Abstract: Embodiments of the present invention relate to the field of circuit technology, and disclose a method for correcting a SOC of a battery pack, a battery management system, and a vehicle. The method for correcting an SOC of a battery includes: determining, when a charging process of the battery pack starts, whether an initial SOC value of the battery pack is less than or equal to a preset electricity quantity threshold; when the initial SOC value of the battery pack is less than or equal to the preset electricity quantity threshold, recording state information of the battery pack during the charging process, and generating a differential capacity curve of the battery pack according to the state information; correcting a current SOC value of the battery pack according to the differential capacity curve and a voltage-SOC reference curve of a non-decay zone of the battery pack.

Abstract: Disclosed are a thin film transistor structure, a display panel and a display device. The thin film transistor structure includes a base, a source electrode, a drain electrode configured to connect to a pixel electrode and a grid electrode. The source electrode, the drain electrode and the grid electrode are provided on the base. and a channel is formed between the source electrode and the drain electrode. The thin film transistor structure further includes an insulating layer and a slow-release electrode. The insulating layer is provided on a side of the source electrode and the drain electrode, and filled in the channel. The slow-release electrode is provided in the insulating layer. At least a part of the slow-release electrode is provided inside the channel.

Abstract: A battery cell includes a housing, an electrode assembly accommodated in the housing, and an end cover configured to buckle to an opening of the housing. The end cover comprises a first body part, a first end wall, and a first peripheral wall. The first body part is configured to be connected to the housing. The first end wall is farther away from the electrode assembly than the first body part. The first peripheral wall is disposed around an edge of the first end wall and connected to the first body part, and the first peripheral wall and the first end wall jointly form a first accommodation space used to accommodate at least a part of a tab of the electrode assembly. The first peripheral wall comprises a first arc wall extending from the first end wall to the first body part along a first arc trajectory.

Abstract: A seismic quantitative prediction method for shale total organic carbon (TOC) based on sensitive parameter volumes is as follows. A target stratum for a TOC content to be measured is determined, logging curves with high correlations with TOC contents are analyzed, the logging curves are found as sensitive parameters; sample data are constructed using the sensitive parameters; a radial basis function (RBF) neural network is trained with the sample data as an input and the TOC content at a depth corresponding to the sample data as an output to obtain a RBF neural network prediction model; sensitive parameter volumes are obtained by using the sensitive parameters and post stack three-dimension seismic data to invert; prediction samples are constructed using the sensitive parameter volumes; the predicted samples are input to the RBF neural network prediction model to calculate corresponding TOC values, thereby the TOC content of the target stratum is predicted.

Abstract: Disclosed are a thin film transistor structure, a display panel and a display device. The thin film transistor structure includes a base, a source electrode, a drain electrode configured to connect to a pixel electrode and a grid electrode. The source electrode, the drain electrode and the grid electrode are provided on the base. and a channel is formed between the source electrode and the drain electrode. The thin film transistor structure further includes an insulating layer and a slow-release electrode. The insulating layer is provided on a side of the source electrode and the drain electrode, and filled in the channel. The slow-release electrode is provided in the insulating layer. At least a part of the slow-release electrode is provided inside the channel.