Abstract: A method for preparing a microstructure on the surface of glass by titanium oxide nanoparticle-assisted infrared nanosecond laser, including the following steps: (1) dropwise applying a titanium oxide nanoparticle hydrogel onto the surface of a glass sample; (2) pressing another piece of glass on the surface of the hydrogel, so the hydrogel is evenly distributed between the two pieces of glass, and allowing the two pieces of glass to stand horizontally for a period of time to air-dry the hydrogel; (3) separating the two pieces of glass to obtain a glass with a uniform titanium oxide nanoparticle coating; (4) forming a microstructure using an infrared nanosecond laser with a wavelength of 1064 nm; and (5) performing after-treatment, including ultrasonically cleaning the sample with acetone, absolute ethanol and deionized water respectively for 10 min to remove titanium oxide nanoparticles attached to the surface, to obtain a glass sample with the microstructure.

Abstract: A microelectronic device includes a stack structure comprising blocks separated from one another by dielectric slot structures and each including a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. At least one of the blocks comprising a stadium structure comprising opposing staircase structures each having steps comprising edges of the tiers; and a filled trench vertically overlying and within horizontal boundaries of the stadium structure of the at least one of the blocks. The filled trench includes a dielectric liner material on the opposing staircase structures of the stadium structure and on inner sidewalls of the two bridge regions and at least one dielectric structure doped with one or more of carbon and boron on the dielectric liner material, the at least one dielectric structure horizontally overlapping the steps of the stadium structure.

Abstract: A method for calculating the steady-state fault current of a modular multilevel converter (MMC) comprises calculating the dc-side critical resistance values RA/B, RB/C and RC/D of the MMC based on the bridge arm inductance coefficient k and the ac-side reactance Xac of the MMC; Then, determining the operating modes of the MMC based on RA/B, RB/C and RC/D, and calculating the steady-state dc fault current and the conduction overlap angle respectively under various operating modes without considering the ac-side resistance based on the parameters k, Us, Rdc and the dc-side critical resistance values RA/B, RB/C and RC/D; After that the steady-state AC fault current amplitude and phase angle for each operating mode without considering the AC side resistance are calculated based on the DC current and conduction overlap angle for each operating mode, respectively. Finally, the steady-state AC fault current amplitude and phase angle are calculated for various operating modes considering the AC side resistance.

Abstract: The present invention relates to the field of digital signal processing, and in particular to a Costas sequence time-frequency joint synchronization method based on all-phase spectrum correction. The method improves the defects existing in a discrete frequency spectrum correction algorithm using short-time Fourier transform and sliding correlation. The improvement mainly comprises: the present disclosure provides a solution based on iterative optimization: when an actual frequency offset is an integral multiple of the spectral resolution, a large error can occur, frequency offset correction and time delay correction are carried out on a signal by using an estimated value having a large estimated error, then estimation is carried out again, and the frequency offset of the signal is not a special value by means of an iteration mode.

Abstract: An embedded GPU-based wideband parallel channelized receiving method includes: constructing an OpenCL platform; decimating a wideband signal read in the OpenCL platform at an interval indicated by the number of channels; assigning data in each row to one of multiple work groups for processing; filtering data on each of channels based on a coefficient of a polyphase filter on a branch; multiplying the filtered data by a factor; and performing an FFT on the formed two-dimensional matrix by columns to obtain data outputted from each of the channels.

Abstract: The present invention relates to the field of digital signal processing, and in particular to a Costas sequence time-frequency joint synchronization method based on all-phase spectrum correction. The method improves the defects existing in a discrete frequency spectrum correction algorithm using short-time Fourier transform and sliding correlation. The improvement mainly comprises: the present disclosure provides a solution based on iterative optimization: when an actual frequency offset is an integral multiple of the spectral resolution, a large error can occur, frequency offset correction and time delay correction are carried out on a signal by using an estimated value having a large estimated error, then estimation is carried out again, and the frequency offset of the signal is not a special value by means of an iteration mode.

Abstract: A method for calculating the steady-state fault current of a modular multilevel converter (MMC) comprises calculating the dc-side critical resistance values RA/B, RB/C and RC/D of the MMC based on the bridge arm inductance coefficient k and the ac-side reactance Xac of the MMC; Then, determining the operating modes of the MMC based on RA/B, RB/C and RC/D, and calculating the steady-state dc fault current and the conduction overlap angle respectively under various operating modes without considering the ac-side resistance based on the parameters k, Us, Rdc and the dc-side critical resistance values RA/B, RB/C and RC/D; After that the steady-state AC fault current amplitude and phase angle for each operating mode without considering the AC side resistance are calculated based on the DC current and conduction overlap angle for each operating mode, respectively. Finally, the steady-state AC fault current amplitude and phase angle are calculated for various operating modes considering the AC side resistance.

Abstract: It discloses a ring-connected bridge-type multi-port hybrid DC circuit breaker. When the number of ports is n, n is an integer greater than or equal to 2, the ring-connected bridge-type multi-port hybrid DC circuit breaker includes: an upper DC bus bar, a lower DC bus bar, n thyristor arms, n diode arms, a main breaker branch, and n bypass branches; each thyristor arm connects in series with a diode arm, forming a series circuit; a bypass branch is connected between every two adjacent series circuits, a port is provided at the connection point of the thyristor arm and the diode arm in each series circuit, and the port is used to connect the protected components or the DC lines.

Abstract: It discloses a ring-connected bridge-type multi-port hybrid DC circuit breaker. When the number of ports is n, n is an integer greater than or equal to 2, the ring-connected bridge-type multi-port hybrid DC circuit breaker includes: an upper DC bus bar, a lower DC bus bar, n thyristor arms, n diode arms, a main breaker branch, and n bypass branches; each thyristor arm connects in series with a diode arm, forming a series circuit; a bypass branch is connected between every two adjacent series circuits, a port is provided at the connection point of the thyristor arm and the diode arm in each series circuit, and the port is used to connect the protected components or the DC lines.

Abstract: The present invention discloses a BiSbTeSe-based thermoelectric material, whose general formula is BimSbnTexSeyMz; wherein, m=0.4-0.6, n=1.4-1.6, x=2.7-2.9, y=0.075-0.3, z=0.02-0.15, M is one or more elements of S, Si, P, Ge, Sn, Ce, Li, I, Br, Al, Cu, Ag, Yb, Tm, La, Gd and Dy. The BiSbTeSe-based thermoelectric material is prepared through powder mixing, alloy smelting and other steps. The BiSbTeSe-based thermoelectric material in the present invention has the advantages of low thermal conductivity and good thermoelectric properties, which expands the application area of thermoelectric material.