Abstract: A method for balancing thermal stresses in semiconductor switching devices may include (a) monitoring temperatures of the semiconductor switching devices to provide a temperature difference between two of the switching devices; and (b) based on the temperature difference, providing a zero-sequence component to be used for adjusting conduction times of each of the semiconductor devices.

Abstract: A power module includes first and second electrode terminals adapted to electrically connect to a power source, a first switch element, a second switch element, a first Kelvin source pin, and a second Kelvin source pin. The first switch element is electrically connected to the first electrode terminal The second switch element is electrically connected between the first switch element and the second electrode terminal and includes a drain and a source electrically connected to the first switch element and the second electrode terminal respectively. The first Kelvin source pin is electrically connected to the source of the second switch element and is adapted to receive a gate drive signal for driving the second switch element. The second Kelvin source pin is electrically connected to the source of the second switch element and is configured to be electrically connected to a snubber circuit.

Abstract: A method for balancing thermal stresses in semiconductor switching devices may include (a) monitoring temperatures of the semiconductor switching devices to provide a temperature difference between two of the switching devices; and (b) based on the temperature difference, providing a zero-sequence component to be used for adjusting conduction times of each of the semiconductor devices.

Abstract: A gate driver circuit receiving an input control signal and providing a voltage at a gate terminal of a semiconductor switching device (e.g., an IGBT) may include: (i) a first voltage source providing a first voltage; (ii) a second voltage source providing a second voltage, wherein the first voltage is higher than the second voltage; and (iii) a selector circuit selecting, based on the input control signal's logic state, either the first voltage or the second voltage to be placed on the gate terminal of the semiconductor switching device.

Abstract: A gate driver circuit receiving an input control signal and providing a voltage at a gate terminal of a semiconductor switching device (e.g., an IGBT) may include: (i) a first voltage source providing a first voltage; (ii) a second voltage source providing a second voltage, wherein the first voltage is higher than the second voltage; and (iii) a selector circuit selecting, based on the input control signal's logic state, either the first voltage or the second voltage to be placed on the gate terminal of the semiconductor switching device.

Abstract: An inverter system is provided. The inverter system has a first voltage zone and a second voltage zone isolated with each other. The inverter system includes a power unit, a controller, a power regulator, an isolated power supply, a driver and an inverter. The power unit in the first voltage zone provides an initial power. The controller in the first voltage zone generates a power control signal. The power regulator in the first voltage zone receives the power control signal and the initial power and outputs a first adjustable power accordingly. The isolated power supply has a primary part and a secondary part in the first and second voltage zones respectively. The primary part receives the first adjustable power, and the secondary part outputs a second adjustable power. The driver in the second voltage zone receives the second adjustable power and outputs an adjustable driving signal to control the inverter.