Patents by Inventor Yingsong Wang
Yingsong Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240348206Abstract: A method for diagnosing an internal loss mechanism of a solar cell is provided. The solar cell includes an anode and a cathode. An electron transport layer, an active layer and a hole transport layer are arranged in sequence from top to bottom between the cathode and the anode. The solar cell is modeled through a solar cell multi-physics simulation platform. Current density-voltage (JV) curves respectively of type A, type B, type C and type D are simulated by regulating a bulk defect and a surface defect of the active layer and a voltage scan rate. The solar cell is subjected to forward voltage scan and reverse voltage scan to obtain forward and reverse JV curves. According to the forward and reverse JV curves, whether the JV curve type of the solar cell is the type A, the type B, the type C or the type D is determined.Type: ApplicationFiled: June 7, 2024Publication date: October 17, 2024Inventors: Xingang REN, Shengyang WEI, Zhaosheng XIA, Zhixiang HUANG, Wei SHA, Lihua WANG, Gang WANG, Bo WU, Yingsong LI, Zhiliang CHEN, Yong PENG
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Patent number: 12095135Abstract: An ultra-wideband electromagnetic band gap (EBG) structure includes multiple EBG units in an array. Each EBG unit includes a power plane, a dielectric substrate and a ground plane from top to bottom. The power plane includes a patch, a coupled complementary split ring resonator (C-CSRR) and a plurality of semi-improved Z-bridge structures. Each edge of the patch is provided with a semi-improved Z-bridge structure. The C-CSRR is provided within a ring formed by the semi-improved Z-bridge structures. The Z-bridge structure includes a first horizontal branch, a first vertical branch, a second horizontal branch and a second vertical branch connected in sequence. The second vertical branch is connected to the patch. First horizontal branches of adjacent EBG units are connected to each other. A circuit board including the aforementioned EBG structure is also provided.Type: GrantFiled: December 13, 2023Date of Patent: September 17, 2024Assignee: Anhui UniversityInventors: Xingang Ren, Shengyang Wei, Yali Zhao, Guoxing Sun, Jiayu Rao, Gang Wang, Kaikun Niu, Xianliang Wu, Zhixiang Huang, Yingsong Li, Yong Peng
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Patent number: 12057502Abstract: A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO2; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.Type: GrantFiled: March 27, 2024Date of Patent: August 6, 2024Assignee: Anhui UniversityInventors: Xingang Ren, Wei Zhi, Huping Ju, Zhixiang Huang, Gang Wang, Kaikun Niu, Siliang Wang, Yingsong Li, Xianliang Wu, Sungen Cao
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Publication number: 20240243201Abstract: A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO2; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.Type: ApplicationFiled: March 27, 2024Publication date: July 18, 2024Inventors: Xingang REN, Wei ZHI, Huping JU, Zhixiang HUANG, Gang WANG, Kaikun NIU, Siliang WANG, Yingsong LI, Xianliang WU, Sungen CAO
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Patent number: 10656160Abstract: A method of quantitatively determining the concentration of at least one analyte in a sample by: (i) adding a portion of the sample to a first analyte assay formulation and to an analyte assay reference formulation to generate a first analyte sample and analyte reference sample and determining the concentration of the at least one analyte in the sample; and/or (ii) adding a portion of the sample to a second analyte assay formulation and determining the concentration of the at least one analyte in the sample, as well as formulations, kits of parts, systems and computer implemented methods associated with the method.Type: GrantFiled: January 4, 2019Date of Patent: May 19, 2020Assignee: Nitto Denko CorporationInventors: Xiaojun Chen, Yingsong Wang, Pei Shan Ho, Xi Er Yeo
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Patent number: 10613097Abstract: A method of quantitatively determining the concentration of at least one analyte in a sample by: (i) adding a portion of the sample to a first analyte assay formulation and to an analyte assay reference formulation to generate a first analyte sample and analyte reference sample and determining the concentration of the at least one analyte in the sample and/or (ii) adding a portion of the sample to a second analyte assay formulation and determining the concentration of the at least one analyte in the sample, as well as formulations, kits of parts, systems and computer implemented methods associated with the method.Type: GrantFiled: January 4, 2019Date of Patent: April 7, 2020Assignee: Nitto Denko CorporationInventors: Xiaojun Chen, Yingsong Wang, Pei Shan Ho, Xi Er Yeo
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Patent number: 10436792Abstract: A method of quantitatively determining the concentration of at least one analyte in a sample. The method may involve adding a portion of the sample to a first analyte assay formulation and to an analyte assay reference formulation to generate a first analyte sample and analyte reference sample, and determining the concentration of the at least one analyte in the sample. The method may additionally or alternatively involve adding a portion of the sample to a second analyte assay formulation, and determining the concentration of the at least one analyte in the sample, or both. The method may be associated with various formulations, kits of parts, systems and computer implemented methods.Type: GrantFiled: June 10, 2014Date of Patent: October 8, 2019Assignee: Nitto Denko CorporationInventors: Xiaojun Chen, Yingsong Wang, Pei Shan Ho, Xi Er Yeo
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Publication number: 20190187147Abstract: There is disclosed herein a method of quantitatively determining the concentration of at least one analyte in a sample, the method comprising the steps of either: (i) adding a portion of the sample to a first analyte assay formulation and to an analyte assay reference formulation to generate a first analyte sample and analyte reference sample and determining the concentration of the at least one analyte in the sample and/or (ii) adding a portion of the sample to a second analyte assay formulation and determining the concentration of the at least one analyte in the sample. Also disclosed herein are formulation, kits of parts, systems and computer implemented methods associated with said method.Type: ApplicationFiled: January 4, 2019Publication date: June 20, 2019Applicant: Nitto Denko CorporationInventors: Xiaojun Chen, Yingsong Wang, Pei Shan Ho, Xi Er Yeo
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Publication number: 20190187146Abstract: There is disclosed herein a method of quantitatively determining the concentration of at least one analyte in a sample, the method comprising the steps of either: (i) adding a portion of the sample to a first analyte assay formulation and to an analyte assay reference formulation to generate a first analyte sample and analyte reference sample and determining the concentration of the at least one analyte in the sample and/or (ii) adding a portion of the sample to a second analyte assay formulation and determining the concentration of the at least one analyte in the sample. Also disclosed herein are formulation, kits of parts, systems and computer implemented methods associated with said method.Type: ApplicationFiled: January 4, 2019Publication date: June 20, 2019Applicant: Nitto Denko CorporationInventors: Xiaojun Chen, Yingsong Wang, Pei Shan Ho, Xi Er Yeo
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Publication number: 20170010276Abstract: There is disclosed herein a method of quantitatively determining the concentration of at least one analyte in a sample, the method comprising the steps of either: (i) adding a portion of the sample to a first analyte assay formulation and to an analyte assay reference formulation to generate a first analyte sample and analyte reference sample and determining the concentration of the at least one analyte in the sample and/or (ii) adding a portion of the sample to a second analyte assay formulation and determining the concentration of the at least one analyte in the sample. Also disclosed herein are formulations, kits of parts, systems and computer implemented methods associated with said method.Type: ApplicationFiled: June 10, 2014Publication date: January 12, 2017Applicant: Nitto Denko CorporationInventors: Xiaojun Chen, Yingsong Wang, Pei Shan Ho, Xi Er Yeo