Abstract: The present disclosure provides, in part, methods for evaluating, identifying, and/or producing (e.g., manufacturing) a CTLA4-Fc fusion protein, e.g., abatacept. In some instances, methods herein allow highly resolved evaluation of abatacept useful for, inter alia, manufacturing abatacept, characterizing abatacept, identifying and/or confirming abatacept, monitoring the structure of abatacept, comparing abatacept preparations made over time or made under different conditions, and/or controlling the structure of abatacept.

Abstract: The present disclosure provides, in part, methods for evaluating, identifying, and/or producing (e.g., manufacturing) a CTLA4-Fc fusion protein, e.g., abatacept. In some instances, methods herein allow highly resolved evaluation of abatacept useful for, inter alia, manufacturing abatacept, characterizing abatacept, identifying and/or confirming abatacept, monitoring the structure of abatacept, comparing abatacept preparations made over time or made under different conditions, and/or controlling the structure of abatacept.

Abstract: A novel chalcogenide material has a bulk composition which has a first material selected from the group of Si and Sn, a second material selected from the group of Sb, and a third material selected from the group of Te. The first material, second material, and third material are in a ratio of (Six or Sny) Sb2 Te5, where x is 1?x?5, and y is 0.5?y?2.0. The material can be used in a switch device, which includes a dielectric/heater layer having a first surface and a second surface opposite the first surface, and the material having a first surface and a second surface opposite the first surface; with the first surface of the material immediately adjacent to and in contact with the first surface of the dielectric/heater layer. A first electrical contact is on the second surface of the dielectric/heater layer. A second electrical contact is on the second surface of the phase changing chalcogenide material.