Patents by Inventor Yiying Wu

Yiying Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190378426
    Abstract: Techniques for generating customized learning paths are provided. In one technique, consumption data that indicates consumption of multiple learning resources by multiple users is recorded. Based on the consumption data, multiple learning resource tuples are generated, each learning resource tuple indicating that one learning resource that was consumed by a user prior to another learning resource that was consumed by the user. Multiple aggregations are performed, where each aggregation involves aggregating different sets of learning resource tuples, where each set of learning resource tuples comprises the same two learning resources in the same order. Based on a subset of the aggregations, a customized learning path that comprises a set of learning resources is generated for a particular user. The customized learning path is presented to the particular user.
    Type: Application
    Filed: June 6, 2018
    Publication date: December 12, 2019
    Inventors: Pan Wu, Daniel Patrick Tweed-Kent, Sally Limb, Marshall David Miller, Yiying Cheng
  • Patent number: 9881999
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: June 19, 2009
    Date of Patent: January 30, 2018
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20160006089
    Abstract: Potassium-oxygen (K—O2) batteries based on potassium superoxide (KO2) are provided. The K—O2 batteries can exhibit high specific energy a low discharge/charge potential gap (e.g., a discharge/charge potential gap of less than 50 mV at a current density of 0.16 mA/cm2) without the use of any catalysts. The discharge product of the K—O2 batteries is K—O2, which is both kinetically stable and thermodynamically stable. As a consequence of the stability of the discharge product, the K—O2 batteries can exhibit improved operational stability relative to other metal-air batteries.
    Type: Application
    Filed: January 23, 2014
    Publication date: January 7, 2016
    Inventors: Yiying WU, Xiaodi REN
  • Patent number: 8093628
    Abstract: Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches.
    Type: Grant
    Filed: February 7, 2008
    Date of Patent: January 10, 2012
    Assignee: The Regents of the University of California
    Inventors: Peidong Yang, Rongrui He, Joshua Goldberger, Rong Fan, Yiying Wu, Deyu Li, Arun Majumdar
  • Publication number: 20110168968
    Abstract: Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches.
    Type: Application
    Filed: February 7, 2008
    Publication date: July 14, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Peidong Yang, Rongrui He, Joshua Goldberger, Rong Fan, Yiying Wu, Deyu Li, Arun Majumdar
  • Patent number: 7834264
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: November 16, 2010
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20100003516
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: June 19, 2009
    Publication date: January 7, 2010
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Patent number: 7569847
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: January 20, 2005
    Date of Patent: August 4, 2009
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Patent number: 7569941
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: August 4, 2009
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20080092938
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: December 22, 2006
    Publication date: April 24, 2008
    Inventors: Arun Majumdar, Ali Shakouri, Timothy Sands, Peidong Yang, Samuel Mao, Richard Russo, Henning Feick, Eicke Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Patent number: 7355216
    Abstract: Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: April 8, 2008
    Assignee: The Regents of the University of California
    Inventors: Peidong Yang, Rongrui He, Joshua Goldberger, Rong Fan, Yiying Wu, Deyu Li, Arun Majumdar
  • Publication number: 20070164270
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: December 22, 2006
    Publication date: July 19, 2007
    Inventors: Arun Majumdar, Ali Shakouri, Timothy Sands, Peidong Yang, Samuel Mao, Richard Russo, Henning Feick, Eicke Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Patent number: 6996147
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: February 7, 2006
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20050161662
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: January 20, 2005
    Publication date: July 28, 2005
    Inventors: Arun Majumdar, Ali Shakouri, Timothy Sands, Peidong Yang, Samuel Mao, Richard Russo, Henning Feick, Eicke Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Patent number: 6882051
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: April 19, 2005
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20040262636
    Abstract: Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches.
    Type: Application
    Filed: April 8, 2004
    Publication date: December 30, 2004
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Peidong Yang, Rongrui He, Joshua Goldberger, Rong Fan, Yiying Wu, Deyu Li, Arun Majumdar
  • Publication number: 20020175408
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: March 29, 2002
    Publication date: November 28, 2002
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20020172820
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: March 29, 2002
    Publication date: November 21, 2002
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan