Abstract: A rapid sintering system and rapid sintering method, the rapid sintering system comprising: a furnace body (110) comprising a hearth (111) and a furnace mouth (112) that communicate with each other; a lifting device (120) arranged below the furnace mouth (112), comprising a support (122) and a sample stage (121), the sample stage (121) being disposed on the support (122); a temperature acquisition device (130), disposed on the sample stage (121); a control device (140), disposed outside of the hearth (111), electrically connected to the lifting device (120) and the temperature acquisition device (130) and used to control lifting of the lifting device (120) according to a temperature acquired by the temperature acquisition device (130) and a preset sintering condition; and a spacer (150), disposed at a first end of the lifting device (120), a first spacing being present between the spacer (150) and the sample stage (121), and the furnace mouth (112) is blocked by the spacer (150) when the rapid sintering syste

Abstract: Disclosed is a sintering furnace comprising a furnace body and a lifting device, wherein the furnace body comprises a furnace chamber (10) and a furnace mouth (20), the furnace chamber (10) is connected with the furnace mouth (20), wherein the sintering furnace further comprises a sealing member (30) provided at the lifting device; when the sintering furnace is in a loading or unloading condition, the sealing member (30) blocks the furnace mouth (20). When the sintering furnace is in an unloading condition, the sealing member (30) can block the furnace mouth (20), the furnace chamber (10) does not contact with the outside directly, thus the temperature in the furnace chamber (10) will not drop sharply, and the service life of the sintering furnace will be increased.

Abstract: A rapid sintering system and rapid sintering method, the rapid sintering system comprising: a furnace body (110) comprising a hearth (111) and a furnace mouth (112) that communicate with each other; a lifting device (120) arranged below the furnace mouth (112), comprising a support (122) and a sample stage (121), the sample stage (121) being disposed on the support (122); a temperature acquisition device (130), disposed on the sample stage (121); a control device (140), disposed outside of the hearth (111), electrically connected to the lifting device (120) and the temperature acquisition device (130) and used to control lifting of the lifting device (120) according to a temperature acquired by the temperature acquisition device (130) and a preset sintering condition; and a spacer (150), disposed at a first end of the lifting device (120), a first spacing being present between the spacer (150) and the sample stage (121), and the furnace mouth (112) is blocked by the spacer (150) when the rapid sintering syste

Abstract: Disclosed is a sintering furnace comprising a furnace body and a lifting device, wherein the furnace body comprises a furnace chamber (10) and a furnace mouth (20), the furnace chamber (10) is connected with the furnace mouth (20), wherein the sintering furnace further comprises a sealing member (30) provided at the lifting device; when the sintering furnace is in a loading or unloading condition, the sealing member (30) blocks the furnace mouth (20). When the sintering furnace is in an unloading condition, the sealing member (30) can block the furnace mouth (20), the furnace chamber (10) does not contact with the outside directly, thus the temperature in the furnace chamber (10) will not drop sharply, and the service life of the sintering furnace will be increased.

Abstract: The invention discloses a method for adjusting metal polishing rate and reducing defects arisen in a polishing process, in which a electric conduction system is additionally provided to a polishing apparatus to electrify the polishing fluid; in the polishing process, the polishing fluid flows through the polishing pad and the wafer to be polished, such that the polished metal surface of the wafer is electrically charged so as to control the oxidation of the polished metal surface of the wafer. The invention has solved the problem that the dishing and erosion defects are prone to be formed in the existing polishing process, the potential of the polishing fluid is changed by means of the additional electric conduction system and thus the polishing rate of the polished metal is controlled so as to reduce the dishing and erosion defects occurred in the polishing process.