Abstract: The present invention provides particle etching or depositing evolutionary simulation method and device. The method comprises: step 1. obtaining an initial profile; step 2. sampling a series of areas for the profile, and performing an evolution process on each of the series of area by using a micro etching or depositing method; step 3. obtaining macro profile evolution parameters based on a micro evolutionary computation result; step 4. performing macro profile evolutionary computation, comprising: performing profile evolutionary computation by using a macro profile evolution method based on the macro evolution parameters; and step 5, judging whether a termination condition is met, if yes, terminating evolution, and if not, repeating the steps 2-4.

Abstract: The present disclosure provides a human organ movement monitoring method for monitoring human organ movement in a surgical process in real time and a surgical navigation system.

Abstract: The present invention provides particle etching or depositing evolutionary simulation method and device. The method comprises: step 1. obtaining an initial profile; step 2. sampling a series of areas for the profile, and performing an evolution process on each of the series of area by using a micro etching or depositing method; step 3. obtaining macro profile evolution parameters based on a micro evolutionary computation result; step 4. performing macro profile evolutionary computation, comprising: performing profile evolutionary computation by using a macro profile evolution method based on the macro evolution parameters; and step 5, judging whether a termination condition is met, if yes, terminating evolution, and if not, repeating the steps 2-4.

Abstract: The present disclosure provides a human organ movement monitoring method for monitoring human organ movement in a surgical process in real time and a surgical navigation system.

Abstract: The present disclosure relates to a method for modeling an etching yield in the evolution simulation of a plasma etched surface, and belongs to the technical field of process simulation of etching surfaces in a micro-electronic processing technology. The method includes the following steps: performing parameterization representation on an etching yield model of various ions; obtaining optimal parameters in the etching yield model by adopting an optimization algorithm; in an optimization process, selecting some specific positions on the surface of a groove, and by comparing simulated etching rates at different time points in an evolution process with an actual etching rate, calculating the goodness (fitness value) of each group of model parameters as a basis of selecting the optimization algorithm and generating a next model parameter set; substituting the obtained model parameters into a model parameterization formula so as to obtain the etching yield model.