Abstract: A thin film transistor and its manufacturing method, an array substrate and a display device are disclosed, the thin film transistor is of a gate bottom contact type, and includes a gate electrode (3) and a gate insulation layer (2), the gate insulation layer (2) is provided with a recess (4) at a position corresponding to the gate electrode (3). With the thin film transistor, the problem of wire breakage in the active layer at the channel between the source/drain electrodes can be avoided, the performance and stability of the thin film transistor is improved, and the production cost is lowered down.

Abstract: A dual gate oxide thin-film transistor and manufacturing method for the same. The thin-film transistor comprises: a substrate; a bottom gate electrode formed on the substrate; a first gate insulation layer disposed on the bottom gate electrode; a semiconductor layer formed on the first gate insulation layer; a second gate insulation layer formed on the semiconductor layer; and a top gate electrode formed on the second gate insulation layer; wherein, the transistor further comprises a data line, the data line and the bottom gate electrode, or the data line and the top gate electrode are located at a same metal layer. Because the data line and the bottom gate (or the top gate) electrodes are located at a same metal layer, and through one photolithography for patterning to reduce the number of the mask, decrease the production cost. Besides, the stability and the response speed are increased.

Abstract: The present disclosure relates to a coplanar double gate electrode oxide thin film transistor, includes a substrate, a bottom gate electrode, a first gate electrode insulating layer, a oxide semiconductor layer, a source electrode contact area and a drain electrode contact area, a second gate electrode insulating layer and a top gate electrode, wherein, the upper surface of the substrate is recessed toward the inside of the substrate to form a groove, the bottom gate electrode is formed in the groove, so that the upper surface of the bottom gate electrode and the upper surface of the substrate are in the same horizontal plane. The thin film transistor of the present disclosure has the characteristics of the double gate electrode and the coplanar structure, and is capable of improving the stability of the thin film transistor, optimizing the response speed thereof, and lowering the driving voltage.

Abstract: The manufacturing method of oxide thin film transistors (TFTs) includes: providing a substrate and forming an oxide semiconductor active layer on the substrate; depositing an insulation dielectric layer on the active layer; and applying an annealing process to components formed after the insulation dielectric layer is deposited. After depositing the gate insulation layer on the oxide semiconductor active layer, the annealing process is applied to the formed component, which eliminates the difference of the component performance caused by the insulation dielectric layer formed by different film formation processes such that the reproducibility of the film formation processes may be enhanced.

Abstract: The disclosure discloses an array substrate, a liquid crystal display panel and a manufacturing method, the array substrate includes designing a data line layer and a light shield layer on a same layer, moreover, a source electrode layer, a drain electrode layer, an oxide semiconductor layer and a common electrode layer are designed on a same layer, the source electrode layer, the drain electrode layer and the common electrode layer are formed by doping the oxide semiconductor material, the source electrode layer, the drain electrode layer and the common electrode layer can be conductive by increasing conductivity thereof. By the method above, the disclosure can reduce the amount of masks in processes and costs in production significantly.

Abstract: The manufacturing method of oxide thin film transistors (TFTs) includes: providing a substrate and forming an oxide semiconductor active layer on the substrate; depositing an insulation dielectric layer on the active layer; and applying an annealing process to components formed after the insulation dielectric layer is deposited. After depositing the gate insulation layer on the oxide semiconductor active layer, the annealing process is applied to the formed component, which eliminates the difference of the component performance caused by the insulation dielectric layer formed by different film formation processes such that the reproducibility of the film formation processes may be enhanced.

Abstract: An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

Abstract: The disclosure discloses an array substrate, a liquid crystal display panel and a manufacturing method, the array substrate includes designing a data line layer and a light shield layer on a same layer, moreover, a source electrode layer, a drain electrode layer, an oxide semiconductor layer and a common electrode layer are designed on a same layer, the source electrode layer, the drain electrode layer and the common electrode layer are formed by doping the oxide semiconductor material, the source electrode layer, the drain electrode layer and the common electrode layer can be conductive by increasing conductivity thereof. By the method above, the disclosure can reduce the amount of masks in processes and costs in production significantly.

Abstract: A dual gate oxide thin-film transistor and manufacturing method for the same. The thin-film transistor comprises: a substrate; a bottom gate electrode formed on the substrate; a first gate insulation layer disposed on the bottom gate electrode; a semiconductor layer formed on the first gate insulation layer; a second gate insulation layer formed on the semiconductor layer; and a top gate electrode formed on the second gate insulation layer; wherein, the transistor further comprises a data line, the data line and the bottom gate electrode, or the data line and the top gate electrode are located at a same metal layer. Because the data line and the bottom gate (or the top gate) electrodes are located at a same metal layer, and through one photolithography for patterning to reduce the number of the mask, decrease the production cost. Besides, the stability and the response speed are increased.

Abstract: The present invention provides an array substrate and a liquid display panel, the array substrate comprises: a passivation layer or a gate insulator layer are formed by radio frequency and annealing under the presence of compressed air after forming the oxide semiconductor material layer. By this way, it can regulate difference between threshold voltages of the plurality of oxide thin film transistors, and it can further reduce drift of threshold voltages of oxide semiconductor TFT, to achieve providing a base of a uniform display technology.

Abstract: The present disclosure relates to a coplanar double gate electrode oxide thin film transistor, includes a substrate, a bottom gate electrode, a first gate electrode insulating layer, a oxide semiconductor layer, a source electrode contact area and a drain electrode contact area, a second gate electrode insulating layer and a top gate electrode, wherein, the upper surface of the substrate is recessed toward the inside of the substrate to form a groove, the bottom gate electrode is formed in the groove, so that the upper surface of the bottom gate electrode and the upper surface of the substrate are in the same horizontal plane. The thin film transistor of the present disclosure has the characteristics of the double gate electrode and the coplanar structure, and is capable of improving the stability of the thin film transistor, optimizing the response speed thereof, and lowering the driving voltage.

Abstract: A metal oxide thin film transistor and a method of preparing the same, the method includes the following steps: providing a substrate; forming a buffer layer, an oxide film layer, a gate insulating layer and a first metal layer sequentially on the substrate; using a photomask to perform patterning process respectively on the first metal layer, the gate insulating layer and the oxide film layer, to form a gate, a patterned gate insulating layer and an oxide active layer. In the preparation of the film layer structures a method of depositing then etching respectively is adopted, and only one photomask is needed to implement the patterning process on the film layer structures such as the oxide active layer, the gate, and so on.

Abstract: The present disclosure relates to a TFT, a manufacturing method of TFTs, and a CMOS component. The TFT includes a substrate, a LTPS layer arranged close to the substrate, a first light doping area and a second light doping area on the same layer with the LTPS layer and arranged at two opposite ends of the LTPS layer, a first heavy doping area and a second heavy doping area arranged at the same layer with the LTPS layer, a first insulation layer having a first portion and a second portion, and a gate arranged on the second portion. The first heavy doping area is arranged on one end of the first light doping area farther away from the LTPS layer, and the second heavy doping area is arranged on one end of the second light doping area farther away from the LTPS layer.

Abstract: The invention provides a manufacturing method of a TFT substrate. The manufacturing method includes: disposing a groove on a base; filling a metal material in the groove to form a first metal layer, the first metal layer acting as a gate of the TFT substrate; disposing an insulating layer on the first metal layer and the base; sequentially disposing a semiconductor material layer and a second metal layer on the insulating layer, the second metal layer forming a drain and a source of the TFT substrate, and the semiconductor material layer being disposed between the drain and the gate. The invention further provides a liquid crystal display panel and a TFT substrate. By the above means, the invention can reduce the thickness of the TFT substrate, which is beneficial to the realization of ultra-thin liquid crystal display panel and can improve display panel of the liquid crystal display panel.

Abstract: An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

Abstract: An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

Abstract: The present disclosure provides a thin film transistor (TFT), its manufacturing method, an array substrate and a display device. The method for manufacturing the TFT includes steps of forming patterns of a gate electrode, a source electrode and a drain electrode on a base substrate; and forming a pattern of an active layer and a pattern of a passivation layer covering the active layer by a single patterning process. The passivation layer is made of a negative or positive photoresist, and the active layer is insulated from the gate electrode and electrically connected to the source electrode and the drain electrode.

Abstract: An organic thin film transistor and a method of manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor including: a source electrode (4), a drain electrode (5), an organic semiconductor layer (6) disposed on the source electrode (4) and drain electrode (5), and a modified layer (7); the modified layer (7) is disposed at a position below an organic semiconductor layer (6) and corresponding to the source electrode (4) and the drain electrode (5), covers the source electrode (4) and the drain electrode (5), and is configured to change a contact angle on both the source electrode (4) and the drain electrode (5). The thin film transistor avoids the problems of poor formation effects and easy disconnection of the organic semiconductor layer (6) because of the large contact angle on electrode layers, and therefore reduces production costs.

Abstract: An organic thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof, and a display device; and the preparation method of the organic thin film transistor comprises: forming a source-drain metal layer including a source electrode (12a) and a drain electrode (12b), and forming an organic semiconductor active layer (13) in contact with the source electrode (12a) and the drain electrode (12b); and forming an organic insulating thin film (140) on a substrate (10) where the source-drain metal layer and the organic semiconductor active layer (13) have been formed, thinning the organic insulating thin film (140) and curing the thinned organic insulating thin film (140), or curing the organic insulating thin film (140) and thinning the cured organic insulating thin film (140), to form an organic insulating layer (14). The method can be used to form a thin and uniform organic insulating layer, so a technical difficulty in forming a via hole is reduced.

Abstract: A thin film transistor and its manufacturing method, an array substrate and a display device are disclosed, the thin film transistor is of a gate bottom contact type, and includes a gate electrode (3) and a gate insulation layer (2), the gate insulation layer (2) is provided with a recess (4) at a position corresponding to the gate electrode (3). With the thin film transistor, the problem of wire breakage in the active layer at the channel between the source/drain electrodes can be avoided, the performance and stability of the thin film transistor is improved, and the production cost is lowered down.