Abstract: A method of controlling bow in a layered semiconductor structure comprises the steps of: providing a layered semiconductor structure comprising a first layer of III-nitride semiconductor material on a substrate, the layered semiconductor structure having a first bow, and forming a porous region of III-nitride semiconductor material over the first layer of III-nitride semiconductor material, in which the layered semiconductor structure comprising the porous region has a second bow different from the first bow. A semiconductor structure having controllable bow comprises a first layer of III-nitride semiconductor material on a substrate, and a porous region of III-nitride semiconductor material over the first layer of III-nitride semiconductor material. The layered semiconductor structure comprising the porous region has a second bow, and the second bow is tunable by tuning a porosity and/or thickness of the porous region.

Abstract: A method for porosifying a III-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first III-nitride material, having a charge carrier density greater than 5×1017 cm?3, beneath a surface layer of a second III-nitride material, having a charge carrier density of between 1×1014 cm?3 and 1×1017 cm?3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

Abstract: The present disclosure provides a pixel arrangement structure, a metal mask, a display panel and a display device, and the pixel arrangement structure includes a first sub-pixel located at a first vertex of a first virtual polygon; a second sub-pixel located at a second vertex of the first virtual polygon, the first vertex and the second vertex being arranged alternately and spaced apart; and a third sub-pixel located inside the first virtual polygon, wherein two first sub-pixels are arranged at each first vertex, and a line connecting centers of third sub-pixels in two adjacent first virtual polygons is parallel to a row direction or a column direction. The present disclosure not only solves the jagged display problem of the OLED display device, but also is beneficial to improving the pixel density of the OLED display device.

Abstract: A red-light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region comprises: a light-emitting indium gallium nitride layer which emits light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting indium gallium nitride layer; and a III-nitride barrier layer located on the III-nitride layer, and the light emitting diode comprises a porous region of III-nitride material. A red mini LED, a red micro-LED, an array of micro-LEDs, and a method of manufacturing a red LED are also provided.

Abstract: A light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and the p-doped portion. The light emitting region comprises: a light-emitting layer which emits light at a peak wavelength between 400 and 599 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting layer; and a III-nitride barrier layer located on the III-nitride layer. The light emitting diode comprises a porous region of III-nitride material. An LED array and a method of manufacturing an LED with a peak emission wavelength between 400 nm and 599 nm under electrical bias are also provided.

Abstract: Provided are a pixel arrangement structure, a metal mask, a display panel and a display apparatus, the structure includes: a plurality of first and second pixel units, the first pixel unit includes one first sub-pixel, one second sub-pixel and one third sub-pixel; the second pixel unit includes one first sub-pixel, one second sub-pixel and two third sub-pixels; an aperture area of the third sub-pixel in the first pixel unit is greater than that of each third sub-pixel in the second pixel unit, a first spacing exists between two third sub-pixels in the second pixel unit, a second spacing exists between the first and second sub-pixels in the second pixel unit, the first spacing is greater than the second spacing; the third sub-pixel located in the first pixel unit and two adjacent third sub-pixels belonging to different second pixel units correspond to a same aperture region of a metal mask.

Abstract: An aerogel fiber having specific cross-sectional morphological feature, graphene fiber and a preparation method and device therefor are provided. The arrangement of the cross-sectional two-dimensional nanosheets of the aerogel fiber can be regulated. The regulation method includes: adding a rotating flow field device during wet spinning before the spinning fluid is sprayed out, the rotating flow field causes the two-dimensional nanosheets to form a specific sheet-like arrangement in the cross-sectional direction of the gel fiber under the action of rotating shear, and preparing a graphene oxide aerogel fiber with specific morphological structure (concentric or spiral) from the gel fiber having specific cross-sectional morphological structure under freeze-drying conditions. Further, drying and densifying, stretching and reducing the hydrogel fiber with the concentric circle structure are performed to obtain a graphene fiber with high modulus and high thermal conductivity.

Abstract: A weakly coupled enhanced graphene film includes an enhanced graphene structure based on weak coupling, wherein the enhanced graphene structure based on weak coupling comprises a plurality of graphene units stacked vertically; the graphene unit is a single graphene sheet, or consists of two or more graphene sheets stacked in AB form; two vertically adjacent graphene units are weakly coupled, to promote the hot electron transition and increase the joint density of states, thereby increasing the number of hot electrons in high-energy states; the stacking direction of the graphene units in the graphene structure is in the thickness direction of the graphene film; and the graphene film enhances the accumulation of hot electrons in high-energy states by the enhanced graphene structure based on weak coupling.

Abstract: A method for etching a semiconductor structure is provided, the semiconductor structure includes a sub-surface quantum structure of a first III-V semiconductor material, beneath a surface layer of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm?3. The sub-surface quantum structure may include, for example, a quantum well, or a quantum wire, or a quantum dot. The method includes the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure to form a plurality of nanostructures, while the surface layer is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Abstract: A method for etching a semiconductor structure (110) is provided, the semiconductor structure comprising a sub-surface quantum structure (30) of a first III-V semiconductor material, beneath a surface layer (31) of a second III-V semiconductor material having a charge carrier density of less than 5×1017 cm?3. The sub-surface quantum structure may comprise, for example, a quantum well, or a quantum wire, or a quantum dot. The method comprises the steps of exposing the surface layer to an electrolyte (130), and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure (30) to form a plurality of nanostructures, while the surface layer (31) is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

Abstract: A plug, an electrical connector and a terminal device are provided. The plug is used for connecting to the terminal device related to a vehicle battery. One end of the plug can adapt to an output port of the terminal device, and the other end of the plug can be connected to the vehicle battery through wires, so that the terminal device can detect or perform charging and discharging operations on the vehicle battery. The plug includes an insulating housing, a first terminal arranged in the insulating housing, and at least a pair of second terminals arranged in the insulating housing. Each pair of second terminals being distributed in central symmetry with the first terminal as the center, and the polarity of the first terminal is the opposite of the polarity of the second terminals.

Abstract: A method for preparing nanomaterial macroscopic composites through substrate heating and solvent evaporation is provided, and the method includes setting a substrate, and preparing a reaction precursor solution required for the synthesis of nanomaterials; evenly dropping a small volume of the precursor solution on/in the substrate; performing a heating method to make the substrate generate a heat and transferring the heat to the precursor solution on/in the substrate; after a period of time, terminating the heating of the substrate to finish the synthesis, removing and cleaning the substrate, thus obtaining corresponding nanomaterial macroscopic composites.

Abstract: A preparation method for a large crystal region high crystallinity carbonaceous fiber, where a wet spinning method is mainly used to assemble graphene oxide and other polymer materials in liquid phase, a two-dimensional graphene oxide sheet performs a “template orienting effect” on polymer molecules, making the directional crystallization of polymer molecules, resulting in fiber with high orientation and crystallinity. Graphene sheet catalyzes pyrolyzed molecules through a “graphitization inducing effect” to directionally generate graphene-like carbon layers after following high temperature treatment, thereby promoting stacking behavior of graphene sheets, and a composite carbonaceous fiber with an optimal crystallinity is prepared. The graphene fiber material prepared by the present method has characteristics of low cost, high crystallinity and high performance, and can be applied to a field of lightweight structural materials.

Abstract: A method for forming porous Ill-nitride material comprises the steps of exposing a Ill-nitride material to a gas, coupling the Ill-nitride material to one terminal of a power supply, and coupling an electrode to another terminal of the power supply, and via the gas forming a circuit. The method comprises the step of energising the circuit to etch a plurality of pores in the Ill-nitride material and thereby form a porous Ill-nitride material. Pores are preferably formed in Ill-nitride material having a charge carrier density of greater than 1×1017 cm3. A semiconductor structure, a template for semiconductor overgrowth, and a semiconductor device comprising porous Ill-nitride material formed by the method are also provided.

Abstract: A method of controlling bow in a layered semiconductor structure comprises the steps of: providing a layered semiconductor structure comprising a first layer of III-nitride semiconductor material on a substrate, the layered semiconductor structure having a first bow, and forming a porous region of III-nitride semiconductor material over the first layer of III-nitride semiconductor material, in which the layered semiconductor structure comprising the porous region has a second bow different from the first bow. A semiconductor structure having controllable bow comprises a first layer of III-nitride semiconductor material on a substrate, and a porous region of III-nitride semiconductor material over the first layer of III-nitride semiconductor material. The layered semiconductor structure comprising the porous region has a second bow, and the second bow is tunable by tuning a porosity and/or thickness of the porous region.

Abstract: A method of manufacturing an LED device comprises the steps of: forming a second LED structure over a first LED structure, in which at least one of the first or second LED structures is positioned over a porous region of III-nitride material. An LED device comprises a second LED structure positioned over a first LED structure, in which at least one of the first or second LED structures is positioned over a porous region of III-nitride material. An array of LEDs and a three-colour LED device are also provided.

Abstract: A method of manufacturing an LED device comprises the steps of: providing a template comprising a first porous region of III-nitride material; forming a first LED structure on the template above the first porous region; and forming a second LED structure on the template, in which the second LED structure is not positioned above the first porous region. An LED device comprises a first LED structure, over a first porous region of III-nitride material; and a second LED structure which is not positioned over the first porous region. A three colour LED device is also provided.

Abstract: An LED device comprises a plurality of light-emitting diodes (LEDs), and an optical filter arranged to filter light emitted by the plurality of LEDs. The optical filter comprises a first region arranged to filter light emitted from a first portion of the plurality of LEDs, in which the first region of the optical filter comprises a Distributed Bragg Reflector (DBR) configured to prevent transmission of light of a predetermined wavelength ?1. The LED device may comprise a colour-conversion material positioned between the first portion of the LEDs and the DBR, the colour-conversion material being configured to emit light at one or more wavelengths different from the emission wavelength ?1 of the first portion of LEDs. An optical filter and a method of manufacture are also provided.

Abstract: An automatic production apparatus for high-thermal-conductivity flocking pad includes a conveyor belt system, a cutting assembly, an electrostatic flocking assembly, a perfusion device and a thermosetting device, wherein the electrostatic flocking assembly is connected to a power supply which is configured for outputting a step-wave voltage through a bottom screen mesh thereof. The polymer matrix is conveyed through the conveyor belt system, and is stretched, flocked in the step-wave electric field, shrunk, poured and dried to form a flocking pad product with high-thermal-conductivity. In this invention, the polymer matrix is stretched and shrunk to make the flocking be dense by regulating and controlling the speed of the conveyor belt system, a step-wave electric field is provided during the flocking process, and meanwhile, the flocking, pouring and curing time is regulated and controlled.

Abstract: A light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and the p-doped portion. The light emitting region comprises: a light-emitting layer which emits light at a peak wavelength between 400 and 599 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting layer; and a III-nitride barrier layer located on the III-nitride layer. The light emitting diode comprises a porous region of III-nitride material. An LED array and a method of manufacturing an LED with a peak emission wavelength between 400 nm and 599 nm under electrical bias are also provided.