Patents by Inventor Ying-Yan Huang

Ying-Yan Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metallization process to reduce stress between Al-Cu layer and titanium nitride layer
    Patent number: 6699789
    Abstract: Embodiments of the present invention are directed to a metallization process for reducing the stress existing between the Al—Cu layer and the titanium nitride (TiN) layer, and solving the galvanic problem. The process does so by cooling the wafer in the vacuum apparatus where the metallization process is performed after formation of the Al—Cu layer and before the formation of the TiN layer. In accordance with an aspect of the present invention, a metallization process comprises placing a wafer in an Al—Cu sputtering chamber to form an Al—Cu layer on the wafer, and transferring the wafer to a titanium nitride sputtering chamber. An inert gas is introduced into the titanium nitride sputtering chamber to cool the wafer. A titanium nitride layer is formed on the Al—Cu layer of the wafer in the titanium nitride sputtering layer after cooling the wafer.
    Type: Grant
    Filed: March 27, 2002
    Date of Patent: March 2, 2004
    Assignee: Mosel Vitelic, Inc.
    Inventors: Zhih-Sheng Yang, Chung-Yan Cheng, Ying-Yan Huang, Jason C. S. Chu
  • Metallization process
    Publication number: 20020142573
    Abstract: Embodiments of the present invention are directed to a metallization process for reducing the stress existing between the Al—Cu layer and the titanium nitride (TiN) layer, and solving the galvanic problem. The process does so by cooling the wafer in the vacuum apparatus where the metallization process is performed after formation of the Al—Cu layer and before the formation of the TiN layer. In accordance with an aspect of the present invention, a metallization process comprises placing a wafer in an Al—Cu sputtering chamber to form an Al—Cu layer on the wafer, and transferring the wafer to a titanium nitride sputtering chamber. An inert gas is introduced into the titanium nitride sputtering chamber to cool the wafer. A titanium nitride layer is formed on the Al—Cu layer of the wafer in the titanium nitride sputtering layer after cooling the wafer.
    Type: Application
    Filed: March 27, 2002
    Publication date: October 3, 2002
    Applicant: MOSEL VITELIC, INC. A Taiwanese Corporation
    Inventors: Zhih-Sheng Yang, Chung-Yan Cheng, Ying-Yan Huang, Jason C.S. Chu