Patents by Inventor Yingli Rao

Yingli Rao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-conformal high selectivity film for etch critical dimension control
    Patent number: 11702751
    Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: July 18, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Bo Qi, Huiyuan Wang, Yingli Rao, Abhijit Basu Mallick
  • Methods of etching metal oxides with less etch residue
    Patent number: 11232955
    Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: January 25, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
  • Metal and metal-derived films
    Patent number: 10998195
    Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: May 4, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Susmit Singha Roy, Yingli Rao, Srinivas Gandikota
  • Non-Conformal High Selectivity Film For Etch Critical Dimension Control
    Publication number: 20210047733
    Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.
    Type: Application
    Filed: August 10, 2020
    Publication date: February 18, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bo Qi, Huiyuan Wang, Yingli Rao, Abhijit Basu Mallick
  • Methods Of Etching Metal Oxides With Less Etch Residue
    Publication number: 20200227275
    Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
    Type: Application
    Filed: March 26, 2020
    Publication date: July 16, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
  • Methods of etching metal oxides with less etch residue
    Patent number: 10622221
    Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: April 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
  • METAL AND METAL-DERIVED FILMS
    Publication number: 20200083056
    Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.
    Type: Application
    Filed: November 13, 2019
    Publication date: March 12, 2020
    Inventors: Susmit Singha ROY, Yingli RAO, Srinivas GANDIKOTA
  • Metal and metal-derived films
    Patent number: 10510547
    Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: December 17, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Susmit Singha Roy, Yingli Rao, Srinivas Gandikota
  • Methods Of Etching Metal Oxides With Less Etch Residue
    Publication number: 20190189456
    Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
    Type: Application
    Filed: December 13, 2018
    Publication date: June 20, 2019
    Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
  • METAL AND METAL-DERIVED FILMS
    Publication number: 20190080915
    Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.
    Type: Application
    Filed: September 4, 2018
    Publication date: March 14, 2019
    Inventors: Susmit Singha ROY, Yingli RAO, Srinivas GANDIKOTA
  • Boron compounds and uses thereof
    Patent number: 8697872
    Abstract: Organoboron compounds are described that upon exposure to light absorb light and isomerize and form a dark-colored isomer. The dark-colored isomer converts back to the colorless isomer upon removal of light, or exposure to oxygen or heat. Such compounds can be added into polymeric matrices such as films. These compounds are suitable for UV-blocking, UV-detecting, and for oxygen-sensing applications. Uses include UV-blocking windows, sunglasses, and as indicators in packaging such as food packaging.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: April 15, 2014
    Assignee: Queen's University at Kingston
    Inventors: Suning Wang, Hazem Y. S. Amarne, Yingli Rao
  • Boron Compounds and Uses Thereof
    Publication number: 20120253044
    Abstract: Organoboron compounds are described that upon exposure to light absorb light and isomerize and form a dark-colored isomer. The dark-colored isomer converts back to the colorless isomer upon removal of light, or exposure to oxygen or heat. Such compounds can be added into polymeric matrices such as films. These compounds are suitable for UV-blocking, UV-detecting, and for oxygen-sensing applications. Uses include UV-blocking windows, sunglasses, and as indicators in packaging such as food packaging.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 4, 2012
    Inventors: Suning Wang, Hazem Y.S. Amarne, Yingli Rao