Abstract: Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. The methods include treating a surface of a metal gate stack with a radical treatment. The radical treatment may be used to treat one or more layers or surfaces of layers in the metal gate stack. The radical treatment may be performed once or multiple times during the methods described herein. The radical treatment comprises flowing one or more of nitrogen radicals (N2*) and hydrogen radicals (H*) over the surface of the metal gate stack.

Abstract: The present invention discloses a copper-zinc-aluminum-iron single crystal alloy material having an ultra-large grain structure of 5-50 cm grade, obtained by annealing an as-cast alloy having a polycrystalline structure through a single phase region of 800-960° C. for 2-105 h, where the as-cast alloy includes, by weight percentage, 62-82% of copper, 6-29% of zinc, 5-12% of aluminum, and 2-5% of iron. In the present invention, the alloy compositions have an essential difference and are a copper-zinc-aluminum-iron quaternary alloy, and the iron element is an indispensable alloying element. The preparation process of the present invention is extremely simple and very easy to implement and has a very good application prospect.

Abstract: The present invention discloses a copper-zinc-aluminum-iron single crystal alloy material having an ultra-large grain structure of 5-50 cm grade, obtained by annealing an as-cast alloy having a polycrystalline structure through a single phase region of 800-960° C. for 2-105 h, where the as-cast alloy includes, by weight percentage, 62-82% of copper, 6-29% of zinc, 5-12% of aluminum, and 2-5% of iron. In the present invention, the alloy compositions have an essential difference and are a copper-zinc-aluminum-iron quaternary alloy, and the iron element is an indispensable alloying element. The preparation process of the present invention is extremely simple and very easy to implement and has a very good application prospect.