Patents by Inventor Yingping Zheng

Yingping Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8207037
    Abstract: A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A semiconductor material includes an epitaxial layer disposed on a semiconductor substrate. A trench having an upper portion and a lower portion is formed in the epitaxial layer. A portion of a field plate is formed in the lower portion of the trench, wherein the field plate is electrically isolated from trench sidewalls. A gate structure is formed in the upper portion of the trench, wherein a gate oxide is formed from opposing sidewalls of the trench. Gate electrodes are formed adjacent to the gate oxide formed from the opposing sidewalls and a dielectric material is formed adjacent to the gate electrode. Another portion of the field plate is formed in the upper portion of the trench and cooperates with the portion of the field plate formed in the lower portion of the trench to form the field plate.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: June 26, 2012
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Hui Wang, Gennadiy Nemtsev, Yingping Zheng, Gordon M. Grivna
  • Publication number: 20090108342
    Abstract: A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A semiconductor material includes an epitaxial layer disposed on a semiconductor substrate. A trench having an upper portion and a lower portion is formed in the epitaxial layer. A portion of a field plate is formed in the lower portion of the trench, wherein the field plate is electrically isolated from trench sidewalls. A gate structure is formed in the upper portion of the trench, wherein a gate oxide is formed from opposing sidewalls of the trench. Gate electrodes are formed adjacent to the gate oxide formed from the opposing sidewalls and a dielectric material is formed adjacent to the gate electrode. Another portion of the field plate is formed in the upper portion of the trench and cooperates with the portion of the field plate formed in the lower portion of the trench to form the field plate.
    Type: Application
    Filed: October 31, 2007
    Publication date: April 30, 2009
    Inventors: Hui Wang, Gennadiy Nemtsev, Yingping Zheng, Gordon M. Grivna
  • Publication number: 20090108343
    Abstract: A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A semiconductor material includes an epitaxial layer disposed on a semiconductor substrate. Field plate trenches extend into the semiconductor material and field plates are formed in the field plate trenches. A gate trench is formed between two adjacent field plate trenches and another gate trench is formed adjacent one of the field plate trenches. Gate structures are formed in the gate trenches, wherein each gate structure includes a gate oxide and a gate conductor. A conductor electrically couples the field plates together.
    Type: Application
    Filed: October 31, 2007
    Publication date: April 30, 2009
    Inventors: Gennadiy Nemtsev, Hui Wang, Yingping Zheng, Gordon M. Grivna
  • Patent number: 7365383
    Abstract: An EPROM cell includes a control gate and a control transistor. A portion of the control transistor is formed as a portion of the control gate.
    Type: Grant
    Filed: March 27, 2006
    Date of Patent: April 29, 2008
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Gennadiy Nemtsev, Yingping Zheng, Rajesh S. Nair
  • Publication number: 20060177982
    Abstract: An EPROM cell includes a control gate and a control transistor. A portion of the control transistor is formed as a portion of the control gate.
    Type: Application
    Filed: March 27, 2006
    Publication date: August 10, 2006
    Inventors: Gennadiy Nemtsev, Yingping Zheng, Rajesh Nair
  • Patent number: 7052959
    Abstract: An EPROM cell includes a control gate and a control transistor. A portion of the control transistor is formed as a portion of the control gate.
    Type: Grant
    Filed: January 8, 2004
    Date of Patent: May 30, 2006
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Gennadiy Nemtsev, Yingping Zheng, Rajesh S. Nair
  • Publication number: 20050153512
    Abstract: An EPROM cell includes a control gate and a control transistor. A portion of the control transistor is formed as a portion of the control gate.
    Type: Application
    Filed: January 8, 2004
    Publication date: July 14, 2005
    Inventors: Gennadiy Nemtsev, Yingping Zheng, Rajesh Nair
  • Patent number: 6897561
    Abstract: A transistor (10) is formed as a matrix of transistor cells (13) that have drain metal strips (50) for contacting drains (15) of the transistor cells and source metal strips (55) for contacting sources (35) of the transistor cells. An interconnect layer (1030) overlying the matrix of transistor cells has first portions (201) that contact one the drain metal strips with first and second vias (79) and second portions (101) that contact one of the source metal strips with third and fourth vias (78).
    Type: Grant
    Filed: June 6, 2003
    Date of Patent: May 24, 2005
    Assignee: Semiconductor Components Industries, LLC
    Inventors: Gennadiy Nemtsev, Hui Wang, Yingping Zheng, Rajesh Nair
  • Publication number: 20040245638
    Abstract: A transistor (10) is formed as a matrix of transistor cells (13) that have drain metal strips (50) for contacting drains (15) of the transistor cells and source metal strips (55) for contacting sources (35) of the transistor cells. An interconnect layer (1030) overlying the matrix of transistor cells has first portions (201) that contact one the drain metal strips with first and second vias (79) and second portions (101) that contact one of the source metal strips with third and fourth vias (78).
    Type: Application
    Filed: June 6, 2003
    Publication date: December 9, 2004
    Applicant: Semiconductor Components Industries, LLC.
    Inventors: Gennadiy Nemtsev, Hui Wang, Yingping Zheng, Rajesh Nair