Patents by Inventor Yinxin Yang

Yinxin Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Via ground structures
    Patent number: 12787745
    Abstract: In some aspects, the techniques described herein relate to an apparatus including: a semiconductor device substrate material; a first signal conductor incorporated into the semiconductor device substrate material; a second signal conductor incorporated into the semiconductor device substrate material; and a ground conductor incorporated into the semiconductor device substrate material between the first signal conductor and the second signal conductor, wherein the ground conductor includes a first elongated portion and a second elongated portion arranged at an angle relative to the first elongated portion.
    Type: Grant
    Filed: April 20, 2023
    Date of Patent: November 3, 2026
    Assignee: CISCO TECHNOLOGY, INC.
    Inventors: Wenbin Ma, Mike Sapozhnikov, Weiying Ding, David Nozadze, Yinxin Yang
  • PCB WITH BREAKOUT TO ENABLE HIGHER DENSITY, LAYER COUNT AND ENHANCED PERFORMANCE
    Publication number: 20250311091
    Abstract: A PCB includes a unique fanout pattern that reduces cross-talk in a new way, and still enables the power routing into the connector of the PCB. Both signal integrity and power integrity performance meets the 224 Gbps requirement in terms of crosstalk, insertion loss, and return loss. In addition, the techniques disclosed herein improve on the density of the PCB and avoid the need for additional layer changing transition VIAs.
    Type: Application
    Filed: August 21, 2024
    Publication date: October 2, 2025
    Inventors: Mingjian Gao, Mingtong Zuo, Wenbin Ma, Mike Sapozhnikov, Yuqing Zhu, Weiying Ding, Yinxin Yang, David Nozadze
  • VIA GROUND STRUCTURES
    Publication number: 20240355737
    Abstract: In some aspects, the techniques described herein relate to an apparatus including: a semiconductor device substrate material; a first signal conductor incorporated into the semiconductor device substrate material; a second signal conductor incorporated into the semiconductor device substrate material; and a ground conductor incorporated into the semiconductor device substrate material between the first signal conductor and the second signal conductor, wherein the ground conductor includes a first elongated portion and a second elongated portion arranged at an angle relative to the first elongated portion.
    Type: Application
    Filed: April 20, 2023
    Publication date: October 24, 2024
    Inventors: Wenbin Ma, Mike Sapozhnikov, Weiying Ding, David Nozadze, Yinxin Yang