Abstract: The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes.

Abstract: A process for etching a pattern-masked conductor substrate anisotropically so as to obtain very high etch rates comprising adding a polymer-forming fluorocarbon gas and an etch gas at high flow rates to an etch chamber at etching pressures of 77 millitorr to 100 Torr using a high source power and bias power to the substrate support electrode to form a high density plasma. The gases can be added together, sequentially or alternately.

Abstract: A method of forming an optical component is disclosed. The method includes obtaining an optical component precursor having a first medium positioned over a base and converting a portion of the first medium to a second medium. The method further includes removing a portion of the second medium so as to form a ridge in the second medium. The portion of the second medium is removed so as to expose a portion of the first medium.

Abstract: We have found that by applying pulsed bias power to a substrate support electrode in an etch chamber, anisotropic etching of silicon over an insulator layer can be carried out with a minimum of notching at the silicon-insulator interface and with improved uniformity of etching across the substrate.

Abstract: The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening, depositing a protective layer over at least a portion of the inner surface of the shaped opening, and then etching a shaped cavity directly beneath and in continuous communication with the shaped opening. The protective layer protects the etch profile of the shaped opening during etching of the shaped cavity, so that the shaped opening and the shaped cavity can be etched to have different shapes, if desired. In particular embodiments of the method of the invention, lateral etch barrier layers and/or implanted etch stops are also used to direct the etching process. The method of the invention can be applied to any application where it is necessary or desirable to provide a shaped opening and an underlying shaped cavity having varying shapes.

Abstract: A method of forming an optical component having a light transmitting medium positioned over a base is disclosed. The method includes forming a mask over the light transmitting medium. The mask is formed so as to protect a region of the light transmitting region where a waveguide is to be formed. The method also includes applying an etching medium to the light transmitting medium so as to form one or more surfaces of the waveguide. The etching medium includes a fluorine-containing gas, one or more partial passivants and Oxygen.

Abstract: The invention relates to a method of forming an optical component having a light transmitting medium positioned over a base. The method includes forming a mask over the light transmitting medium. The mask is formed so as to protect a region of the light transmitting region where a waveguide is to be formed. The method also includes applying an etching medium to the light transmitting medium so as to form one or more surfaces of the waveguide. The etching medium includes a fluorine containing gas and one or more partial passivants. In some instances, the etching medium excludes oxygen.

Abstract: A method of forming an optical component is disclosed. The method includes obtaining a wafer having a light transmitting medium positioned over a base. The method also includes applying an etching medium to the wafer so as to form one or more surfaces of an optical component in the light transmitting medium. The etching medium is applied in an etching chamber configured to etch a wafer having at least one dimension with a length greater than 6 inches.

Abstract: The present invention pertains to an etch chemistry and method useful for the etching of silicon surfaces. The method is particularly useful in the deep trench etching of silicon where profile control is important. In the case of deep trench etching, at least a portion of the substrate toward the bottom of the trench is etched using a combination of reactive gases including a fluorine-containing compound which does not contain silicon (FC); a silicon-containing compound (SC) which does not contain fluorine; and oxygen (O2).

Abstract: High aspect ratio openings can be etched in silicon having straight walls and rounded bottoms using as an etch gas a mixture including SF6, HBr and O2in a plasma chamber wherein the chamber is connected to an RF power source and the substrate is mounted on a support connected to a bias power source.

Abstract: A multistep etch process for forming high aspect ratio trenches in silicon having a silicon oxide and/or silicon nitride hardmask. In a first step, an etch composition of HBr and oxygen is used, depositing a passivation layer on the sidewalls and producing slightly tapered openings. In the second step, an etch composition of a fluorine-containing gas such as SF.sub.6, HBr and oxygen is used, producing more vertical openings at a high etch rate. The taper of the openings during the second step can be controlled by adjusting the relative amount of HBr or SF.sub.6 employed. This process is a clean process that does not require cleaning of the etch chamber between etch steps.