Abstract: In a silicon substrate a method is described for producing a recess for receiving an element. The method includes masking and etching areas on the substrate on either side of the intended recess, and masking at least one area of less width than the length of the intended recess and which, at least partly, extends over the intended recess to etch out a holding element corresponding to that area for holding an element received in the recess in place. The substrate is of a first doping type, and the masking is produced by doping the substrate with a dopant of a second doping type. The at least one area on the substrate, which, at least partly, extends over the intended recess is doped to a depth corresponding to the desired thickness of the holding element.