Patents by Inventor Yiqiao Chen

Yiqiao Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Long wavelength infrared superlattice
    Patent number: 8426845
    Abstract: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.
    Type: Grant
    Filed: May 6, 2011
    Date of Patent: April 23, 2013
    Assignee: SVT Associates, Inc.
    Inventors: Yiqiao Chen, Peter Chow
  • Long Wavelength Infrared Superlattice
    Publication number: 20130043459
    Abstract: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide antimonide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.
    Type: Application
    Filed: August 17, 2012
    Publication date: February 21, 2013
    Applicant: SVT ASSOCIATES, INC.
    Inventors: Yiqiao Chen, Peter Chow
  • Long Wavelength Infrared Superlattice
    Publication number: 20130043458
    Abstract: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide antimonide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.
    Type: Application
    Filed: August 17, 2012
    Publication date: February 21, 2013
    Applicant: SVT Associates, Inc.
    Inventors: Yiqiao Chen, Peter Chow
  • Long Wavelength Infrared Superlattice
    Publication number: 20110272672
    Abstract: An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.
    Type: Application
    Filed: May 6, 2011
    Publication date: November 10, 2011
    Applicant: SVT ASSOCIATES, INC.
    Inventors: Yiqiao Chen, Peter Chow