Abstract: A terminal device reports first capability information to a network device, where the first capability information indicates that values of a maximum quantity of downlink MIMO layers supported by the terminal device on a first component carrier CC include a first maximum quantity M1 of downlink MIMO layers and a second maximum quantity M2 of downlink MIMO layers; and the terminal device receives first signaling sent by the network device, where the first signaling configures maximum MIMO layer quantity information corresponding to the first CC, and the maximum MIMO layer quantity information includes a first maximum quantity N1 of MIMO layers and a second maximum quantity N2 of MIMO layers.

Abstract: Embodiments of this application provide a scheduling request processing method and a terminal device. The scheduling request processing method includes: determining that a regular buffer status report, BSR, associated with a first logical channel is triggered and has not been canceled; determining that there is no uplink resource available to transmit data of the first logical channel, and a first timer of a terminal device is not running; and triggering a scheduling request, SR, wherein the first timer is configured to delay transmission of the SR.

Abstract: An indication method, including receiving, by first user equipment, a first message sent by second user equipment, where the first message includes information indicating that the second user equipment supports an evolved user equipment-to-network relay function, and receiving, by the first user equipment, a second message sent by a network device, where the second message includes information indicating that the network device supports an evolved user equipment-to-network relay, or the second message includes information indicating that a cell in which the network device sends the second message supports an evolved user equipment-to-network relay.

Abstract: Embodiments of the present disclosure provide a contrast enhanced ultrasound imaging method and an ultrasound imaging device. The method may include: determining a target imaging mode from preset imaging modes in response to the first instruction, where the preset imaging modes comprise a first contrast enhanced imaging mode and a second contrast enhanced imaging mode which have different frame rate; transmitting ultrasound waves to a target object and receiving ultrasound echoes returned from the target object according to the determined target imaging mode to obtain ultrasound echo signals; and generating a contrast enhanced image according to the ultrasound echo signals. An ultrasound imaging device is also be provided.

Abstract: Embodiments of the present disclosure provide a contrast enhanced ultrasound imaging method and an ultrasound imaging device. The method may include: determining a target imaging mode from preset imaging modes in response to the first instruction, where the preset imaging modes comprise a first contrast enhanced imaging mode and a second contrast enhanced imaging mode which have different frame rate; transmitting ultrasound waves to a target object and receiving ultrasound echoes returned from the target object according to the determined target imaging mode to obtain ultrasound echo signals; and generating a contrast enhanced image according to the ultrasound echo signals. An ultrasound imaging device is also provided.

Abstract: A method for enhancing the performance of pentacene organic field-effect transistor (OFET) using n-type semiconductor interlayer: an n-type semiconductor thin film was set between the insulating layer and the polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type semiconductor layer is 1˜200 nm. The induced electrons at the interface of n-type semiconductor and polymer electret lead to the reduction of the height of the hole-barrier formed at the interface of polymer and pentacene, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET, adjusting the height of hole barrier at the interface of polymer and pentacene to a reasonable scope by controlling the quantity of induced electrons in n-type semiconductor layer, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.

Abstract: Provided is a vacuum coating device, comprising a crucible (13), an induction heater (15) arranged on the outer side of the crucible (13); a flow distribution box connected to the top of the crucible (13) through a steam pipeline (16); a pressure regulating valve (18) and a diverter valve (19) sequentially arranged in a direction in which the steam pipeline (16) is in communication with the flow distribution box; a horizontal pressure stabilizing plate (20) arranged in the flow distribution box, a plurality of sub-nozzles (21) connected to the top of the flow distribution box; wherein a plurality of air flow distribution chambers are arranged in the diverter valve (19); a ratio of a total area of the air flow distribution chambers (Sdistribution) to an area of the steam pipeline (16) in the radial direction (Spipeline) is greater than or equal to 0.1, i.e.: Sdiversion/Spipeline?0.1.

Abstract: The present invention discloses a vacuum coating device, comprising: a crucible, an induction heater provided on the periphery of the crucible, a flow distribution box connected to the top of said crucible via a steam pipe, wherein said steam pipe is provided with a pressure regulating valve, said flow distribution box is provided inside with a horizontal pressure stabilizing plate, said flow distribution box is connected on the top with a nozzle, and a deflector being arranged above said nozzle along the emitting direction of the steam. Wherein a distance Da from nozzle outlet to steel plate is 10˜200 mm, a height Db of said deflector is 10˜199 mm; a distance Dc from top of said deflector to steel plate is 1˜190 mm; an angle Dd between said deflector and said nozzle outlet is 60°˜135°. The vacuum coating device in the present invention can improve the yield of the coating, and also can form a uniform coating with consistent thickness.

Abstract: A medical device including stabilizing members and a delivery system including the same are described herein. The medical device includes a device body and the stabilizing members coupled thereto. Each stabilizing member has a backing portion coupled to the device body and an engagement portion extending from an outward face of the backing portion. The engagement portion is configured to extend radially outward from the device body. The medical device also includes one or more features configured to control at least one of tissue penetration depth of the at least one engagement portion, extension of the stabilizing member from the device body, and tissue engagement of the at least one engagement portion. The delivery system includes the medical device and a delivery sheath configured to retain and recapture the medical device during deployment to a target site.

Abstract: A method for enhancing the performance of pentacene organic field-effect transistor (OFET) using n-type semiconductor interlayer: an n-type semiconductor thin film was set between the insulating layer and the polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type semiconductor layer is 1˜200 nm. The induced electrons at the interface of n-type semiconductor and polymer electret lead to the reduction of the height of the hole-barrier formed at the interface of polymer and pentacene, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET, adjusting the height of hole barrier at the interface of polymer and pentacene to a reasonable scope by controlling the quantity of induced electrons in n-type semiconductor layer, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.

Abstract: A method for enhancing the performance of pentacene organic field-effect transistor (OFET): an n-type semiconductor thin film was set as a buffer layer between pentacene and polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type organic buffer layer is 1˜100 nm. The induced electrons at the interface lead to the reduction of the height of the hole-barrier formed at the interface, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET. The widened distribution region of positive space charges caused by ionized donors in n-type organic buffer layer effectively restricts the back-transfer of holes from polymer to pentacene, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.

Abstract: Embodiments of the present disclosure provide a contrast enhanced ultrasound imaging method and an ultrasound imaging device. The method may include: determining a target imaging mode from preset imaging modes in response to the first instruction, where the preset imaging modes comprise a first contrast enhanced imaging mode and a second contrast enhanced imaging mode which have different frame rate; transmitting ultrasound waves to a target object and receiving ultrasound echoes returned from the target object according to the determined target imaging mode to obtain ultrasound echo signals; and generating a contrast enhanced image according to the ultrasound echo signals. An ultrasound imaging device is also be provided.