Patents by Inventor Yiwen FAN

Yiwen FAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11935758
    Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: March 19, 2024
    Assignee: Lam Research Corporation
    Inventors: Wenbing Yang, Mohand Brouri, Samantha SiamHwa Tan, Shih-Ked Lee, Yiwen Fan, Wook Choi, Tamal Mukherjee, Ran Lin, Yang Pan
  • Publication number: 20240021435
    Abstract: A method for etching a metal containing material is provided. The metal containing material is exposed to a halogen containing fluid or plasma to convert at least some of the metal containing material into a metal halide material. The metal halide material is exposed to a ligand containing fluid or plasma, wherein at least some of the metal halide material is formed into a metal halide ligand complex. At least some of the metal halide ligand complex is vaporized.
    Type: Application
    Filed: December 6, 2021
    Publication date: January 18, 2024
    Inventors: Yiwen FAN, Wenbing YANG, Ran LIN, Samantha SiamHwa TAN, Timothy William WEIDMAN, Tamal MUKHERJEE
  • Publication number: 20230230819
    Abstract: A method for cleaning a plasma processing chamber comprising one or more cycles is provided. Each cycle comprises performing an oxygen containing plasma cleaning phase, performing a volatile chemistry type residue cleaning phase, and performing a fluorine containing plasma cleaning phase.
    Type: Application
    Filed: June 8, 2021
    Publication date: July 20, 2023
    Inventors: Ran LIN, Wenbing YANG, Tamal MUKHERJEE, Jengyi YU, Samantha SiamHwa TAN, Yang PAN, Yiwen FAN
  • Patent number: 11692559
    Abstract: The invention discloses a micro hydraulic suspension mechanical pump structure and an assembling method thereof. The hydraulic suspension micro pump includes a volute, an upper end cap, a positioning sheet, an impeller, a hollow cup motor, a waterproof cover, and a rotor. The hollow cup motor includes a motor casing, a motor bottom cap, a magnet rotor, a coil, and an iron core. The waterproof cover is in a separated state from the motor, and a lower part has a positioning boss to implement radial cooperation with a recess at a corresponding position of the motor. At the same time, there is the sheet between the recess and the boss to implement axial positioning of the waterproof cover.
    Type: Grant
    Filed: October 24, 2022
    Date of Patent: July 4, 2023
    Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Xiaobing Luo, Guanying Xing, Hao Zou, Tao Hong, Yiwen Fan, Weiwei Liao, Song Xue
  • Publication number: 20230126883
    Abstract: The invention discloses a micro hydraulic suspension mechanical pump structure and an assembling method thereof. The hydraulic suspension micro pump includes a volute, an upper end cap, a positioning sheet, an impeller, a hollow cup motor, a waterproof cover, and a rotor. The hollow cup motor includes a motor casing, a motor bottom cap, a magnet rotor, a coil, and an iron core. The waterproof cover is in a separated state from the motor, and a lower part has a positioning boss to implement radial cooperation with a recess at a corresponding position of the motor. At the same time, there is the sheet between the recess and the boss to implement axial positioning of the waterproof cover.
    Type: Application
    Filed: October 24, 2022
    Publication date: April 27, 2023
    Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Xiaobing LUO, Guanying Xing, Hao Zou, Tao Hong, Yiwen Fan, Weiwei Liao, Song Xue
  • Publication number: 20220376174
    Abstract: A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a surface of the substrate and form a modified surface.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 24, 2022
    Inventors: Wenbing YANG, Tamal MUKHERJEE, Zhongwei ZHU, Samantha SiamHwa TAN, Ran LIN, Yang PAN, Ziad EL OTELL, Yiwen FAN
  • Publication number: 20220244645
    Abstract: Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.
    Type: Application
    Filed: June 25, 2020
    Publication date: August 4, 2022
    Inventors: Samantha SiamHwa Tan, Jengyi Yu, Da Li, Yiwen Fan, Yang Pan, Jeffrey Marks, Richard A. Gottscho, Daniel Peter, Timothy William Weidman, Boris Volosskiy, Wenbing Yang
  • Publication number: 20220199422
    Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.
    Type: Application
    Filed: April 27, 2020
    Publication date: June 23, 2022
    Inventors: Wenbing YANG, Mohand BROURI, Samantha SiamHwa TAN, Shih-Ked LEE, Yiwen FAN, Wook CHOI, Tamal MUKHERJEE, Ran LIN, Yang PAN