Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: A method of fabricating an electronic apparatus having an active region and a peripheral region surrounding the active region is described. A first main device and a second main device are provided. An optical clear liquid adhesive (OCLA) is applied between the first main device and the second main device and within the active region. A photo-mask having a transparent region and an opaque region is provided above the second main device, and the transparent region corresponds to the peripheral region. An OCLA diffusion process is performed such that the OCLA diffuses from the active region to the peripheral region. During the OCLA diffusion process, a first irradiating process with the photo-mask is performed, such that the OCLA diffusing to the peripheral region is partially cured. After removing the photo-mask, a second irradiating process is performed, such that the OCLA is completely cured.

Abstract: A method of fabricating an electronic apparatus having an active region and a peripheral region surrounding the active region is described. A first main device and a second main device are provided. An optical clear liquid adhesive (OCLA) is applied between the first main device and the second main device and within the active region. A photo-mask having a transparent region and an opaque region is provided above the second main device, and the transparent region corresponds to the peripheral region. An OCLA diffusion process is performed such that the OCLA diffuses from the active region to the peripheral region. During the OCLA diffusion process, a first irradiating process with the photo-mask is performed, such that the OCLA diffusing to the peripheral region is partially cured. After removing the photo-mask, a second irradiating process is performed, such that the OCLA is completely cured.

Abstract: A method of fabricating an electronic apparatus having an active region and a peripheral region surrounding the active region is described. A first main device and a second main device are provided. An optical clear liquid adhesive (OCLA) is applied between the first main device and the second main device and within the active region. A photo-mask having a transparent region and an opaque region is provided above the second main device, and the transparent region corresponds to the peripheral region. An OCLA diffusion process is performed such that the OCLA diffuses from the active region to the peripheral region. During the OCLA diffusion process, a first irradiating process with the photo-mask is performed, such that the OCLA diffusing to the peripheral region is partially cured. After removing the photo-mask, a second irradiating process is performed, such that the OCLA is completely cured.

Abstract: A bending device used in a spring forming machine is disclosed to include a vertical rail at the machine frame, an upper slide and a lower slide respectively driven by a respective power source to move along the vertical rail relative each other, an oblique upper holder and an oblique lower holder respectively affixed to the upper slide and the lower slide, and an upper push member and a lower push member respectively driven by a respective power source to move along the oblique upper holder and the oblique lower holder for bending a metal strip into a coiled spring.

Abstract: A spring forming machine includes a machine frame, a movable member, and a driving mechanism. The driving mechanism comprises a slide plate seat, a slide plate and a cam wheel. When fitting an eccentric pin unit and a filler within a horizontal slide slot in the slide plate, the slide plate seat rotates on the machine frame, and the slide plate moves on the slide plate seat so as to move the movable member along an elliptical path upon actuation. When locking the slide plate seat and removing the filler, the cam wheel moves the eccentric pin unit so as to move the slide plate on the slide plate seat and thus to move the movable member along a straight path upon actuation. When locking the slide plate seat and removing the eccentric pin unit and the filler, a follower shaft can be mounted removably on the slide plate in contact with the cam wheel to permit a straight movement of the movable member on the machine frame upon actuation.