Abstract: A semiconductor detector and a packaging method thereof. The semiconductor detector includes: a cathode circuit board including a read out chip, a high voltage side top layer of the cathode circuit board, a bottom connection layer of the cathode circuit board and a dielectric filled between the high voltage side top layer and the bottom connection layer, wherein the high voltage side top layer is connected to the bottom connection layer through a via hole; and a detector crystal including a crystal body, an anode and a cathode, the anode is connected to the read out chip of the cathode circuit board, the high voltage side top layer is connected to an input terminal of the semiconductor detector and the bottom connection layer directly contacts the cathode of the detector crystal to connect the cathode to the cathode circuit board.

Abstract: The present disclosure provides an apparatus for processing signals for a plurality of energy regions, and a system and method for detecting radiation of a plurality of energy regions. The apparatus for processing signals for a plurality of energy regions may comprise: a first processor, configured to receive a signal from a detector and process the received signal to generate a gated signal, wherein a turn-on period of the gated signal represents magnitude of the received signal; and a second processor, configured to receive the gated signal from the first processor, and determine one of the plurality of energy regions to which the received signal belongs according to the turn-on period of the gated signal, so as to count signals within the determined energy region.

Abstract: There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

Abstract: A semiconductor may include a semiconductor detection material including a first side and a second side opposite to each other, a cathode disposed on the first side, and an anode disposed on the second side. The anode includes an array of pixel anodes defining detection pixels of the semiconductor detector, and intermediate anodes disposed between adjacent ones of the pixel anodes. According to an embodiment of the present disclosure, it is possible to achieve signal correction to improve the energy resolution and the signal-to-noise ratio of the detector.

Abstract: The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body, an anode and a cathode; a field enhance electrode for applying a voltage to the detector crystal; an insulating material disposed between the field enhanced electrode and a surface of the detector crystal. The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.

Abstract: The present invention relates to the field of radiation detection, and provides a CdZnTe aerial inspection system and an inspection method. The inspection system comprises a CdZnTe spectrometer (10) and an aircraft (20). The aircraft (20) flies and carries the CdZnTe spectrometer (10) to realize a function of aerial inspection, thereby improving operating efficiency of nuclear radiation monitoring. The CdZnTe spectrometer (10) has high energy resolution, a small volume, a light weight, and desirable portability. By combining the CdZnTe spectrometer (10) and the aircraft (20), the present invention enables high measurement precision, a long operation duration, and an aerial access to a site of a nuclear accident to perform operations and inspect the site, thus reducing radiation exposure received by a person entering the site, and providing support for rescue operation.

Abstract: The present disclosure provides an apparatus for processing signals for a plurality of energy regions, and a system and method for detecting radiation of a plurality of energy regions. The apparatus for processing signals for a plurality of energy regions may comprise: a first processor, configured to receive a signal from a detector and process the received signal to generate a gated signal, wherein a turn-on period of the gated signal represents magnitude of the received signal; and a second processor, configured to receive the gated signal from the first processor, and determine one of the plurality of energy regions to which the received signal belongs according to the turn-on period of the gated signal, so as to count signals within the determined energy region.

Abstract: There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

Abstract: A semiconductor may include a semiconductor detection material including a first side and a second side opposite to each other, a cathode disposed on the first side, and an anode disposed on the second side. The anode includes an array of pixel anodes defining detection pixels of the semiconductor detector, and intermediate anodes disposed between adjacent ones of the pixel anodes. According to an embodiment of the present disclosure, it is possible to achieve signal correction to improve the energy resolution and the signal-to-noise ratio of the detector.

Abstract: The disclosure provides a detector, and a detecting system and method for dividing energy regions intelligently.

Abstract: A semiconductor detector and a packaging method thereof. The semiconductor detector includes: a cathode circuit board including a read out chip, a high voltage side top layer of the cathode circuit board, a bottom connection layer of the cathode circuit board and a dielectric filled between the high voltage side top layer and the bottom connection layer, wherein the high voltage side top layer is connected to the bottom connection layer through a via hole; and a detector crystal including a crystal body, an anode and a cathode, the anode is connected to the read out chip of the cathode circuit board, the high voltage side top layer is connected to an input terminal of the semiconductor detector and the bottom connection layer directly contacts the cathode of the detector crystal to connect the cathode to the cathode circuit board.

Abstract: The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body, an anode and a cathode; a field enhance electrode for applying a voltage to the detector crystal; an insulating material disposed between the field enhanced electrode and a surface of the detector crystal. The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.

Abstract: The present invention provides a method and apparatus for processing signals of a semiconductor detector, including: acquiring a relationship of a time difference between anode and cathode signals of the semiconductor detector with an anode signal amplitude; obtaining an optimal data screening interval according to the relationship of the time difference between anode and cathode signals of the semiconductor detector with the anode signal amplitude, wherein the optimal data screening interval is an interval where the time difference between the anode and cathode signals is greater than 50 ns; and screening and processing the collected data according to the optimal data screening interval when the semiconductor detector collects data. The present invention better overcomes the inherent crystal defects of the detector, reduces the effect of background noise, increases the energy resolution of the cadmium zinc telluride detector under room temperature, and improves the peak-to-compton ratio.

Abstract: The present invention provides a method and apparatus for processing signals of a semiconductor detector, including: acquiring a relationship of a time difference between anode and cathode signals of the semiconductor detector with an anode signal amplitude; obtaining an optimal data screening interval according to the relationship of the time difference between anode and cathode signals of the semiconductor detector with the anode signal amplitude, wherein the optimal data screening interval is an interval where the time difference between the anode and cathode signals is greater than 50 ns; and screening and processing the collected data according to the optimal data screening interval when the semiconductor detector collects data. The present invention better overcomes the inherent crystal defects of the detector, reduces the effect of background noise, increases the energy resolution of the cadmium zinc telluride detector under room temperature, and improves the peak-to-compton ratio.