Abstract: Some implementations described herein include operating components in a lithography system at variable speeds to reduce, minimize, and/or prevent particle generation due to rubbing of or collision between contact parts of the components. In some implementations, a component in a path of transfer of a semiconductor substrate in the lithography system is operated at a relatively high movement speed through a first portion of an actuation operation, and is operated at a reduced movement speed (e.g., a movement speed that is less than the high movement speed) through a second portion of the actuation operation in which contact parts of the component are to interact. The reduced movement speed reduces the likelihood of particle generation and/or release from the contact parts when the contact parts interact, while the high movement speed provides a high semiconductor substrate throughput in the lithography system.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a first conductive material and a second conductive material disposed over the semiconductor substrate and the first dielectric layer. The semiconductor device structure further includes a second dielectric layer surrounding the first conductive material and the second conductive material and an insulating structure over the semiconductor substrate. The insulating structure is disposed between the first conductive material and the second conductive material. The insulating structure comprises a material different from the first dielectric layer and the second dielectric layer.

Abstract: A thin film transistor includes a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer has a first heavily doped region, a second heavily doped region, a third heavily doped region, an intrinsic region and a lightly doped region. The gate shields the intrinsic region and a first portion of the first heavily doped region. A second portion of the first heavily doped region is located outside an area of the gate. The source and the drain are electrically connected to the second heavily doped region and the third heavily doped region respectively. The source and the drain are arranged in a first direction. The first portion of the first heavily doped region and the gate have an overlapping region. A length of the overlapping region in the first direction is greater than a length of the intrinsic region in the first direction.

Abstract: A method for manufacturing a magnet-conductive device includes performing a punch process to a plate by a glue-injectable punch structure, wherein the glue-injectable punch structure includes a punch head and a control member. The punch head comprises an accommodating cavity, an injection hole and an inlet, and a supply channel is formed by the accommodating cavity, the injection hole and the inlet. The control member selectively obstructs the supply channel or permits the supply channel into conduction. By using the method for manufacturing the magnet-conductive device, the stack between plural plates is simplified, and the coupling strength between adjacent plates is enhanced. In addition, this invention considers the gel between adjacent plates to be insulating medium to lower the iron loss of the magnet-conductive plates.

Abstract: A method for manufacturing a magnet-conductive device includes performing a punch process to a plate by a glue-injectable punch structure, wherein the glue-injectable punch structure includes a punch head and a control member. The punch head comprises an accommodating cavity, an injection hole and an inlet, and a supply channel is formed by the accommodating cavity, the injection hole and the inlet. The control member selectively obstructs the supply channel or permits the supply channel into conduction. By using the method for manufacturing the magnet-conductive device, the stack between plural plates is simplified, and the coupling strength between adjacent plates is enhanced. In addition, this invention considers the gel between adjacent plates to be insulating medium to lower the iron loss of the magnet-conductive plates.

Abstract: The present invention relates to a foldable honeycomb structure and method for making the same. The method comprises (a) providing a plurality of flat strips; (b) forming a pair of longitudinal creases in each strip thereby defining the first two longitudinal margins of each strip and a central portion of each strip between the creases; (c) folding each strip along said creases so that each folded strip has two exposed outside surfaces; (d) applying at least three longitudinal glue lines to the exposed outside surface of each folded strip; and (e) stacking the glued strips. As a result, it need not open the longitudinal margins during the process of applying the longitudinal glue lines, which can avoid the deformation of the strip and have a precise gluing position.

Abstract: The present invention relates to a foldable honeycomb structure and method for making the same. The method comprises (a) providing a plurality of flat strips; (b) forming a pair of longitudinal creases in each strip thereby defining the first two longitudinal margins of each strip and a central portion of each strip between the creases; (c) folding each strip along said creases so that each folded strip has two exposed outside surfaces; (d) applying at least three longitudinal glue lines to the exposed outside surface of each folded strip; and (e) stacking the glued strips. As a result, it need not open the longitudinal margins during the process of applying the longitudinal glue lines, which can avoid the deformation of the strip and have a precise gluing position.