Abstract: A method of manufacturing an LED device comprises the steps of: forming a second LED structure over a first LED structure, in which at least one of the first or second LED structures is positioned over a porous region of III-nitride material. An LED device comprises a second LED structure positioned over a first LED structure, in which at least one of the first or second LED structures is positioned over a porous region of III-nitride material. An array of LEDs and a three-colour LED device are also provided.

Abstract: A method of manufacturing an LED device comprises the steps of: providing a template comprising a first porous region of III-nitride material; forming a first LED structure on the template above the first porous region; and forming a second LED structure on the template, in which the second LED structure is not positioned above the first porous region. An LED device comprises a first LED structure, over a first porous region of III-nitride material; and a second LED structure which is not positioned over the first porous region. A three colour LED device is also provided.

Abstract: An LED device comprises a plurality of light-emitting diodes (LEDs), and an optical filter arranged to filter light emitted by the plurality of LEDs. The optical filter comprises a first region arranged to filter light emitted from a first portion of the plurality of LEDs, in which the first region of the optical filter comprises a Distributed Bragg Reflector (DBR) configured to prevent transmission of light of a predetermined wavelength ?1. The LED device may comprise a colour-conversion material positioned between the first portion of the LEDs and the DBR, the colour-conversion material being configured to emit light at one or more wavelengths different from the emission wavelength ?1 of the first portion of LEDs. An optical filter and a method of manufacture are also provided.

Abstract: An automatic production apparatus for high-thermal-conductivity flocking pad includes a conveyor belt system, a cutting assembly, an electrostatic flocking assembly, a perfusion device and a thermosetting device, wherein the electrostatic flocking assembly is connected to a power supply which is configured for outputting a step-wave voltage through a bottom screen mesh thereof. The polymer matrix is conveyed through the conveyor belt system, and is stretched, flocked in the step-wave electric field, shrunk, poured and dried to form a flocking pad product with high-thermal-conductivity. In this invention, the polymer matrix is stretched and shrunk to make the flocking be dense by regulating and controlling the speed of the conveyor belt system, a step-wave electric field is provided during the flocking process, and meanwhile, the flocking, pouring and curing time is regulated and controlled.

Abstract: A method of manufacturing an LED device comprises the steps of: forming an n-doped connecting layer of III-nitride material over a porous region of III-nitride material; forming a first electrically-insulating mask layer on the n-doped connecting layer; removing a portion of the first mask layer to expose a first exposed region of the n-doped connecting layer; forming a first LED structure, which is configured to emit light at a first emission wavelength, on the first exposed region of the n-doped connecting layer; forming a second electrically-insulating mask layer over the first LED structure and the n-doped connecting layer; removing a portion of the second mask layer to expose a second exposed region of the n-doped connecting layer; and forming a second LED structure, which is configured to emit light at a second emission wavelength different from the first emission wavelength, on the second exposed region of the n-doped connecting layer.

Abstract: A light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and the p-doped portion. The light emitting region comprises: a light-emitting layer which emits light at a peak wavelength between 400 and 599 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting layer; and a III-nitride barrier layer located on the III-nitride layer. The light emitting diode comprises a porous region of III-nitride material. An LED array and a method of manufacturing an LED with a peak emission wavelength between 400 nm and 599 nm under electrical bias are also provided.

Abstract: A super-flexible high thermal conductive graphene film and a preparation method thereof are provided. The graphene film is obtained from ultra large homogeneous graphene sheets through processes of solution film-forming, chemical reduction, high temperature reduction, high pressure suppression and so on. The graphene film has a density in a range of 1.93 to 2.11 g/cm3, is formed by overlapping planar oriented graphene sheets with an average size of more than 100 ?m with each other through ?-? conjugate action, and comprises 1 to 4 layers of graphene sheets which have few defects. The graphene film can be repeatedly bent for 1200 times or more, with elongation at break of 12-18%, electric conductivity of 8000-10600 S/cm, thermal conductivity of 1800-2600 W/mK, and can be used as a highly flexible thermal conductive device.

Abstract: A wafer holder for holding a semiconductor wafer during electrochemical porosification with an electrolyte comprises a housing for receiving the semiconductor wafer, an aperture in the housing, through which an upper surface of the semiconductor wafer is exposable to the electrolyte, a seal extending around the aperture, for preventing the ingress of electrolyte into the housing; and an electrical contact for making an electrical connection with the semiconductor wafer. A method of electrochemical porosification of a semiconductor wafer comprises the steps of placing a semiconductor wafer in a wafer holder; immersing the housing in an electrolyte, so that the surface of the semiconductor wafer is exposed to electrolyte through the aperture; and applying a potential difference between the semiconductor wafer and the electrolyte.

Abstract: A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5×1017 cm?3, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1×1014 cm?3 and 1×1017 cm?3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm?3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material, beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5 × 1017 cm-3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Abstract: A method for porosifying a III-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first III-nitride material, having a charge carrier density greater than 5×1017 cm?3, beneath a surface layer of a second III-nitride material, having a charge carrier density of between 1×1014 cm?3 and 1×1017 cm?3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

Abstract: A red-light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region comprises: a light-emitting indium gallium nitride layer which emits light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting indium gallium nitride layer; and a III-nitride barrier layer located on the III-nitride layer, and the light emitting diode comprises a porous region of III-nitride material. A red mini LED, a red micro-LED, an array of micro-LEDs, and a method of manufacturing a red LED are also provided.

Abstract: A method of manufacturing a micro-LED comprises the steps of forming an n-doped connecting layer of III-nitride material over a porous region of III-nitride material, and forming an electrically-insulating mask layer on the n-doped connecting layer. The method comprises the steps of removing a portion of the mask to expose an exposed region of the n-doped connecting layer, and forming an LED structure on the exposed region of the n-doped connecting layer. A method of manufacturing an array of micro-LEDs comprises the step of removing a portion of the mask to expose an array of exposed regions of the n-doped connecting layer, and forming an LED structure on each exposed region of the n-doped connecting layer. A micro-LED and array of micro-LEDs are also provided.

Abstract: A weakly coupled enhanced graphene film includes an enhanced graphene structure based on weak coupling, wherein the enhanced graphene structure based on weak coupling comprises a plurality of graphene units stacked vertically; the graphene unit is a single graphene sheet, or consists of two or more graphene sheets stacked in AB form; two vertically adjacent graphene units are weakly coupled, to promote the hot electron transition and increase the joint density of states, thereby increasing the number of hot electrons in high-energy states; the stacking direction of the graphene units in the graphene structure is in the thickness direction of the graphene film; and the graphene film enhances the accumulation of hot electrons in high-energy states by the enhanced graphene structure based on weak coupling.

Abstract: A plug, an electrical connector and a terminal device are provided. The plug is used for connecting to the terminal device related to a vehicle battery. One end of the plug can adapt to an output port of the terminal device, and the other end of the plug can be connected to the vehicle battery through wires, so that the terminal device can detect or perform charging and discharging operations on the vehicle battery. The plug includes an insulating housing, a first terminal arranged in the insulating housing, and at least a pair of second terminals arranged in the insulating housing. Each pair of second terminals being distributed in central symmetry with the first terminal as the center, and the polarity of the first terminal is the opposite of the polarity of the second terminals.

Abstract: The invention relates to the field of tire pressure detection technologies, and discloses a tire pressure sensor including: a valve assembly including a mounting portion and an elastic telescopic structure mounted to the mounting portion, the elastic telescopic structure elastically extending and retracting on at least one side of the mounting portion; a sensor assembly having two opposite clamping surfaces, at least one of the two clamping surfaces being provided with a locking hole, the mounting portion being located between two of the clamping surfaces, and the elastic telescopic structure being inserted into the locking hole. After the elastic telescopic structure is shortened, the mounting portion of the valve assembly may be inserted between the two clamping surfaces.

Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material,beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Abstract: The invention relates to the field of tire pressure detection technologies, and discloses a tire pressure sensor including: a valve assembly including a mounting portion and an elastic telescopic structure mounted to the mounting portion, the elastic telescopic structure elastically extending and retracting on at least one side of the mounting portion; a sensor assembly having two opposite clamping surfaces, at least one of the two clamping surfaces being provided with a locking hole, the mounting portion being located between two of the clamping surfaces, and the elastic telescopic structure being inserted into the locking hole. After the elastic telescopic structure is shortened, the mounting portion of the valve assembly may be inserted between the two clamping surfaces.

Abstract: A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5×1017 cm?3, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1×1014 cm?3 and 1×1017 cm?3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.