Abstract: The present disclosure provides a semiconductor structure and a method of forming the same. The semiconductor structure includes: a substrate doped with a first ion, a deep trench structure disposed in the substrate, a barrier doped region disposed on a top of the substrate and the deep trench structure, a first epitaxial layer disposed on the barrier doped region, a body region disposed in the first epitaxial layer, a source region disposed in the body region, a gate structure disposed in the first epitaxial layer, and a collector region disposed at a bottom of the substrate. By means of the semiconductor structure, performance of an insulated gate bipolar transistor can be improved.

Abstract: An IGBT device and a method for manufacturing it, the device includes a super junction structure that has several N-type pillars and P-type pillars arranged alternately; a cell unit that is located in an N-type epitaxial layer, and the N-type epitaxial layer is located above the N-type substrate; each cell unit includes a trench gate, a P-type body region, and a source region; an N-type carrier injection layer, the N-type carrier injection layer is located in the N-type epitaxial layer, and the N-type carrier injection layer is spaced apart from the N-type substrate by the N-type epitaxial layer; the bottom of the P-type body region is located in the N-type carrier injection layer; and a collector region that is located at the bottom of the N-type substrate.

Abstract: A power supply to be tested is placed in a vacuum chamber; the power supply is turned on and gas pressure in the chamber is reduced. As the gas pressure is reduced below 1 atmosphere, the breakdown voltage decreases; when the breakdown voltage decreases to the value of the applied voltage, arcing occurs as long as the applied voltage is greater than a minima. When a site arcs, the site is noted; the power supply is removed from the vacuum chamber; the arc site is conformally coated and the coated cured. Thereafter, the power supply is returned to the vacuum chamber and the test process repeated until the power supply no longer arcs. Thus the partial pressure test can identify the sites that have a possibility of arcing in the field and the design of the power supply modified by use of one or more conformal coatings or by otherwise changing the configuration of the power supply.

Abstract: A the power supply to be tested is placed in a vacuum chamber; the power supply is turned on and gas pressure in the chamber is reduced. As the gas pressure is reduced below 1 atmosphere, the breakdown voltage decreases; when the breakdown voltage decreases to the value of the applied voltage, arcing occurs as long as the applied voltage is greater than a minima. When a site arcs, the site is noted; the power supply is removed from the vacuum chamber; the arc site is conformally coated and the coated cured. Thereafter, the power supply is returned to the vacuum chamber and the test process repeated until the power supply no longer arcs. Thus the partial pressure test can identify the sites that have a possibility of arcing in the field and the design of the power supply modified by use of one or more conformal coatings or by otherwise changing the configuration of the power supply.