Abstract: The present application relates to the technical field of biomembranes and, in particular, to a method for extracting an exosome. The method for extracting an exosome includes the following steps: step 1. adding a whole blood sample onto a microfluidic centrifuge disk; step 2. separating the whole blood to obtain plasma; step 3. filtering the plasma with a microfiltration membrane; step 4. mixing the filtered plasma with a loading solution to obtain a mixed solution; step 5. filtering the mixed solution with a surface-modified membrane to trap the exosome on the surface-modified membrane; and step 6. eluting the exosome from the surface-modified membrane to obtain a target exosome.

Abstract: A method for testing a lifetime of a surface state carrier of a semiconductor, including the following steps, 1) a narrow pulse light source is used to emit a light pulse, and coupled to an interior of a near-field optical probe, and the near-field optical probe produces a photon-generated carrier on a surface of a semiconductor material under test through excitation. 2) The excited photon-generated carrier is concentrated on the surface of the semiconductor material, and recombination is conducted continuously with a surface state as a recombination center. 3) A change in a lattice constant is produced due to an electronic volume effect, a stress wave is produced, and a signal of the stress wave is detected in a high-frequency broadband ultrasonic testing mode. 4) Fitting calculation is conducted on the signal of the stress wave to obtain the lifetime of the surface state carrier ?c.

Abstract: A method for testing a lifetime of a surface state carrier of a semiconductor, including the following steps, 1) a narrow pulse light source is used to emit a light pulse, and coupled to an interior of a near-field optical probe, and the near-field optical probe produces a photon-generated carrier on a surface of a semiconductor material under test through excitation. 2) The excited photon-generated carrier is concentrated on the surface of the semiconductor material, and recombination is conducted continuously with a surface state as a recombination center. 3) A change in a lattice constant is produced due to an electronic volume effect, a stress wave is produced, and a signal of the stress wave is detected in a high-frequency broadband ultrasonic testing mode. 4) Fitting calculation is conducted on the signal of the stress wave to obtain the lifetime of the surface state carrier ?c.