Abstract: The portable docking station comprises a movable system and at least one set of holders. The movable system comprises a central supporter; a first lateral supporter; a second lateral supporter; a first upper rack movably coupled to the central supporter and rotatably coupled to the first lateral supporter; a second upper rack movably coupled to the central supporter and rotatably coupled to the second lateral supporter; a first lower rack rotatably coupled to the central supporter and movably coupled to the first lateral supporter; and a second lower rack rotatably coupled to the central supporter and movably coupled to the second lateral supporter. Each of the set of holders comprises an upper holder coupled to the first upper rack; and a lower holder coupled to the first lower rack. A portable docking system of using the aforementioned portable docking station is also disclosed.

Abstract: A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure.

Abstract: A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure.

Abstract: A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure.

Abstract: A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure.

Abstract: A USB port includes a casing, first pins and second pins. The casing includes outer walls and a pillar. An accommodation space is formed between the outer walls. The pillar is disposed in the accommodation space. The casing has an opening exposing the pillar, and the pillar has a first surface, a second surface adjacent to the first surface, a third surface opposite to the first surface, and a fourth surface opposite to the second surface. The first pins are disposed at the first surface and the third surface, and the first pins conform to the USB 2.0 specification and the USB 3.0 specification. The second pins are disposed at the second surface and the fourth surface, and the second pins conform to the USB 3.0 specification. A USB plug for joined with the USB port is also provided.

Abstract: A USB port includes a casing, first pins and second pins. The casing includes outer walls and a pillar. An accommodation space is formed between the outer walls. The pillar is disposed in the accommodation space. The casing has an opening exposing the pillar, and the pillar has a first surface, a second surface adjacent to the first surface, a third surface opposite to the first surface, and a fourth surface opposite to the second surface. The first pins are disposed at the first surface and the third surface, and the first pins conform to the USB 2.0 specification and the USB 3.0 specification. The second pins are disposed at the second surface and the fourth surface, and the second pins conform to the USB 3.0 specification. A USB plug for joined with the USB port is also provided.

Abstract: The present invention relates to an electrical connector, comprises a housing; a first connector; a second connector, wherein the second connector is disposed below the first connector and has a transmission speed different from the first connector; a driving member; an actuation rod; a driving spring; a lock sheet; an actuation spring; and a torsion spring. With the mentioned structure, the electrical connector is able to be plugged with a USB2.0 connector plug or a USB3.0 connector plug for satisfying requirements of various transmission speeds.