Abstract: A controlling method for a wireless communication device is provided. The controlling method for the wireless communication device includes: attaching a first Universal Subscriber Identity Module (USIM) to a Long-Term Evolution (LTE) network; determining whether a second USIM is camped on the LTE network; detecting whether a paging collision is happened, if the second USIM is camped on the LTE network; generating a requested International Mobile Subscriber Identity (IMSI) offset for the second USIM, if the paging collision is happened, wherein the requested IMSI offset is 1 or min(T, nB)?1, T is a default paging period and nB is a number of paging occurrences within the default paging period; transmitting an attach request with the requested IMSI offset to the LTE network for the second USIM; receiving a negotiated IMSI offset from the LTE network; and attaching the second USIM to the LTE network with the negotiated IMSI offset.

Abstract: A computer system acquires a video bitstream. The video bitstream includes data associated with multiple encoded pictures. Each encoded picture includes one or more coding units (CUs). While decoding a current CU of a picture in the video bitstream, the current CU having a plurality of reference subblocks located in one or more reference pictures, in accordance with a determination that the plurality of reference subblocks satisfy a first set of predefined conditions for enabling a subblock-based temporal motion vector prediction (SbTMVP) mode, the computer system retrieves, from the video bitstream, syntax elements associated with the SbTMVP mode. The computer system then decodes the current CU using the retrieved syntax elements associated with the SbTMVP mode.

Abstract: Aspects of the present disclosure provide an automated labeling system. For example, the automated labeling system can include an automated labeling module (ALM) configured to receive wireless signals and ground truth of learning object and label the wireless signals with the ground truth when receiving the ground truth to generate labeled training data. The automated labeling system can also include a training database coupled to the ALM. The training database can be configured to store the labeled training data.

Abstract: A memory device includes a plurality of memory cells disposed over a substrate and formed as an array that has a plurality of rows and a plurality of columns. Each of the plurality of memory cells includes a plurality of transistors. A first subset of the plurality of memory cells, that are disposed in first neighboring ones of the plurality of rows, are physically coupled to a corresponding one of a plurality of second interconnect structures that carries a supply voltage through a corresponding one of a plurality of first interconnect structures. The plurality of first interconnect structures extend along a first lateral direction in parallel with a lengthwise direction of a channel of each of the transistors of the memory cells, and the plurality of second interconnect structures, disposed above the plurality of first interconnect structures, extend along a second lateral direction perpendicular to the first lateral direction.

Abstract: An overhead hoist transfer apparatus includes a rail assembly including a straight rail having an empty section, and a curved rail having a curved empty section; an engine including a first LSD having first and second wheels at two sides respectively; and a second LSD having third and fourth wheels at two sides respectively; a moving carriage driven by the engine and suspended from the rail assembly; first and second guide wheels disposed on the first LSD; third and fourth guide wheels disposed on the second LSD; and two guide boards disposed above a joining point of the straight rail and the curved rail. An elevation of the guide boards is equal to that of the guide wheels. The guide board includes a straight edge and a curved edge.

Abstract: An ionic compound, an absorbent and an absorption device are provided. The ionic compound has a structure represented by Formula (I): ABn, ??Formula (I) wherein A is B is R1, R2, R3, R4, R5, and R6 are independently H, C1-6 alkyl group; and n is 1 or 2.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A powered industrial truck includes a lateral movement assembly including four sliding members and four pivotal members both on a wheeled carriage, four links having a first end pivotably secured to the sliding member and a second end pivotably secured to either end of the pivotal member, a motor shaft having two ends pivotably secured to the pivotal members respectively, a first electric motor on one frame member, and four mounts attached to the sliding members respectively; two lift assemblies including a second electric motor, a shaft having two ends rotatably secured to the sliding members respectively, two gear trains at the ends of the shaft respectively, a first gear connected to the second electric motor, a second gear on the shaft, and a first roller chain on the first and second gears; two electric attachments on the platform and being laterally moveable, each attachment. The mount has rollers.

Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: A protecting method for preventing solder crack failure in an electronic product is provided. Firstly, a step (a) is performed to confirm that a crack incidence rate of a metallic solder material in a printed circuit board is high. In a step (b), a protecting mechanism of controlling the electronic product to enter an idle mode and leave the idle mode is activated. Consequently, an operating temperature of the electronic product decreases at a first average drop rate.

Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate; semiconductor layers over the substrate, wherein the semiconductor layers are separate from each other and are stacked up along a direction generally perpendicular to a top surface of the substrate; a dielectric feature over and separate from the semiconductor layers; and a gate structure wrapping around each of the semiconductor layers, the gate structure having a gate dielectric layer and a gate electrode layer, wherein the gate dielectric layer interposes between the gate electrode layer and the dielectric feature and the dielectric feature is disposed over at least a part of the gate electrode layer.

Abstract: Disclosed herein are related to a memory device. In one aspect, a memory device includes a set of memory cells. In one aspect, the memory device includes a first bit line extending along a direction. The first bit line may be coupled to a subset of the set of memory cells disposed along the direction. In one aspect, the memory device includes a second bit line extending along the direction. In one aspect, the memory device includes a switch coupled between the first bit line and the second bit line.

Abstract: A method of wireless signal transmission management includes transmitting a plurality of data packets to tethering equipment from user equipment to tethering equipment, determining a size of each of the plurality of data packets by the tethering equipment, designating data packets of the plurality of data packets having a specific range of sizes as control signal packets by the tethering equipment, and prioritizing in transmitting the control signal packets to a cellular network by the tethering equipment.

Abstract: Methods, apparatuses, and non-transitory computer-readable storage mediums are provided for video decoding. In one method, a decoder receives a Sequence Parameter Set (SPS) rice extension flag that indicates whether an extension of rice parameter derivation for binarization of abs_remainder and dec_abs_level is enabled. In a second method, the decoder may receive a Sequence Parameter Set (SPS) rice adaption enabled flag that indicates whether rice parameter derivation for binarization of abs_remainder and dec_abs_level is used.

Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.

Abstract: A method for evaluating a risk of a subject getting a specific disease includes steps of: storing a reference database that contains original parameter sets; selecting target alleles from an SNP profile derived from genome sequencing data of a subject; selecting target parameter sets from among the original parameter sets; calculating, for each of the target parameter sets, a race factor based on a global risk allele frequency and a group-specific risk allele frequency included in the target parameter set; calculating a genetic factor based on statistics, global reference allele frequencies, the race factors for the target parameter sets, and numbers of chromosomes in homologous chromosome pairs included in the target parameter sets; calculating a citation factor based on numbers of citation times included in the target parameter sets; and calculating a risk score based on the genetic factor and the citation factor.