Abstract: An optical waveguide detector is provided, which includes: a silicon waveguide layer and a germanium waveguide layer. The germanium waveguide layer includes a first heavily germanium-doped area and a germanium-undoped area. A first surface of the germanium waveguide layer includes a surface of the first heavily germanium-doped area, and the first surface is a surface of the germanium waveguide layer away from the silicon waveguide layer in the first direction. A width of the first heavily germanium-doped area is less than or equal to half a width of the first surface, and a thickness of the first heavily germanium-doped area is greater than or equal to 5 nm and less than or equal to 200 nm. According to embodiments, a bandwidth of the optical waveguide detector can be effectively increased.

Abstract: Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region.

Abstract: Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region.

Abstract: The present invention relates to computer science, molecular biology and microfluidics technique which provides a DNA molecular computer based on microfluidic chip. The objective is to provide a DNA molecular computer which uses the microfluidic chip as a operation platform, mainly including: using DNA molecules as operation media, using the microfluidic chip as the operation platform of a DNA molecular operator; using DNA molecules as storage media, using the microfluidic chip as the operation platform of a DNA molecular storage; using a electronic computer and a detector as the kernel of a controller; said microfluidic chip includes a DNA molecular computation region and a DNA molecular storage region. The microfluidic chip consists of digestion, ligation, PCR amplification and chip electrophoresis unit connected by microchannels in turn, and carries out the liquid control through micropumps and microvalves.