Abstract: The present disclosure describes a method that includes forming a fin protruding from a substrate, the fin including a first sidewall and a second sidewall formed opposite to the first sidewall. The method also includes depositing a shallow-trench isolation (STI) material on the substrate. Depositing the STI material includes depositing a first portion of the STI material in contact with the first sidewall and depositing a second portion of the STI material in contact with the second sidewall. The method also includes performing a first etching process on the STI material to etch the first portion of the STI material at a first etching rate and the second portion of the STI material at a second etching rate greater than the first etching rate. The method also includes performing a second etching process on the STI material to etch the first portion of the STI material at a third etching rate and the second portion of the STI material at a fourth etching rate less than the third etching rate.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, an active region on the substrate, and a gate structure, a source conductor, and a drain conductor disposed on the active region. The semiconductor device further comprises a first type doped region of the active region below the gate structure and a second type doped region of the active region adjacent to the first type doped region, and the first type doped region is different from the second type doped region. The second type doped region is configured to function as a resistor.

Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.

Abstract: A method includes forming a first multilayer interconnect structure over a first side of a device layer, forming a first portion of a second multilayer interconnect structure under a second side of the device layer, forming a trench that extends through the second dielectric layer, the device layer, and the first dielectric layer, forming a conductive structure in the trench, and forming a second portion of the second multilayer interconnect structure under the first portion of the second multilayer interconnect structure. The second portion of the second multilayer interconnect structure includes patterned metal layers disposed in a third dielectric layer, and wherein one or more of the patterned metal layers are in electrical connection with the conductive structure.

Abstract: An impact resistant external casing is provided to enclose a canister containing a multi-layered chemical bed, with by-passes in each layer to accommodate the flow across and through the bed of exhaled breath which reacts with potassium superoxide in tablet form, the casing being provided with a (top) lid section which contains a mouthpiece, breathing hoses, and neck straps, the opposite side of the casing being provided with a bottom cover which accommodates the storage of a folded breathing bag and chest straps. An air passageway constituting an annular section is provided to accommodate a chimney extending from the bag through the passageway section between the casing and the canister, which is open to ambient air for cooling purposes. The inside bottom portion of the canister is provided with a trammel to prevent escape of deliquesced KO.sub.

Abstract: A cannister has an inhalation chimney mounted thereon, and includes an inlet and an outlet. Several layers of KO.sub.2 particles are contained in the cannister, separated by parallel screen assemblies, the upper two screen assemblies being connected by a vertical bypass screen near the cannister inlet. The layered KO.sub.2 bed is effective to remove CO.sub.2 from exhaled breathe, and generate oxygen for recharging the air prior to inhalation. The cannister inlet is connected by a flexible hose to the exhalation side of a breather mouthpiece, the inhalation side of the mouthpiece being connected to the upper end of the inhalation chimney. Communication between the cannister outlet and the lower end of the inhalation chimney is provided by a breather bag, fitted with a set of baffles to define a tortuous flow path for cooling the processed air. A collector mounted at the cannister outlet prevents liquid KO.sub.2 from entering the breather bag.