Abstract: The present application discloses an optoelectronic device, including an anode, a hole transport layer disposed on the anode, a quantum dot light-emitting layer disposed on the hole transport layer, and a cathode disposed on the quantum dot light-emitting layer; the quantum dot light-emitting layer includes a quantum dot material in a core-shell structure, and a difference between a top energy level of a valence band of an outer shell layer material of the quantum dot material and that of a hole transport material in the hole transport layer is greater than or equal to 0.5 eV.

Abstract: An optoelectronic device, including an anode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode stacked in sequence; the quantum dot light-emitting layer includes a quantum dot material with a core-shell structure, and the difference between the valence band top energy level of the shell layer of the quantum dot material and the hole transport material is greater than or equal to 0.5 eV; the electron transport layer includes a zinc oxide nanomaterial, and an amine group/carboxyl ligand having a chain length of 3-8 carbon atoms is bonded to the surface of the zinc oxide nanomaterial.

Abstract: The present disclosure provides a quantum dot light-emitting diode, a manufacturing method thereof, and a quantum dot film. The quantum dot light-emitting diode includes a first electrode, a second electrode, and a quantum dot light-emitting layer. The quantum dot light-emitting layer is disposed between the first electrode and the second electrode. The quantum dot light-emitting layer includes a first quantum dot and a second quantum dot, and an absolute value of a difference between a photoluminescence peak wavelength of the first quantum dot and a photoluminescence peak wavelength of the second quantum dot is less than or equal to 10 nm.

Abstract: A photoelectric device, which includes an anode, a hole transport layer, a quantum dot light-emitting layer and a cathode arranged in sequence, the hole transport layer contains at least two hole transport materials, and the at least two hole transport materials includes a hole transport layer with an absolute value of a maximum energy level of valence band of the transport material being smaller than or equal to 5.3 eV, and a hole transport layer with an absolute value of a maximum energy level of valence band being greater than 5.3 eV.

Abstract: A quantum dot light emitting diode and a method for fabricating the same. The quantum dot light emitting diode includes: a substrate, a bottom electrode, a light-emitting function layer, and a top electrode. A functional layer is formed by the bottom electrode, the light-emitting function layer, and the top electrode; and an outer surface of the functional layer is provided with a first protective layer. The first protective layer is made from a fluoro-acrylate copolymer, which has hydrophobicity, good light transmittance, flexibility, and heat dissipation, and can effectively prevent moisture and oxygen from penetrating into an internal structure of the quantum dot light emitting diode, thereby having a good protection effect, and in the meanwhile, the quantum dot light emitting diode can dissipate heat timely, which is beneficial for the device to keep its performance, improve light-emitting efficiency, and the service life.

Abstract: A photoelectric device, which includes an anode, a first hole injection layer, a hole transport layer, a quantum dot light-emitting layer, and a cathode arranged in sequence, and an absolute value of a difference between a maximum energy level of valence band of a hole transport material in the hole transport layer and a work function of a first hole injection material in the first hole injection layer is smaller than or equal to 0.2 eV.

Abstract: Disclosed are display device and preparation method therefor. Display device includes red light sub pixel, green light sub pixel, and first blue light sub pixel. Red light sub pixel includes anode, hole functional layer, red quantum dot light-emitting layer, transition layer, electron transport layer, and cathode arranged sequentially in layers. Green light sub pixel includes anode, hole functional layer, green quantum dot light-emitting layer, transition layer, electron transport layer, and cathode arranged sequentially in layers. First blue light sub pixel includes anode, hole functional layer, blue light organic light-emitting material layer, transition layer, electron transport layer, and cathode arranged sequentially in layers. Material of transition layer includes aromatic compound with conjugate plane, material of electron transport layer includes metal oxide.

Abstract: Disclosed are a display device and a pixel lighting control method therefor. The display device comprises a plurality of pixels arranged in an array, each pixel comprises a red light sub-pixel, a green light sub-pixel, a first blue light sub-pixel and a second blue light sub-pixel arranged in an array. The display device further comprises: a starting module configured to start the first blue light sub-pixel to emit light when a target blue light brightness value is greater than a preset blue light brightness value, and start the second blue light sub-pixel to emit light when the target blue light brightness value is lower than the preset blue light brightness value. In this way, by selecting blue light quantum dot devices with different characteristics, both high luminous efficiency and long lifetime of the device can be realized without affecting the display effect of the full-color display device.

Abstract: The present application discloses a preparation method for quantum dots (QDs). The method includes providing initial QD cores, and mixing the initial QD cores with an organic carboxylic acid to bond the organic carboxylic acid to the surface of the initial QD cores; preparing a shell layer on the surface of the initial QD cores in a shell-growth reaction system containing an organic carboxylic acid; and mixing and heating the solution system, obtained after a completion of shell-layer growth reaction, with an organic amine, an organic phosphine, or a mixed solution of the organic amine and the organic phosphine.

Abstract: A preparation method for a metal oxide nanoparticle film and an electrical component, comprising: preparing a halogen ligand-containing metal oxide nanoparticle by performing heated alcoholysis of a metal halide in an organic alcohol; and employing a solution method on the halogen ligand-containing metal oxide nanoparticle to prepare a halogen ligand-containing metal oxide nanoparticle film. The halogen ligand-containing metal oxide nanoparticle is produced by means of performing the alcoholysis of the metal halide, then the halogen ligand-containing metal oxide nanoparticle is prepared into the film, and then a halogen is utilized once again in a passivation processing of the film, this not only further reduces defects on the surface of the metal oxide nanoparticle, but also further improves charge transfer between the metal oxide nanoparticle and an active functional layer and increases transfer efficiency, thus increasing component efficiency.

Abstract: A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The at least two structural units include a type A1 structural unit and a type A2 structural unit. The type A1 QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A2 QD structural unit has a gradient alloy composition structure with the energy level width decreasing along the radial direction toward the surface. The two types of QD structural units are arranged alternately along the radial direction, and the energy levels in adjacent QD structural units having gradient alloy composition structures are continuous.

Abstract: Disclosed is a preparation method for crosslinked nanoparticle film. The preparation method comprises: dispersing nanoparticles in a solvent and uniformly mixing same, so as to obtain a nanoparticle solution; and using the nanoparticle solution to prepare a nanoparticle thin film by means of a solution method, and introducing a gas combination to promote a crosslinking reaction, so as to obtain a crosslinked nanoparticle thin film. By introducing a gas combination during film formation of nanoparticles, the present disclosure promotes the crosslinking among particles, and thus increases the electrical coupling among particles, lowers the potential barrier of carrier transmission, and increases the carrier mobility, thereby greatly improving the electrical properties of the thin film.

Abstract: A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The QD composite material includes a type A3 QD structural unit and a type A4 QD structural unit. The type A3 QD structural units has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A4 QD structural unit has a homogeneous alloy composition structure. An inner part of the QD composite material includes one or more QD structural units having a gradient alloy composition structure, and energy levels in adjacent QD structural units having gradient alloy composition structures are continuous. The QD composite material includes one or more QD structural units having a homogeneous alloy composition structure in a region close to the surface.

Abstract: A quantum dot (QD) composite material includes at least three QD structural units arranged sequentially along a radial direction. Among the at least three QD structural units, each QD structural unit at a center of the QD composite material and each QD structural unit at a surface of the QD composite material have a gradient alloy composition structure with an energy level width increasing along the radial direction from the center to the surface, along the radial direction, energy levels of adjacent gradient alloy composition structures of the QD structure units are continuous. A QD structural unit located between the QD structural units at the center and the QD structural units at the surface have a homogeneous alloy composition structure.

Abstract: A preparation method of a light-emitting device includes forming a composite transition layer between a cathode and a quantum dot light-emitting layer and forming an anode on a surface of the quantum dot light-emitting layer away from the cathode. The composite transition layer includes a first transition layer, a second transition layer, and a third transition layer. The first transition layer is arranged on one side close to the cathode and includes a metal halide. The second transition layer is arranged on a surface of the first transition layer away from the cathode and includes a hydrogen halide. The third transition layer is arranged on a surface of the second transition layer away from the first transition layer and includes an ester compound.

Abstract: Disclosed is a preparation method for crosslinked nanoparticle film. The preparation method comprises: dispersing nanoparticles in a solvent and uniformly mixing same, so as to obtain a nanoparticle solution; and using the nanoparticle solution to prepare a nanoparticle thin film by means of a solution method, and introducing a gas combination to promote a crosslinking reaction, so as to obtain a crosslinked nanoparticle thin film. By introducing a gas combination during film formation of nanoparticles, the present disclosure promotes the crosslinking among particles, and thus increases the electrical coupling among particles, lowers the potential barrier of carrier transmission, and increases the carrier mobility, thereby greatly improving the electrical properties of the thin film.

Abstract: A quantum dot and its preparation method and application. The method includes the steps of forming a compound quantum dot core first, then adding a precursor of a metal element M2 to be alloyed into the reaction system containing the compound quantum dot core. The metal element M2 undergoes cation exchange with a metal element M1 in the existing compound quantum dot core, thereby forming a quantum dot with an alloy core. In this method, the distribution of alloyed components is not only adjusted by changing the feeding ratio of the metal elements and the non-metal elements, but also by a more real-time, more direct, and more precise adjustments through various reaction condition parameters of the actual reaction process, thereby achieving a more precise composition and energy level distribution control for alloyed quantum dots.

Abstract: A nanomaterial includes a ZnO nanocrystal and a surface ligand bonded to the ZnO nanocrystal. The surface ligand has a structure of R1, R2, and R3 are independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, or a hydrogen atom. R4 is selected from a hydrocarbon group having a carbon number of 5 to 60. A carbon number of the alkyl group ranges from 1 to 5. A carbon number of the alkoxy group ranges from 1 to 5. A carbon number of the hydroxyalkoxy group ranges from 1 to 5.

Abstract: A quantum dot alloy nanomaterial, a preparation method therefor, and a semiconductor device. The quantum dot alloy nanomaterial comprises N alloy nanostructured units arranged in sequence in a radial direction, wherein N is larger than or equal to 2. The alloy nanostructured units comprise type A1 and type A2. Type A1 or type A2 is a gradient alloy component structure in which energy level width increases or decreases from inside out in the radial direction, respectively. In quantum dot alloy nanomaterial, alloy nanostructured units of type A1 and type A2 are alternately distributed, and the energy levels of adjacent alloy nanostructured units are continuous. The quantum dot alloy nanomaterial not only achieves higher luminous efficiency, but satisfies comprehensive performance requirements of a QLED device and a corresponding display technology for quantum dot alloy nanomaterial, and is an ideal material applicable to QLED and display technology.

Abstract: The present application discloses a composite and its preparation method and application. The composite includes silica-coated quantum dots and graphene nanosheets on the surface of the silica-coated quantum dots; wherein the silica-coated quantum dots include quantum dots and silica layer coated on the surface of the quantum dots. And the graphene nanosheets and the silica layer is bonded by (O—)3Si—R1—NHCO—R3—CONH—R2—Si(O—)3 or (O—)3Si—R4—SCH2CH2—R5—Si(O—)3, R1, R2, R4, R5 are respectively selected from a group consisting of a hydrocarbyl or a hydrocarbyl derivative, R3 is selected from a hydrocarbyl, a hydrocarbyl derivative, an aryl or an aryl derivative. The composite can further improve the stability of quantum dots without affecting the inherent optical properties of quantum dots, thereby improving luminous efficiency.