Abstract: An IC package structure including an array of package units formed into a panel-shaped package units array. Each package unit has a continuous and closed metal wall surrounding the periphery of the package unit and at least one IC chip/IC die disposed in the package unit, and wherein each IC chip/IC die has a top surface and a back surface opposite to the top surface. A panel-shaped metal layer corresponding to the panel-shaped package units array can be formed on entire back side of the IC package structure and bonded to the metal wall of each package unit, wherein the back side of the IC package structure refers to the side to which the back surface of each IC chip/IC die is facing.

Abstract: A panel-shaped metal wall grids array for panel level IC packaging and associated manufacturing method. Each metal wall grid in the metal wall grids array has a continuous and closed metal wall of a predetermined wall height. The metal wall grids are connected to form a monolithic panel through a plurality of metal connecting portions. When the panel-shaped metal wall grids array is used for panel level IC packaging, at least one IC chip/IC die is disposed in each metal wall grid with a top surface of each IC chip/IC die facing downwards, and a panel-shaped metal layer matching with the panel-shaped wall grids array may be further formed on the entire back side of the panel-shaped metal wall grids array so that the panel-shaped metal layer is bonded to the metal wall of each metal wall grid.

Abstract: An IC package structure and an IC package unit are disclosed. The IC package includes an array of metal wall grids formed into a panel, each one of the metal wall grids having a continuous and closed metal wall to surround an IC package unit with at least one IC chip/IC die disposed therein. Each IC chip/IC die has a top surface with a plurality of metal pads formed thereon. A panel-shaped metal layer is formed on entire back side of the panel of the array of metal wall grids and bonded to the metal wall of each metal wall grid. A panel-shaped rewiring substrate having a plurality of metal pillars is connected to each IC chip/IC die with each one of the plurality of metal pillars soldered with a corresponding one of the plurality of metal pads.

Abstract: A flip chip package unit and associated packaging method. The flip chip package unit may include an integrated circuit (“IC”) die having a plurality of metal pillars formed on its first surface and attached to a rewiring substrate with the first surface of the IC die facing to the rewiring substrate, an under-fill material filling gaps between the first surface of the IC die and the rewiring substrate, and a back protective film attached to a second surface of the IC die. The back protective film may have good UV sensitivity to change from non-solid to solid after UV irradiation while maintaining its viscosity with the IC die not reduced after UV irradiation. The back protective film may be uneasy to deform and to peel off from the IC die and can provide physical protection and effective heat dissipation path to the IC die.

Abstract: A flip chip package unit and associated packaging method. The flip chip package unit may include an integrated circuit (“IC”) die having a plurality of metal pillars formed on its first surface and attached to a rewiring substrate with the first surface of the IC die facing to the rewiring substrate, an under-fill material filling gaps between the first surface of the IC die and the rewiring substrate, and a thermal conductive protection film covering or overlaying and directly contacting with the entire second die surface and a first portion of sidewalls of the IC die. The thermal conductive protection film may have good thermal conductivity, uneasy to fall off from the IC die and can provide physical protection, electromagnetic interference protection and effective heat dissipation path to the IC die.

Abstract: An IC package structure and associated packaging method. The IC package structure may include an array of package units formed into a panel, wherein each one of the array of package units comprises at least one IC chip/IC die. Each IC chip/IC die may be at least partially covered and wrapped by an encapsulation layer having one or more openings to expose entire or at least a portion of a back surface of each IC chip/IC die. A metal layer may be electroplated on entire back side of the IC package structure to fill the openings in the encapsulation layer so that the metal layer is in direct contact with the exposed portions of the back surface of each IC chip/IC die.

Abstract: A multi-die co-packed module with an embedded die embedded in a substrate, an electrical component mounted above the substrate, and a flip chip die placed between the substrate and the electrical component or below the substrate. The package is compact and low cost.

Abstract: A multi-die package structure with an embedded die embedded in a substrate, a flip chip die mounted above the substrate, and an attached die attached onto the flip chip die. The package is compact and low cost.

Abstract: A multi-die package structure with an embedded die embedded in a substrate, a high flip chip die mounted above the substrate, and a low flip chip die placed below the substrate. The package is compact and low cost.

Abstract: An IC package structure including an array of package units formed into a panel-shaped package units array. Each package unit has a continuous and closed metal wall surrounding the periphery of the package unit and at least one IC chip/IC die disposed in the package unit, and wherein each IC chip/IC die has a top surface and a back surface opposite to the top surface. A panel-shaped metal layer corresponding to the panel-shaped package units array can be formed on entire back side of the IC package structure and bonded to the metal wall of each package unit, wherein the back side of the IC package structure refers to the side to which the back surface of each IC chip/IC die is facing.

Abstract: An IC package structure and an IC package unit are disclosed. The IC package includes an array of metal wall grids formed into a panel, each one of the metal wall grids having a continuous and closed metal wall to surround an IC package unit with at least one IC chip/IC die disposed therein. Each IC chip/IC die has a top surface with a plurality of metal pads formed thereon. A panel-shaped metal layer is formed on entire back side of the panel of the array of metal wall grids and bonded to the metal wall of each metal wall grid. A panel-shaped rewiring substrate having a plurality of metal pillars is connected to each IC chip/IC die with each one of the plurality of metal pillars soldered with a corresponding one of the plurality of metal pads.

Abstract: A panel-shaped metal wall grids array for panel level IC packaging and associated manufacturing method. Each metal wall grid in the metal wall grids array has a continuous and closed metal wall of a predetermined wall height. The metal wall grids are connected to form a monolithic panel through a plurality of metal connecting portions.