Abstract: A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 4221C). Annealing the material, at a temperature in the range 300-4221C for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material.

Abstract: Described is a titanium sputtering target to provide improved step coverage and a method of making same.

Abstract: A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc (200)/Ihcp (10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten.

Abstract: A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten. High purity cobalt is defined as having an oxygen content of not more than 500 ppm, a Ni content of not more than 200 ppm, contents of Fe, Al and Cr of not more than 50 ppm each, and Na and K of less than 0.5 ppm. The disclosed sputter target is manufactured by subjecting the material to cold-working treatments (less than 422° C.). Annealing the material, at a temperature in the range 300-422° C. for several hours, between cold working treatments significantly increases the amount of cold work which could be imparted into the material.

Abstract: Described is a titanium sputtering target to provide improved step coverage and a method of making same.

Abstract: A high purity cobalt sputter target is disclosed which contains a face centered cubic (fcc) phase and a hexagonal close packed (hcp) phase, wherein the value of the ratio of X-ray diffraction peak intensity, Ifcc(200)/Ihcp(10 {overscore (1)}1), is smaller than the value of the same ratio in a high purity cobalt material obtained by cooling fcc cobalt to room temperature from the high temperature at which it is molten.

Abstract: Described is a titanium sputtering target to provide improved step coverage and a method of making same.

Abstract: A method is provided for reducing the size and area coverage of surface carbides formed during the box annealing of steel strip. In one aspect the method includes providing a casting consisting essentially of, by weight percent, 0.08% max. carbon, 1.0% max. manganese, 0.06% max. aluminum, up to 0.1% max. chromium, up to 0.1% max. titanium, up to 0.1% max. niobium and up to 0.1% max. vanadium. The casting is hot rolled to strip and then cold rolled. After cold rolling the strip is box annealed at a temperature above the A.sub.1 temperature. The strip is cooled from the A.sub.1 temperature such that the rate of cooling is at least 30.degree. C./hour through the range of from about 727.degree. C. to about 700.degree. C. In another aspect the invention includes casting a steel of the aforementioned composition wherein the vanadium is at least 0.015%. The invention includes steel products made according to the methods just described.