Abstract: The present invention provides a graph-based prostate diagnosis network (GPD-Net) and a method for using the same to predict a prostate health status of a patient from a 3D magnetic resonance imaging (MRI) scan containing a plurality of 2D MRI slices. The GPD-Net only demands patient-level annotations of MRI scan for training by formulating the diagnosis task of 3D prostate MRI scan in a multi-instance learning (MIL) strategy, and regarding each 2D MRI slice in the 3D prostate MRI scan as an instance. The GPD-Net includes a plurality of importance-guided graph convolutional layers to explore the diagnostic information with the importance-based topology. The present invention provides accurate prediction of prostate diseases and achieve more reliable diagnosis from MRI scans, therefore can effectively alleviate the workload of clinician in viewing the slices of MRI scan.

Abstract: The present application belongs to the technical field of bridge engineering, and particularly relates to a structure for relieving cracking of a steel bridge deck. The structure for relieving cracking of a steel bridge deck comprises a steel bridge deck and a plurality of U-ribs welded and fixed to a bottom of the steel bridge deck, and further inventions an iron-based shape memory alloy (Fe-SMA) fixing unit, a filling unit, a structural layer, and a test wire. A Fe-SMA having a restoration capability in the case of heating is used and formed into a honeycomb structure to greatly reduce an amplitude of fatigue stress and an influence of fatigue cracking of a welding part on the bridge deck.

Abstract: The present invention relates to the technical field of bridges, and specifically discloses a bridge sling based on electrochemical detection on steel wire corrosion. By means of winding a steel wire bundle with a wrapping tape, and coating the wrapping tape with a shielding coating, the steel wire bundle and the shielding coating are electrically connected with positive and negative electrodes of a voltage test assembly respectively, so that simple and accurate detection on corrosion in the sling during service is realized, and the safety of the sling during the service is ensured.

Abstract: The present invention provides a high-pressure bearable scale type bridge rubber bearing, comprising spring rubber vibration reduction pad assemblies, a flexible steel plate assembly and a rubber bearing body. The rubber bearing body comprises an outer rubber portion and an inner rubber portion; the outer rubber portion is wrapped around the outside of the spring rubber vibration reduction pad assemblies and the flexible steel plate assembly; the spring rubber vibration reduction pad assemblies are arranged on the upper side and the lower side of the inner rubber portion; and the flexible steel plate assembly is fixedly mounted between the spring rubber vibration reduction pad assemblies. The rubber bearing of the present invention has a relatively large elastic deformation after being loaded and can effectively conduct vibration reduction and earthquake resistance during use.

Abstract: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

Abstract: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

Abstract: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

Abstract: In one aspect, a transistor comprises a metal emitter, a first semiconductor barrier, a metal base, a second semiconductor barrier, and a metal collector. The first semiconductor barrier separates the metal emitter and the metal base and has an average thickness based on a first mean free path of a charge carrier in the first semiconductor barrier emitted from the metal emitter. The second semiconductor barrier separates the metal base from the metal collector and has an average thickness based on a second mean free path of the charge carrier in the second semiconductor barrier injected from the metal base. The metal base comprises two or more metal layers and has an average thickness based on a multi-layer mean free path of the charge carrier.

Abstract: In one aspect, a transistor comprises a metal emitter, a first semiconductor barrier, a metal base, a second semiconductor barrier, and a metal collector. The first semiconductor barrier separates the metal emitter and the metal base and has an average thickness based on a first mean free path of a charge carrier in the first semiconductor barrier emitted from the metal emitter. The second semiconductor barrier separates the metal base from the metal collector and has an average thickness based on a second mean free path of the charge carrier in the second semiconductor barrier injected from the metal base. The metal base comprises two or more metal layers and has an average thickness based on a multi-layer mean free path of the charge carrier.

Abstract: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

Abstract: A method for forming a conducting multi-polymer nanostructure. The method includes forming a first conducting polymer nanostructure on a first electrode of a template, forming a second conducting polymer nanostructure on a second electrode of the template, and transferring the first and second conducting polymer nanostructures onto a substrate. The first conducting polymer is different from the second conducting polymer.

Abstract: A method for forming a conducting multi-polymer nanostructure. The method includes forming a first conducting polymer nanostructure on a first electrode of a template, forming a second conducting polymer nanostructure on a second electrode of the template, and transferring the first and second conducting polymer nanostructures onto a substrate. The first conducting polymer is different from the second conducting polymer.