Abstract: According to various embodiments, a tunable optical device comprises a tunable optical metasurface on a substrate with an integrated driver circuit. In some embodiments, the tunable optical device includes a photon shield layer to prevent optical radiation from disrupting operation of the driver circuit. In some embodiments, the tunable optical device includes a diagnostic circuit to detect and disable defective optical structures of the metasurface. In some embodiments, the tunable optical device includes an integrated heater circuit that maintains a liquid crystal of the metasurface above a minimum operating temperature. In some embodiments, the tunable optical device includes an integrated lidar sequencing controller, a steering pattern subcircuit, and a photodetector circuit.

Abstract: Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.

Abstract: According to various embodiments, a tunable optical device comprises a tunable optical metasurface on a substrate with an integrated driver circuit. In some embodiments, the tunable optical device includes a photon shield layer to prevent optical radiation from disrupting operation of the driver circuit. In some embodiments, the tunable optical device includes a diagnostic circuit to detect and disable defective optical structures of the metasurface. In some embodiments, the tunable optical device includes an integrated heater circuit that maintains a liquid crystal of the metasurface above a minimum operating temperature. In some embodiments, the tunable optical device includes an integrated lidar sequencing controller, a steering pattern subcircuit, and a photodetector circuit.

Abstract: According to various embodiments, a tunable optical device comprises a tunable optical metasurface on a substrate with an integrated driver circuit. In some embodiments, the tunable optical device includes a photon shield layer to prevent optical radiation from disrupting operation of the driver circuit. In some embodiments, the tunable optical device includes a diagnostic circuit to detect and disable defective optical structures of the metasurface. In some embodiments, the tunable optical device includes an integrated heater circuit that maintains a liquid crystal of the metasurface above a minimum operating temperature. In some embodiments, the tunable optical device includes an integrated lidar sequencing controller, a steering pattern subcircuit, and a photodetector circuit.

Abstract: Described are microelectronic device comprising a dielectric layer formed on a substrate, a feature 206 comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming an microelectronic device comprising the two metal liner film on the barrier layer.

Abstract: Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface.

Abstract: Systems for removing post etch polymer residue from etched surface includes a first proximity head to introduce a first cleaning chemistry as a first meniscus to a portion of the surface of the substrate so as to cover a length that extends to at least a diameter of the substrate and a first width that is less than the diameter of the substrate. A second proximity head is configured to introduce a second cleaning chemistry as a second meniscus to the portion so as to cover the length that extends to the diameter and a second width that is less than the diameter of the substrate. A substrate supporting device equipped with a motor coupled to a computing system is used to move the substrate supporting device under the first proximity head at a first linear speed and under the second proximity head at a second linear speed.

Abstract: A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure.

Abstract: A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure.