Abstract: A process and a device for continuous flow side-chain alkylation which relate to the technical field of organic synthesis. In this process and the device for continuous flow side-chain alkylation, an ibuprofen raw material is prepared with alkylbenzene as a raw material. This raw material alkylbenzene is easily available and has a low cost, and is suitable for scale-up production. Moreover, an entire preparation process adopts continuous chemical synthesis, and a reaction time of each stage can be precisely controlled, which is beneficial to control a total reaction time and reduce an amount of impurities produced. In this way, a purity and a yield of the ibuprofen raw material are improved. In summary, a continuous synthesis method for side-chain alkylation of alkylbenzene provided by the present disclosure shows a low cost and a high yield.

Abstract: The present application provides a preparation method for iridium nanocrystal, including the following steps: mixing an iridium salt, an alcohol solvent and a centrifugal waste liquid to form a mixed solution, and adding an alkali solution in an inert atmosphere for a heating reaction. After centrifugation, an iridium nanocrystal is obtained. The centrifugal waste liquid is a waste liquid produced in the pre-synthesis process of iridium nanocrystal. The preparation method can shorten the reaction time, and the obtained iridium nanocrystal has the advantages of high yield and low cost.

Abstract: Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

Abstract: A charged particle assessment apparatus comprising: a charged particle beam device; an actuated sample stage; a hot component and a thermal compensator. The actuated sample stage is configured to hold a sample. The hot component is configured to operate such that, during operation, heat is radiated toward a sample held on the sample holder. The hot component is smaller than the sample. The thermal compensator is configured to heat the sample so as to reduce thermal gradients therein.

Abstract: Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

Abstract: Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

Abstract: Systems and methods to manipulate stacks of silicon wafers and rings are described. In one aspect, a robotic actuator includes a robotic end effector that further a first surface having multiple attached wafer suction cups arranged to collectively grasp a silicon wafer. The robotic end effector also includes a second surface that further includes multiple attached ring suction cups arranged to collectively grasp a ring. The second surface also includes a bulk grabber positionable to grasp a collective stack of rings. The robotic actuator also includes an axial actuator configured to rotate the robotic end effector about a flip axis, such that either the first surface or the second surface faces vertically upwards.

Abstract: Systems and methods to manipulate stacks of silicon wafers and rings are described. In one aspect, a robotic actuator includes a robotic end effector that further a first surface having multiple attached wafer suction cups arranged to collectively grasp a silicon wafer. The robotic end effector also includes a second surface that further includes multiple attached ring suction cups arranged to collectively grasp a ring. The second surface also includes a bulk grabber positionable to grasp a collective stack of rings. The robotic actuator also includes an axial actuator configured to rotate the robotic end effector about a flip axis, such that either the first surface or the second surface faces vertically upwards.