Abstract: This application discloses a computing system implementing a reliability verification tool to identify a portion of a layout design describing an integrated circuit includes a victim transistor having a gate connected to an aggressor transistor. The reliability verification tool can extract a resistance network for connections between the victim transistor and the aggressor transistor, and simulate the resistive network to determine connectivity between the wells of the victim transistor and the aggressor transistor occurs prior to the victim transistor having a gate connected to an aggressor transistor.

Abstract: An endoscope device includes a head tube having a front opening and a lateral opening, a front image capturing lens disposed in the head tube and facing the front opening, an optical fiber disposed in the head tube and located at one side of the front image capturing lens, a lateral image capturing lens disposed in the head tube and facing the lateral opening, and a lateral light source disposed in the head tube and arranged adjacent to the lateral image capturing lens. As such, the endoscope device of present invention uses the optical fiber to transmit lights to the front image capturing lens and uses the lateral light source to provide lights to the lateral image capturing lens, such that the overall volume can be effectively reduced and a high intensity lighting effect can be achieved, thereby improving image capture resolution and image recognition accuracy.

Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.

Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.

Abstract: An easy-to-assemble endoscope lens unit installed at a head tube of an insertion tube within an endoscope. The components of the endoscopic lens unit include a base having two extended holes, with each hole having an axis. The axes of the two extended holes being substantially parallel to one another, and each extended hole having an axis length that is greater than its radius length. The endoscopic lens unit further includes a camera lens, accommodated in one of the extended holes, with a front portion of the camera lens exposed at the base. Additionally, a projection lens is accommodated in the other extended hole, with the front portion of the projection lens also exposed at the base. The projection lens is used to project a projectile and display a predetermined pattern onto the projectile. An adhesive is applied to the base and at least one of the camera and projection lenses.

Abstract: A plug fixing structure is applied to fixing a power plug inserted into a power socket of an electronic device. The power plug has a plug portion and a main body portion. A first engaging structure is formed on an outer periphery of the power socket. The plug fixing structure includes a sleeve casing jacketing the main body portion to expose the plug portion and a first resilient arm having a first arm portion and a first front hook. The first arm portion protrudes from an outer surface of the sleeve casing. The first front hook extends from the first arm portion toward the first engaging structure. The first front hook is engaged with the first engaging structure when the plug portion is inserted into the power socket along a first axis, so as to constrain movement of the power plug along the first axis relative to the power socket.

Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.

Abstract: A plug fixing structure is applied to fixing a power plug inserted into a power socket of an electronic device. The power plug has a plug portion and a main body portion. A first engaging structure is formed on an outer periphery of the power socket. The plug fixing structure includes a sleeve casing jacketing the main body portion to expose the plug portion and a first resilient arm having a first arm portion and a first front hook. The first arm portion protrudes from an outer surface of the sleeve casing. The first front hook extends from the first arm portion toward the first engaging structure. The first front hook is engaged with the first engaging structure when the plug portion is inserted into the power socket along a first axis, so as to constrain movement of the power plug along the first axis relative to the power socket.

Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.

Abstract: An electronic device includes a socket and a casing. The socket includes a first connecting structure and a second connecting structure. The casing includes a first side wall and a second side wall, wherein the first side wall is essentially perpendicular to the second side wall. The first side wall includes a third connecting structure and the second side wall includes a fourth connecting structure. The first connecting structure is connected to the third connecting structure along a first connecting axis and the second connecting structure is connected to the fourth connecting structure along a second connecting axis, such that the socket is fixed on the casing, wherein the first connecting axis is essentially perpendicular to the second connecting axis.

Abstract: Probe location candidates for parasitic extraction are identified from geometric elements on a probe layer. The probe layer is a physical layer of a layout design for a circuit design predetermined for placing one or more new probes. The probe location candidates are geometric elements on the probe layer within a boundary of an area having a predetermined size and covering an original probe location or having a distance from the original probe location less than a predetermined value. Moreover, the probe location candidates are conductively connected to the original probe location. One or more new probe locations on the probe location candidates are selected based on predetermined criteria. From the layout design, a parasitic resistance value for parasitic resistance between a geometric element representing a circuit pad or another device pin and the new one or more probe locations is extracted.

Abstract: Probe location candidates for parasitic extraction are identified from geometric elements on a probe layer. The probe layer is a physical layer of a layout design for a circuit design predetermined for placing one or more new probes. The probe location candidates are geometric elements on the probe layer within a boundary of an area having a predetermined size and covering an original probe location or having a distance from the original probe location less than a predetermined value. Moreover, the probe location candidates are conductively connected to the original probe location. One or more new probe locations on the probe location candidates are selected based on predetermined criteria. From the layout design, a parasitic resistance value for parasitic resistance between a geometric element representing a circuit pad or another device pin and the new one or more probe locations is extracted.

Abstract: The present disclosure features, a kit, including a first compartment including a volatile fluorinated compound dissolved in a C1-6 alcohol; and a second compartment including water. When the contents of the first and second compartments are mixed, spontaneous nucleation of nanodroplets of the volatile fluorinated compound can form in the aqueous phase to provide a dispersion of nanodroplets in the aqueous phase. The nanodroplets can be used to generate nanobubbles or microbubbles in ultrasound imaging.

Abstract: A cannula assembly including a camera system to help provide multiple viewing angles of a surgical site. This added visualization provides the surgeon with more comprehensive feedback during the surgical procedure, leading to better patient outcome and a reduction in the surgical failure rate. The cannula has a main lumen and a smaller secondary lumen and is insertable into the surgical site for easy surgeon adaptation. The camera is coupled to the secondary lumen toward the side of the cannula. This allows the camera to provide visualization without obstructing the main lumen for the use of tools. The camera wiring runs through a long tube connected to the camera and through a handle at the end of the tube without blocking access to the surgical site.

Abstract: Aspects of the disclosed technology relate to techniques of connectivity-aware reduction of layout data. With various implementations of the disclosed technology, circuit elements of interest are selected in a circuit design which includes netlist information and layout data. Based at least on pins for the circuit elements of interest, the circuit elements of interest, or both, nets of interest are determined. Cells of interest, comprising cells that are identified based at least on pins for the circuit elements of interest, the circuit elements of interest, or both, are then determined. Based on the nets of interest and the cells of interest, layout geometric elements are selected and may be analyzed for design verification. For electrostatic discharge (ESD) protection verification, the cells of interest may further comprise cells that include portions of power supply grids on top metal layers.

Abstract: A manufacturing method of a semiconductor device comprises the steps of: providing a transparent substrate; forming a gate electrode on the transparent substrate; forming a gate insulation layer covering the gate electrode; forming an oxide semiconductor layer on the gate insulation layer and at least partially over the gate electrode; forming an etching stop layer over the gate electrode and at least covering a part of the oxide semiconductor layer, wherein the etching stop layer includes an opening; forming an electrode layer at the opening and on a part of the etching stop layer; and applying a low-resistance treatment to a part of the oxide semiconductor layer uncovered by the etching stop layer and the electrode layer to form a pixel electrode.

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises the steps of: providing a transparent substrate having a visible region and an invisible region; forming a gate and at least an alignment mark coplanarly on the transparent substrate, wherein the gate is located in the visible region and the alignment mark is located in the invisible region; forming a gate insulation layer to cover the gate and cover the alignment mark; forming an oxide semiconductor layer on the gate insulation layer above the gate; and forming an etching stop layer above the gate and the alignment mark.

Abstract: A manufacturing method of a semiconductor device comprises the steps of: providing a transparent substrate; forming a gate electrode on the transparent substrate; forming a gate insulation layer covering the gate electrode; forming an oxide semiconductor layer on the gate insulation layer and at least partially over the gate electrode; forming an etching stop layer over the gate electrode and at least covering a part of the oxide semiconductor layer, wherein the etching stop layer includes an opening; forming an electrode layer at the opening and on a part of the etching stop layer; and applying a low-resistance treatment to a part of the oxide semiconductor layer uncovered by the etching stop layer and the electrode layer to form a pixel electrode.

Abstract: A manufacturing method of a semiconductor device comprises the steps of: providing a transparent substrate; forming a gate electrode on the transparent substrate; forming a gate insulation layer covering the gate electrode; forming an oxide semiconductor layer on the gate insulation layer and at least partially over the gate electrode; forming an etching stop layer over the gate electrode and at least covering a part of the oxide semiconductor layer, wherein the etching stop layer includes an opening; forming an electrode layer at the opening and on a part of the etching stop layer; and applying a low-resistance treatment to a part of the oxide semiconductor layer uncovered by the etching stop layer and the electrode layer to form a pixel electrode.

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises the steps of: providing a transparent substrate having a visible region and an invisible region; forming a gate and at least an alignment mark coplanarly on the transparent substrate, wherein the gate is located in the visible region and the alignment mark is located in the invisible region; forming a gate insulation layer to cover the gate and cover the alignment mark; forming an oxide semiconductor layer on the gate insulation layer above the gate; and forming an etching stop layer above the gate and the alignment mark.