeh, Ying-Hao Wu, Chih-Hao Chen
  • Publication number: 20160102112
    Abstract: Dinitrosyl iron complexes are disclosed, which are represented by the following formula (I): [(R1R2N(CH2)nNR3(CH2)mNR4R5)Fe(NO)2]z??(I) wherein the definitions of R1, R2, R3, R4, R5, n, m and z are the same as those defined in the specification. In addition, the present invention further provides a use of the aforementioned dinitrosyl iron complexes, and a water splitting device using the same.
    Type: Application
    Filed: August 6, 2015
    Publication date: April 14, 2016
    Inventors: Wen-Feng LIAW, Tzung-Wen CHIOU, Ying-Hao WU
  • Patent number: 5492512
    Abstract: A brake system for an automobile comprises a planetary gear set, a clutch operating unit and an emergency braking unit. The planetary gear set is disposed between gear and clutch assemblies of the automobile and includes a bell-shaped casing with a central neck connected securely to an input shaft of the gear assembly. The bell-shaped casing has an annular wall portion with an internal thread therein, a sun gear disposed centrally in the casing and fixed to a clutch shaft of the clutch assembly which passes axially and centrally therethrough, and a planet gear which meshes with the internal thread of the casing and the sun gear. The planet gear has a planet shaft connected rotatably to a clutch shell of the clutch assembly.
    Type: Grant
    Filed: October 24, 1994
    Date of Patent: February 20, 1996
    Assignee: Chung-Da Wu
    Inventor: Ying-Hao Wu
  • Patent number: 4726600
    Abstract: A dual system bicycle for hand and foot propelling operations including a handle device with a front link mechanism operatively installed on top of a front fork member fixed on a front wheel of a bicycle, and a lever device with a rear link mechanism movably connected between the front link and a pedal system installed in a lower portion of a frame structure and in the rear wheel through a chain wheel arrangement of the bicycle; thereby, the rider can use both hands and feet for propelling the bicycle, improving his bodily fitness and increasing the moving speed of the bicycle. Alternatively, the dual system bicycle can be easily changed into an ordinary bicycle mode for foot propulsion only.
    Type: Grant
    Filed: July 29, 1986
    Date of Patent: February 23, 1988
    Inventor: Ying-Hao Wu