Abstract: The subject invention pertains methods for the ectopic expression of a transmembrane protein lacking plasma membrane expression in a heterologous cell line. In embodiments, transmembrane proteins Fyn-TMC1 and/or Fyn-TMC2 are fused to a membrane-anchoring motif, a Fyn lipidation tag, which provides a signal for myristoylation and palmitoylation, allowing further research on these proteins, including but not limited to their function, structure, and drug screening.

Abstract: The present invention relates to a targeted perception-oriented twin substructure interaction method and system, and application. The method includes: acquiring multivariate inspection and monitoring data and finite element influence line data of a main structure; solving, on the basis of the inspection and monitoring data and the finite element influence line data of a non-focus region, boundary conditions of a focus region; establishing, for the focus region, a refined twin substructure finite element model, and correcting material properties of the refined twin substructure finite element model on the basis of the inspection and monitoring data and the finite element influence line data of the focus region; and calculating a correction force on the basis of the boundary conditions of the focus region and the material properties, and using the correction force as an equivalent external load to act on nodes of a global finite element model.

Abstract: Disulfide-crosslinked non-isocyanate polythiourethane networks, methods of making the disulfide crosslinked non-isocyanate polythiourethane networks, and methods of reprocessing the disulfide crosslinked non-isocyanate polythiourethane networks are provided. The polymer backbone chains of the non-isocyanate polythiourethane networks include two or more thionourethane groups and inter-chain disulfide crosslinks and are branched at thionourethane linkages. The reprocessable disulfide crosslinked non-isocyanate polythiourethanes can be formed from renewable, biobased starting materials.

Abstract: The present application belongs to the technical field of bridge engineering, and particularly relates to a structure for relieving cracking of a steel bridge deck. The structure for relieving cracking of a steel bridge deck comprises a steel bridge deck and a plurality of U-ribs welded and fixed to a bottom of the steel bridge deck, and further inventions an iron-based shape memory alloy (Fe-SMA) fixing unit, a filling unit, a structural layer, and a test wire. A Fe-SMA having a restoration capability in the case of heating is used and formed into a honeycomb structure to greatly reduce an amplitude of fatigue stress and an influence of fatigue cracking of a welding part on the bridge deck.

Abstract: The present invention provides a high-pressure bearable scale type bridge rubber bearing, comprising spring rubber vibration reduction pad assemblies, a flexible steel plate assembly and a rubber bearing body. The rubber bearing body comprises an outer rubber portion and an inner rubber portion; the outer rubber portion is wrapped around the outside of the spring rubber vibration reduction pad assemblies and the flexible steel plate assembly; the spring rubber vibration reduction pad assemblies are arranged on the upper side and the lower side of the inner rubber portion; and the flexible steel plate assembly is fixedly mounted between the spring rubber vibration reduction pad assemblies. The rubber bearing of the present invention has a relatively large elastic deformation after being loaded and can effectively conduct vibration reduction and earthquake resistance during use.

Abstract: The present invention relates to the technical field of bridges, and specifically discloses a bridge sling based on electrochemical detection on steel wire corrosion. By means of winding a steel wire bundle with a wrapping tape, and coating the wrapping tape with a shielding coating, the steel wire bundle and the shielding coating are electrically connected with positive and negative electrodes of a voltage test assembly respectively, so that simple and accurate detection on corrosion in the sling during service is realized, and the safety of the sling during the service is ensured.

Abstract: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

Abstract: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

Abstract: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

Abstract: In one aspect, a transistor comprises a metal emitter, a first semiconductor barrier, a metal base, a second semiconductor barrier, and a metal collector. The first semiconductor barrier separates the metal emitter and the metal base and has an average thickness based on a first mean free path of a charge carrier in the first semiconductor barrier emitted from the metal emitter. The second semiconductor barrier separates the metal base from the metal collector and has an average thickness based on a second mean free path of the charge carrier in the second semiconductor barrier injected from the metal base. The metal base comprises two or more metal layers and has an average thickness based on a multi-layer mean free path of the charge carrier.

Abstract: In one aspect, a transistor comprises a metal emitter, a first semiconductor barrier, a metal base, a second semiconductor barrier, and a metal collector. The first semiconductor barrier separates the metal emitter and the metal base and has an average thickness based on a first mean free path of a charge carrier in the first semiconductor barrier emitted from the metal emitter. The second semiconductor barrier separates the metal base from the metal collector and has an average thickness based on a second mean free path of the charge carrier in the second semiconductor barrier injected from the metal base. The metal base comprises two or more metal layers and has an average thickness based on a multi-layer mean free path of the charge carrier.

Abstract: In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer.

Abstract: A method for forming a conducting multi-polymer nanostructure. The method includes forming a first conducting polymer nanostructure on a first electrode of a template, forming a second conducting polymer nanostructure on a second electrode of the template, and transferring the first and second conducting polymer nanostructures onto a substrate. The first conducting polymer is different from the second conducting polymer.

Abstract: A method for forming a conducting multi-polymer nanostructure. The method includes forming a first conducting polymer nanostructure on a first electrode of a template, forming a second conducting polymer nanostructure on a second electrode of the template, and transferring the first and second conducting polymer nanostructures onto a substrate. The first conducting polymer is different from the second conducting polymer.