Abstract: In some embodiments, the present disclosure relates to a memory device including a semiconductor substrate, a first electrode disposed over the semiconductor substrate, a ferroelectric layer disposed between the first electrode and the semiconductor substrate, and a first stressor layer separating the first electrode from the ferroelectric layer. The first stressor layer has a coefficient of thermal expansion greater than that of the ferroelectric layer.

Abstract: Ferroelectric stacks are disclosed herein that can improve retention performance of ferroelectric memory devices. An exemplary ferroelectric stack has a ferroelectric switching layer (FSL) stack disposed between a first electrode and a second electrode. The ferroelectric stack includes a barrier layer disposed between a first FSL and a second FSL, where a first crystalline condition of the barrier layer is different than a second crystalline condition of the first FSL and/or the second FSL. In some embodiments, the first crystalline condition is an amorphous phase, and the second crystalline condition is an orthorhombic phase. In some embodiments, the first FSL and/or the second FSL include a first metal oxide, and the barrier layer includes a second metal oxide. The ferroelectric stack can be a ferroelectric capacitor, a portion of a transistor, and/or connected to a transistor in a ferroelectric memory device to provide data storage in a non-volatile manner.

Abstract: An expansion card frame assembly is configured to support a riser card and an expansion card. The expansion card frame assembly includes a frame, a pivotable component and a stopper. The frame is configured to support the riser card, and the expansion card is configured to be inserted into the riser card. The pivotable component is pivotably disposed on the frame and configured to be located aside the expansion card. The stopper is movably disposed on the pivotable component and configured to be located at one side of the expansion card which is located farther away from the riser card.

Abstract: Ferroelectric stacks are disclosed herein that can improve retention performance of ferroelectric memory devices. An exemplary ferroelectric stack has a ferroelectric switching layer (FSL) stack disposed between a first electrode and a second electrode. The ferroelectric stack includes a barrier layer disposed between a first FSL and a second FSL, where a first crystalline condition of the barrier layer is different than a second crystalline condition of the first FSL and/or the second FSL. In some embodiments, the first crystalline condition is an amorphous phase, and the second crystalline condition is an orthorhombic phase. In some embodiments, the first FSL and/or the second FSL include a first metal oxide, and the barrier layer includes a second metal oxide. The ferroelectric stack can be a ferroelectric capacitor, a portion of a transistor, and/or connected to a transistor in a ferroelectric memory device to provide data storage in a non-volatile manner.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode disposed over a substrate and a top electrode disposed over the bottom electrode. A ferroelectric switching layer and a first seed layer are arranged between the bottom electrode and the top electrode. A second seed layer continuously extends between a lower surface physically contacting the ferroelectric switching layer and an upper surface physically contacting the top electrode. The first seed layer, the second seed layer, and the ferroelectric switching layer include non-monoclinic crystal phases.

Abstract: The present invention relates to a fluorescent polymer cast on the surface of wells of a plate and a plate comprising the fluorescent polymer. The plate is used in a method for calibrating read-out values of plate readers. The method for calibrating the plate readers can effectively reduce the deviation of read-out values among different plate readers.

Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip. The method includes forming a bottom electrode layer over a substrate and forming a seed layer over the bottom electrode layer. A ferroelectric switching layer is formed over the bottom electrode layer and to contact the seed layer. The ferroelectric switching layer is formed to have a first region with a first crystal phase and a second region with a different crystal phase. A top electrode layer is formed over the ferroelectric switching layer. One or more patterning processes are performed on the bottom electrode layer, the seed layer, the ferroelectric switching layer, and the top electrode layer to form a ferroelectric random access memory (FeRAM) device.

Abstract: Disclosed are systems for applying materials to components. The system comprises a tool operable for transferring a portion of a material from a supply of the material to a component. A first portion of the tool may be configured for cutting along a side or edge of the portion of the material. A second portion of the tool may be configured for tamping, pressing, or pushing against the portion of the material to cause uncut sides or edges of the portion of the material attached to the supply of the material to be torn, severed, detached, or separated from the supply of the material.

Abstract: An electrically and thermally conductive gasket includes a resilient core including a plurality of sides, a heat spreader disposed along at least two sides of the plurality of sides of the resilient core, and an electrically conductive layer disposed along and/or covering at least a portion of the heat spreader, such that the portion of the heat spreader is between the resilient core and the electrically conductive layer. The gasket is positionable and/or compressible between first and second surfaces to thereby define an electrically conductive path and a thermally conductive path between the first and second surfaces.

Abstract: Disclosed are systems for applying materials to components. The system comprises a tool operable for transferring a portion of a material from a supply of the material to a component. A first portion of the tool may be configured for cutting along a side or edge of the portion of the material. A second portion of the tool may be configured for tamping, pressing, or pushing against the portion of the material to cause uncut sides or edges of the portion of the material attached to the supply of the material to be torn, severed, detached, or separated from the supply of the material.

Abstract: Disclosed are systems for applying materials to components. The system comprises a tool operable for transferring a portion of a material from a supply of the material to a component. A first portion of the tool may be configured for cutting along a side or edge of the portion of the material. A second portion of the tool may be configured for tamping, pressing, or pushing against the portion of the material to cause uncut sides or edges of the portion of the material attached to the supply of the material to be torn, severed, detached, or separated from the supply of the material.

Abstract: According to various aspects, exemplary embodiments are disclosed of shields (e.g., board level shields, etc.). In an exemplary embodiment, a shield generally includes one or more sidewalls. An upper portion of the one or more sidewalls define an opening having a perimeter. A lower portion of the one or more sidewalls is configured for installation to a substrate generally about one or more components on the substrate. An electrically-conductive material is disposed along the upper portion of the one or more sidewalls and around the perimeter of the opening. The electrically-conductive material is configured to establish an electrically-conductive pathway between the one or more sidewalls and a device housing when a portion of the device housing is positioned over the opening.

Abstract: Disclosed are systems for applying materials to components. The system comprises a tool operable for transferring a portion of a material from a supply of the material to a component. A first portion of the tool may be configured for cutting along a side or edge of the portion of the material. A second portion of the tool may be configured for tamping, pressing, or pushing against the portion of the material to cause uncut sides or edges of the portion of the material attached to the supply of the material to be torn, severed, detached, or separated from the supply of the material.

Abstract: According to various aspects, exemplary embodiments are disclosed of shielding apparatus or assemblies including electrically-conductive foam. Also disclosed are exemplary embodiments of methods relating to making shielding apparatus or assemblies including electrically-conductive foam. Additionally, exemplary embodiments are disclosed of methods relating to providing shielding for one or more components on a substrate.

Abstract: According to various aspects, exemplary embodiments are disclosed of shielding apparatus or assemblies including electrically-conductive foam frames and covers or lids attachable to the frames. Also disclosed are exemplary embodiments of electrically-conductive foam frames for shielding apparatus or assemblies. Further, exemplary embodiments are disclosed of methods relating to making shielding apparatus or assemblies including electrically-conductive foam frames. Additionally, exemplary embodiments are disclosed of methods relating to providing shielding for one or more components on a substrate.

Abstract: According to various aspects, exemplary embodiments are disclosed of shielding apparatus or assemblies including electrically-conductive foam frames and covers or lids attachable to the frames. Also disclosed are exemplary embodiments of electrically-conductive foam frames for shielding apparatus or assemblies. Further, exemplary embodiments are disclosed of methods relating to making shielding apparatus or assemblies including electrically-conductive foam frames. Additionally, exemplary embodiments are disclosed of methods relating to providing shielding for one or more components on a substrate.

Abstract: A contact suitable for circuit grounding of surface mount technology devices generally includes a resilient core member, a solderable electrically conductive layer, and an adhesive bonding the solderable electrically conductive layer to the resilient core member. The adhesive has no more than a maximum of 900 parts per million chlorine, no more than a maximum of 900 parts per million bromine, and no more than a maximum of 1,500 parts per million total halogens.

Abstract: A metallized film-over-foam contact suitable for circuit grounding of surface mount technology devices generally includes a silicone foam resilient core member, a solderable electrically conductive layer, and an adhesive bonding the solderable electrically conductive layer to the resilient core member. The adhesive has no more than a maximum of 900 parts per million chlorine, no more than a maximum of 900 parts per million bromine, and no more than a maximum of 1,500 parts per million total halogens.

Abstract: A metallized film-over-foam contact suitable for circuit grounding of surface mount technology devices generally includes a silicone foam resilient core member, a solderable electrically conductive layer, and an adhesive bonding the solderable electrically conductive layer to the resilient core member. The adhesive has no more than a maximum of 900 parts per million chlorine, no more than a maximum of 900 parts per million bromine, and no more than a maximum of 1,500 parts per million total halogens.

Abstract: A computer system is provided comprising a non-volatile storage medium and a processor. The processor acquires authentication information from a first removable storage device, stores the authentication information into the non-volatile storage medium, and forbids data access of the computer system when detecting that a second removable storage device has been inserted and identification data of the second removable storage device is different from the authentication information.