Patents by Inventor YJ Wang

YJ Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7183171
    Abstract: A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the at least one dielectric layer. The second conductive layer has a second area which is less than the first area of the at least one dielectric layer. A method of fabricating a capacitor structure is also disclosed.
    Type: Grant
    Filed: October 17, 2005
    Date of Patent: February 27, 2007
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kun-Ming Huang, YJ Wang, Ying-De Chen, Eugene Chu, Fu-Hsin Chen, Tzu-Yang Wu
  • Publication number: 20060197091
    Abstract: A capacitor structure which has generally pyramidal or stepped profile to prevent or reduce dielectric layer breakdown is disclosed. The capacitor structure includes a first conductive layer, at least one dielectric layer having a first area provided on the first conductive layer and a second conductive layer provided on the at least one dielectric layer. The second conductive layer has a second area which is less than the first area of the at least one dielectric layer. A method of fabricating a capacitor structure is also disclosed.
    Type: Application
    Filed: October 17, 2005
    Publication date: September 7, 2006
    Inventors: Kun-Ming Huang, YJ Wang, Ying-De Chen, Eugene Chu, Fu-Hsin Chen, Tzu-Yang Wu