Abstract: Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.

Abstract: Various circuit boards and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first interconnect layer of a circuit board. The first interconnect layer includes a first conductor trace with a first segment that does not include a via land. A first via is formed on the first segment.

Abstract: Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.

Abstract: Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.

Abstract: Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.

Abstract: Various substrates or circuit boards for receiving a semiconductor chip and methods of processing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first opening in a solder mask positioned on a side of a substrate. The first opening does not extend to the side. A second opening is formed in the solder mask that extends to the side. The first opening may serve as an underfill anchor site.

Abstract: An integrated circuit (IC) product includes a redistribution layer (RDL) having at least one conductive layer configured to distribute electrical information from one location to another location in the IC. The RDL also includes a plurality of wire bond pads and a plurality of solder pads. The plurality of solder pads each includes a solder wettable material that is in direct electrical communication with the RDL.

Abstract: Various circuit boards and methods of fabricating the same are disclosed. In one aspect, a method of manufacturing is provided that includes coupling an electrically non-functional component to a surface of a first circuit board. The electrically non-functional component has a first elevation. The surface of the circuit board is adapted to have a semiconductor chip mounted thereon. An electrically functional component is mounted to the surface inward from the electrically non-functional component. The electrically functional component has a second elevation less than the first elevation.

Abstract: Various circuit board lids and methods and using the same are disclosed. In one aspect, an apparatus is provided that includes a lid adapted to cover a semiconductor chip mounted on a circuit board. The lid has a top plate, a first support leg and a second support leg opposite the first support leg adapted to support the lid. The first and second support legs and the top plate define a recess to accommodate the semiconductor chip. The recess has a first opening and a second opening. At least one of the first and second openings extends from the first support leg to the second support leg.

Abstract: Various circuit boards and methods of fabricating the same are disclosed. In one aspect, a method of manufacturing is provided that includes coupling an electrically non-functional component to a surface of a first circuit board. The electrically non-functional component has a first elevation. The surface of the circuit board is adapted to have a semiconductor chip mounted thereon. An electrically functional component is mounted to the surface inward from the electrically non-functional component. The electrically functional component has a second elevation less than the first elevation.

Abstract: According an embodiment, a package-on-package heatsink interposer for use between a top package and a bottom package of a package-on-package device, may include a top heatsink below the top package; an interposer substrate below the top heatsink; a bottom heatsink below the interposer substrate; a first interposer substrate metal layer between the interposer substrate and the top heatsink; a second interposer substrate metal layer between the interposer substrate and the bottom heatsink; and interposer solder balls between the second interposer substrate metal layer and the bottom package.

Abstract: Various semiconductor substrates and methods of processing the same are disclosed. In one aspect, a method of manufacturing is provided that includes mounting a first semiconductor chip on a side of a first substrate. The first substrate has at least one thru-silicon-via. An insulating layer is molded on the side of the first substrate. The insulating layer provides a support structure to enable handling of the first substrate.

Abstract: Various substrates or circuit boards for receiving a semiconductor chip and methods of processing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first opening in a solder mask positioned on a side of a substrate. The first opening does not extend to the side. A second opening is formed in the solder mask that extends to the side. The first opening may serve as an underfill anchor site.

Abstract: A method of manufacturing a substrate for use in electronic packaging having a core, m buildup layers on a first surface of the core and n buildup layers on a second surface of the core, where m?n is disclosed. The method includes forming (m?n) of the m buildup layers on the first surface, and then forming n pairs of buildup layers, with each one of the pairs including one of the n buildup layers formed on the second surface and one of the remaining n of the m buildup layers formed on the first surface. Each buildup layer includes a dielectric layer and a conductive layer formed thereon. The disclosed method protects the dielectric layer in each of buildup layers from becoming overdesmeared during substrate manufacturing by avoiding repeated desmearing of dielectric materials.

Abstract: Various semiconductor die conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a conductor pad of a semiconductor die. The conductor layer has a surface. A polymeric layer is formed on the surface of the conductor layer while a portion of the surface is left exposed. A solder structure is formed on the exposed portion of the surface and a portion of the polymeric layer.

Abstract: Various circuit boards and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first interconnect layer of a circuit board. The first interconnect layer includes a first conductor trace with a first segment that does not include a via land. A first via is formed on the first segment.

Abstract: A method of manufacturing a substrate for use in electronic packaging having a core, m buildup layers on a first surface of the core and n buildup layers on a second surface of the core, where m?n is disclosed. The method includes forming (m?n) of the m buildup layers on the first surface, and then forming n pairs of buildup layers, with each one of the pairs including one of the n buildup layers formed on the second surface and one of the remaining n of the m buildup layers formed on the first surface. Each buildup layer includes a dielectric layer and a conductive layer formed thereon. The disclosed method protects the dielectric layer in each of buildup layers from becoming overdesmeared during substrate manufacturing by avoiding repeated desmearing of dielectric materials.

Abstract: Various circuit boards and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first interconnect layer of a circuit board. The first interconnect layer includes a first conductor trace with a first segment that does not include a via land. A first via is formed on the first segment.

Abstract: Various semiconductor die conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a conductor pad of a semiconductor die. The conductor layer has a surface. A polymeric layer is formed on the surface of the conductor layer while a portion of the surface is left exposed. A solder structure is formed on the exposed portion of the surface and a portion of the polymeric layer.

Abstract: Various semiconductor die conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a conductor pad of a semiconductor die. The conductor layer has a surface. A polymeric layer is formed on the surface of the conductor layer while a portion of the surface is left exposed. A solder structure is formed on the exposed portion of the surface and a portion of the polymeric layer.