Abstract: A chemical vapor deposition apparatus for titanium-nitride application that is useful for preventing contaminants caused by arching between a substantially planar substrate and a substrate supporting apparatus during the deposition cycle. The apparatus includes a chemical vapor deposition chamber having a substrate-supporting heater. An annular housing supported by the heater, and a conductive strap that connectively secures the substrate-supporting heater to the annular housing by using holes instead of conventional slots. The conductive strap is designed as a flexure to flex with process temperature changes to improve electrical connectivity at its terminal connection and to prevent degradation. The annular housing has a top and a bottom surface and a cylindrical wall extending peripherally below the surfaces. The cylindrical wall encircles an isolator ring.