Abstract: A semiconductor device includes a first gate structure extending along a first lateral direction. The semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. The first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. The semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. The second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.

Abstract: An approach for managing data set access based on data set relevance. The approach monitors data set access activities associated with a user. The approach detects access of a first data set by the user. The approach determines a group of data sets associated with the first data set based on a data set mapping associated with the user. The approach recalls one or more data sets of the group of data sets from a slower storage device to a faster storage device.

Abstract: A wavelength converter includes a supporting substrate and a ferroelectric substrate, the ferroelectric substrate includes at least one waveguide facing the supporting substrate and at least one wavelength-filtering pattern positioned between the waveguide and the supporting substrate, the waveguide includes a plurality of inverted domains and non-inverted domains configured to convert an infrared light into a green light, and the infrared light emitted from the semiconductor laser enters the waveguide of the wavelength converter. For example, the wavelength-filtering pattern includes a Bragg grating.

Abstract: A wavelength converter includes a supporting substrate and a ferroelectric substrate, the ferroelectric substrate includes at least one waveguide facing the supporting substrate and at least one wavelength-filtering pattern positioned between the waveguide and the supporting substrate, the waveguide includes a plurality of inverted domains and non-inverted domains configured to convert an infrared light into a green light, and the infrared light emitted from the semiconductor laser enters the waveguide of the wavelength converter. For example, the wavelength-filtering pattern includes a Bragg grating.

Abstract: A wavelength converter structure comprises a supporting substrate, a ferroelectric substrate having at least one ridge waveguide including a plurality of periodic poled regions positioned on a first side of the ferroelectric substrate, and at least one controlling pattern positioned on a second side of the ferroelectric substrate. The ridge waveguide is joined to the supporting substrate via an adhesive, and the second side is opposite to the first side.