Patents by Inventor Yingqian Chen

Yingqian Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LIQUID VINYL FUNCTIONALIZED CAGE-TYPE POLYHEDRAL OLIGOMERIC SILSESQUIOXANE MODIFIED BY LOW-MOLECULAR-WEIGHT POLYSILOXANE AND PREPARATION METHOD THEREOF
    Publication number: 20240150527
    Abstract: Disclosed are liquid vinyl functionalized cage-type polyhedral oligomeric silsesquioxane modified by low-molecular-weight polysiloxane and a preparation method thereof. Under the catalytic action of tris(pentafluorophenyl)borane, cage-type octakis (dimethylsiloxy)-T8-silsesquioxane and hetero telechelic polydimethylsiloxane undergo a Piers-Rubinsztajn reaction, to obtain liquid Vi-POSS. Side chains of the liquid vinyl functionalized POSS in the present disclosure are Si—O—Si chain links, have better heat stability than that of common long-carbon-chain side chains, and contain vinyl functional groups capable of participating in chemical reactions, which not only have good mechanical enhancement and heat resistance properties, but also have chemical reactivity.
    Type: Application
    Filed: October 19, 2023
    Publication date: May 9, 2024
    Inventors: Lianbin WU, Hui LI, Yingqian HU, Zaoxia WEN, Wenxiu CHEN
  • CHALCOGEN PRECURSORS FOR DEPOSITION OF SILICON NITRIDE
    Publication number: 20230253201
    Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).
    Type: Application
    Filed: April 14, 2023
    Publication date: August 10, 2023
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Chandan Kr Barik, Michael Haverty, Muthukumar Kaliappan, Cong Trinh, Bhaskar Jyoti Bhuyan, John Sudijono, Anil Kumar Tummanapelli, Richard Ming Wah Wong, Yingqian Chen
  • Chalcogen precursors for deposition of silicon nitride
    Patent number: 11658025
    Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).
    Type: Grant
    Filed: January 18, 2021
    Date of Patent: May 23, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Chandan Kr Barik, Michael Haverty, Muthukumar Kaliappan, Cong Trinh, Bhaskar Jyoti Bhuyan, John Sudijono, Anil Kumar Tummanapelli, Richard Ming Wah Wong, Yingqian Chen
  • NOVEL OXIDANTS AND STRAINED-RING PRECURSORS
    Publication number: 20220406595
    Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.
    Type: Application
    Filed: June 22, 2021
    Publication date: December 22, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Chandan Kr Barik, Doreen Wei Ying Yong, John Sudijono, Cong Trinh, Bhaskar Jyoti Bhuyan, Michael Haverty, Muthukumar Kaliappan, Yingqian Chen, Anil Kumar Tummanapelli, Richard Ming Wah Wong
  • CHALCOGEN PRECURSORS FOR DEPOSITION OF SILICON NITRIDE
    Publication number: 20220230874
    Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).
    Type: Application
    Filed: January 18, 2021
    Publication date: July 21, 2022
    Applicants: Applied Materials, Inc., National University of Singapore
    Inventors: Chandan Kr Barik, Michael Haverty, Muthukumar Kaliappan, Cong Trinh, Bhaskar Jyoti Bhuyan, John Sudijono, Anil Kumar Tummanapelli, Richard Ming Wah Wong, Yingqian Chen