Patents by Inventor YIXIONG YANG

YIXIONG YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210098581
    Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-K dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).
    Type: Application
    Filed: September 28, 2020
    Publication date: April 1, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Yongjing Lin, Karla M. Bernal Ramos, Shih Chung Chen, Yixiong Yang, Lin Dong, Steven C.H. Hung, Srinivas Gandikota
  • Patent number: 10955150
    Abstract: A room air purifier comprises housing (9), air filter (100), RFID reader (143), RFID tag (120), and a wireless communication unit (142). A method is how to operating the room air purifier.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: March 23, 2021
    Assignee: SM Innovative Properties Company
    Inventors: Andrew R. Fox, Liang Cheng, Weilai Jiang, Yinghua Yang, Zhijun Yang, Jie Zhou, Yixiong Chen, Xiaodan Chen, Pan Liu, Ling Chen, Wenqian Tang, Liliang Liu
  • Publication number: 20200411373
    Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.
    Type: Application
    Filed: June 28, 2020
    Publication date: December 31, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yixiong Yang, Srinivas Gandikota, Steven C.H. Hung, Jacqueline S. Wrench, Yongjing Lin, Susmit Singha Roy, Wei V. Tang, Shih Chung Chen
  • Publication number: 20200381295
    Abstract: Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.
    Type: Application
    Filed: May 28, 2020
    Publication date: December 3, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Anqing Cui, Dien-Yeh Wu, Wei V. Tang, Yixiong Yang, Bo Wang
  • Publication number: 20200373200
    Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal, the metal cap comprising one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Srinivas Gandikota, Steven C.H. Hung, Srinivas D. Nemani, Yixiong Yang, Susmit Singha Roy, Nikolaos Bekiaris
  • Publication number: 20200373318
    Abstract: Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an ?-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Jacqueline S. Wrench, Yixiong Yang, Yong Wu, Wei V. Tang, Srinivas Gandikota, Yongjing Lin, Karla M. Barnal Ramos, Shih Chung Chen
  • Publication number: 20200373404
    Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-? dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yongjing Lin, Karla M. Bernal Ramos, Luping Li, Shih Chung Chen, Jacqueline S. Wrench, Yixiong Yang, Steven C.H. Hung, Srinivas Gandikota, Naomi Yoshida, Lin Dong
  • Patent number: 10755947
    Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: August 25, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Wenyu Zhang, Yixiong Yang, Mario D. Sanchez, Guoqiang Jian, Wei V. Tang, Paul F. Ma
  • Publication number: 20200243341
    Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.
    Type: Application
    Filed: March 30, 2020
    Publication date: July 30, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yong Wu, Wei V. Tang, Jianqiu Guo, Wenyi Liu, Yixiong Yang, Jacqueline S. Wrench, Mandyam Sriram, Srinivas Gandikota, Yumin He
  • Publication number: 20200199779
    Abstract: The present invention discloses a copper-zinc-aluminum-iron single crystal alloy material having an ultra-large grain structure of 5-50 cm grade, obtained by annealing an as-cast alloy having a polycrystalline structure through a single phase region of 800-960° C. for 2-105 h, where the as-cast alloy includes, by weight percentage, 62-82% of copper, 6-29% of zinc, 5-12% of aluminum, and 2-5% of iron. In the present invention, the alloy compositions have an essential difference and are a copper-zinc-aluminum-iron quaternary alloy, and the iron element is an indispensable alloying element. The preparation process of the present invention is extremely simple and very easy to implement and has a very good application prospect.
    Type: Application
    Filed: December 3, 2019
    Publication date: June 25, 2020
    Inventors: Shuiyuan YANG, Jixun ZHANG, Xinyu QING, Lipeng GUO, Cuiping WANG, Xingjun LIU, Jinbin ZHANG, Yixiong HUANG
  • Publication number: 20200176247
    Abstract: Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.
    Type: Application
    Filed: December 1, 2019
    Publication date: June 4, 2020
    Inventors: LUPING LI, SHIH CHUNG CHEN, KAZUYA DAITO, LIN DONG, ZHEBO CHEN, YIXIONG YANG, STEVEN HUNG
  • Patent number: 10665450
    Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.
    Type: Grant
    Filed: August 17, 2018
    Date of Patent: May 26, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yixiong Yang, Paul F. Ma, Wei V. Tang, Wenyu Zhang, Shih Chung Chen, Chen Han Lin, Chi-Chou Lin, Yi Xu, Yu Lei, Naomi Yoshida, Lin Dong, Siddarth Krishnan
  • Patent number: 10636705
    Abstract: The method of treating a film stack includes depositing a barrier film containing a metal into a via formed within a dielectric layer disposed on a substrate and depositing a metal contact on the barrier film within the via, where a void is located within the barrier film or between the barrier film and the metal contact. The method also includes exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400° C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yifei Wang, Kurtis Leschkies, Fei Wang, Xin Liu, Wei Tang, Yixiong Yang, Wenyi Liu, Ludovic Godet
  • Publication number: 20200111885
    Abstract: Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.
    Type: Application
    Filed: October 7, 2019
    Publication date: April 9, 2020
    Inventors: YONGJING LIN, SHIH CHUNG CHEN, NAOMI YOSHIDA, LIN DONG, LIQI WU, RONGJUN WANG, STEVEN HUNG, KARLA BERNAL RAMOS, YIXIONG YANG, WEI TANG, SANG-HO YU
  • Publication number: 20200063263
    Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.
    Type: Application
    Filed: August 23, 2019
    Publication date: February 27, 2020
    Inventors: Yixiong Yang, Wei V. Tang, Seshadri Ganguli, Sang Ho Yu, Feng Q. Liu, Jeffrey W. Anthis, David Thompson, Jacqueline S. Wrench, Naomi Yoshida
  • Publication number: 20190341268
    Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.
    Type: Application
    Filed: May 1, 2019
    Publication date: November 7, 2019
    Inventors: Wenyu Zhang, Yixiong Yang, Mario D. Sanchez, Guoqiang Jian, Wei Tang, Paul F. Ma
  • Publication number: 20190326120
    Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.
    Type: Application
    Filed: April 11, 2019
    Publication date: October 24, 2019
    Inventors: Guoqiang JIAN, WEI TANG, CHI-CHOU LIN, PAUL MA, YIXIONG YANG, MEI CHANG, WENYI LIU
  • Patent number: 10407771
    Abstract: Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: September 10, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Anqing Cui, Faruk Gungor, Dien-Yeh Wu, Vikas Jangra, Muhammad M. Rasheed, Wei V. Tang, Yixiong Yang, Xiaoxiong Yuan, Kyoung-Ho Bu, Srinivas Gandikota, Yu Chang, William W. Kuang
  • Publication number: 20190057863
    Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.
    Type: Application
    Filed: August 17, 2018
    Publication date: February 21, 2019
    Inventors: YIXIONG YANG, PAUL F. MA, WEI V. TANG, WENYU ZHANG, SHIH CHUNG CHEN, CHEN HAN LIN, CHI-CHOU LIN, YI XU, YU LEI, NAOMI YOSHIDA, LIN DONG, SIDDARTH KRISHNAN
  • Patent number: 10199230
    Abstract: Methods for selectively depositing a metal silicide layer are provided herein.
    Type: Grant
    Filed: July 2, 2015
    Date of Patent: February 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Seshadri Ganguli, Yixiong Yang, Bhushan N. Zope, Xinyu Fu, Avgerinos V. Gelatos, Guoqiang Jian, Bo Zheng