Abstract: The present disclosure is directed to a metrology system having 3-dimensional sensors for thickness measurements of semiconductor elements, and methods for taking the thickness measurements. In an aspect, the 3-dimensional sensor may be a single or dual 3-dimensional profiler that may scan across the top and bottom surfaces of an element to obtain a thickness measurement. In another aspect, the method may be used to measure a gap between elements that have assembled together.

Abstract: The invention provides a material comprising (i) a crown ether of formula (I), (ii) a crown ether of formula (II), and/or (iii) a crown ether of formula (III), or a salt thereof, wherein each m independently is an integer from 1 to 8, p is an integer from 1 to 1000, each “” designates an optionally present bond and/or structure, each X is an optionally present substituent, each * independently represents —H, ?O, or a bond to a remainder of the material, provided that at least one * is a bond to the remainder of the material, and wherein the remainder of the material is bound via a sp3-sp3 carbon-carbon bond, a method of making the material, and a method of using the material.